UPD4216165 Search Results

nec A2C

Contextual Info: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|iPD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page

Contextual Info: pPD4216165 1M X 16-Bit Dynamic CM OS RAM NEC NEC Electronics Inc. Product Brief April 1994 Description Pin Configurations The ji/PD4216165 devices are dynam ic CM O S RAMs with an optional hyper-page mode organized as 1,048,576 words by 16 bits. A single-transistor dynam ic storage

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT / iP D 4 2 S 1 6 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S16165, 4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

nec hyper

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT JU P D 4 2 1 6 1 6 5 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD4216165 is a 1 048 576 w o rd s by 16 b its d yn a m ic CMOS RAM w ith o p tio n a l h yp e r page m ode.

Contextual Info: NEC MOS INTEGRATED CIRCUIT M P D 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ¿¿PD4216165 is a 1 048 576 words by 16 bits dynamic CMOS RAM with optional hyper page mode. Hyper page m ode is a kind of the page mode and is useful for the read operation.

65G5

Abstract: NEC 4216165-60
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿PD42S16165, 4216165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

Contextual Info: NEC USER'S MANUAL HOW TO USE DRAM Document No. M10339EJ3V0UMQ0 {3rd édition Date Published July 1996 P NEC Corporation 1994, 1995, 1996 Printed in Japan 1103 R a m b u s is a trad em ark o f R a m b us Inc. T h e in fo rm a tio n in th is d o c u m e n t is s u b je c t to c h a n g e w ith o u t n otice.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The ¿¡PD42S16165L, 4216165L are 1,048,576 w ords by 16 bits CMOS dynam ic RAMs with optional EDO.