2N4416
Abstract: SST4416
Contextual Info: Tem ic 2N4416/4416A/SST4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 SST4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits
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2N4416/2N4416A/SST4416
SST4416
2N4416/A,
2N4416/2N4
S-52424--Rev.
14-Apr-97
2N4416
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Contextual Info: Central Sem icon du ctor Corp. C M P F 4416A SILICON N-CHANNEL JFET DESCRIPTION: The C EN TR AL SEM ICO NDUC TO R 4416A type is an epoxy molded NChannel Silicon Junction Field EffectTran$istor manufactured in an SOT-23 case, designed for VHF amplifier and mixer applications.
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CMPF4416A
OT-23
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lc7218
Abstract: RDSF SK 57 100 SA 2232M DIP24S LA2230 LA2232 LA2232M LC7070 MFP24S
Contextual Info: ; È Î 3 - KNo. 4416A N o . 4416A D2096 X Ns4416 £ 2 b i ' Z X < £ £ < •'. L A 2232, 2232M - r d s ^ I f LA2232, 2232M f i , R D S Îi# fflÎlfflIC T * 5 7 k H z ^ > K - /* * 7 ^ )] /# ilfeARI-SK, D K { | mm, Ò. x ^ - $ Ü H T I E f f lL S I LC7070'>>;
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N4416A
Ns4416
LA2232,
2232M-rds^
2232MÃ
057kHz>
LC7070^
LA2230,
2230MÃ
lc7218
RDSF
SK 57 100 SA
2232M
DIP24S
LA2230
LA2232
LA2232M
LC7070
MFP24S
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Contextual Info: F4 9-97 Small O utline Surface M ount Package Devices N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BVgsS Device Type >GSS VgS(OFF) Limits Conditions Min Max Vos to Min Max @Vds (mA) (mA) (V) Min @Ig Max @VGS (V) (UA) (nA) (V) SMP 4340 SMP4341 SMP 4391
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SMP4341
SMP245
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LA2232
Abstract: 4416A LA2232M LC7070 MFP24S 2232M DIP24S LA2230
Contextual Info: Ordering number : 4416A Monolithic Linear IC LA2232, 2232M RDS Decorder Overview Package Dimensions The LA2232 and LA2232M are RDS demodulator ICs that provide both a 57 kHz bandpass filter as well as ARISK and DK signal recognition functions on chip. Costeffective RDS decoder systems can be constructed by
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EN4416A
LA2232,
2232M
LA2232
LA2232M
2232M
LC7070
4416A
MFP24S
DIP24S
LA2230
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2N5248
Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
Contextual Info: N -Channel Junction Field Effect Transistors GENERAL PURPOSE M A X IM U M R A T IN G S ' dss Im A l TYPE VG S off (V Y fs (mm hos) Ciss Crss NF (pF) (pF) (dB) max max max CASE NO. Pd (mW) b v gss (V) m in BC264A BC264E! BC264C BC264D TO-92DE TO-92DE TO-92DE
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BC264A
O-92DE
BC264E!
BC264C
BC264D
BF246A
O-92DA
2N5248
2N5557
2N5103
2N5485
2n5556
BF244A
BF245C
2N5104
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geophone
Abstract: 1143J gt 1081 ADC1140 ADC1143 ADC1143J ADC1143K
Contextual Info: Selection Guide Analog-to-Digital Converters High Resolution A/D Converters ADC1130/ADC1131 Page 14-Bit Resolution and Accuracy Fast 12 |a s Conversion Tim e ADC1131J/K Lo w 10ppm/°C M axim um Gain TC U ser Choice of Input Range No M issing Codes V o l. II
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ADC1130/ADC1131
14-Bit
ADC1131J/K)
10ppm/Â
ADC1140
16-Bit
175mW
150mW
ADC1143J)
geophone
1143J
gt 1081
ADC1140
ADC1143
ADC1143J
ADC1143K
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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4416A
Abstract: 2N4416
Contextual Info: _ I N-Channel JFET High Frequency Amplifier _ C Q IO O IC CORPORATION 2N4416/ 4416A / PN4416 FEATURES • • • • • A B S O L U T E MAXIMUM RATINGS T a = 25°C unless otherwise noted Low Noise Low Feedback Capacitance Low Output C a pacitance High Tran scon d uctan ce
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2N4416/
2N4416A
PN4416
2N4416,
2N4416/2N4416A
100MHz
400MHz
4416A
2N4416
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2n4416
Abstract: 2N4416 equivalent SST4416
Contextual Info: Tem ic 2N4416/4416A/SST4416 Siliconix N-Channel JFETs Product Summary P a rt N um ber VGS oH (V) V{BR)GSS M in (V) 2N4416 <6 -3 0 4416A -2 .5 to - 6 SST4416 <6 gfe M in (m S) j ” I dss M in (mA) 4.5 5 -3 5 4.5 5 -3 0 4.5 5 2N4416, For applications information see A N I 04, page 12-21.
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2N4416/2N4416A/SST4416
2N4416
2N4416A
SST4416
2N4416,
2N4416/A,
P-37408--Rev.
2N4416 equivalent
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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pj211
Abstract: J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117
Contextual Info: INT ER F E T CORP 2bE D • 4fl2bflflä 0 0 0 0 2 3 6 T ■ C1 T '- Z Z - Z S ' -r~3s-~?.5 N Channel JFETs _ SMALL OUTLINE N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Electrical Characteristics at TA = 25°C VGSlo»i V Bfl|GSS less Ui lG
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NJ132
NJ132
pj211
J300C
SMP4220
SMP4091
smp4856
BF24
j300b
SMP4117
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Contextual Info: TYPES 2N4416, 4416A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO . D L -S 6 81 0 6 4 9 , J A N U A R Y 1968 FOR VHF AM PLIFIER A ND M IX E R APPLICATIONS High Power G a in . . . 10 dB M in at 400 M Hz Low Noise F igure. . . 4 dB M a x af 400 M Hz
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2N4416,
2N4416A
400-M
7S222
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2N4416
Abstract: 2N4416A ITE4416
Contextual Info: E SOLI» STATE □1 2N4416/A, ITE4416 3875081 G E SOLID STATE DE 3 Û 7 5 G Û 1 DOlCHflO 01 E 10980 2 N 44 16 /A , ITE4416 D K ifife n tL N-Channel JFET High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Low Noise (Ta = 25°C unless otherwise noted
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2N4416/A,
ITE4416
ITE4416)
2N4416,
2N4416A.
2N4416/2N4416A.
-t-150Â
Vos-15V,
2N4416
2N4416A
ITE4416
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U1994
Abstract: mpf102 equivalent 2N4416 2N4416A 2N5668-70 MPF108 2N3966 2N4416-16A 2N5555 MPF102
Contextual Info: designed fo r B . S H ic o n ix Perform ance Curves N H See Section 5 B EN EFITS • Low Noise NF = 3 dB Typical at 400 M Hz • Wide Band High gfs/C jss Ratio 4416A • VHF Amplifiers ■ M ixers 2N4416 n-channel JFETs T O -7 2 See S e c tio n 7 «ABSOLUTE M A X IM U M R A TIN G S 25°C
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2N4416.
2N4416A.
Vqs-16
U1994
mpf102 equivalent
2N4416
2N4416A
2N5668-70
MPF108
2N3966
2N4416-16A
2N5555
MPF102
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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J-23548
K24123
i39-40i
NZ3766
53-C-03
siliconix fet
Transistor E112 FET N-Channel
JFET TRANSISTOR REPLACEMENT GUIDE j201
E112 jfet
jfet bfw10 terminals
JFET BFW10 SPECIFICATIONS
4856a mosfet
Transistor E112 FET
FETs in Balanced Mixers Ed Oxner
equivalent components FET BFW10
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1n52408
Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which
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301PT1115
302PT1115
303PT1115
311PT1110
312PTI110
319PTI110
327PTI110
351PT1115
353PT1115
1n52408
1N52428 zener
SFC2311
78M12HM
21L02A
54175
IRS 9530 transistor
10116dc
BB105G
962PC
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2N3303
Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any
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Chiana56
2N3303
T1S57
RJh 3347
2N3680
LA 4301
transistor ITT 2907
2N3792
2N3574
BF173
transistor bf 175
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LA2232M
Abstract: 2232M DIP24S LA2230 LA2232 LC7070 MFP24S 4416A "RDS Demodulator" RDS demodulation decoder
Contextual Info: Ordering number : 4416A Monolithic Linear IC LA2232, 2232M RDS Decorder Overview Package Dimensions The LA2232 and LA2232M are RDS demodulator ICs that provide both a 57 kHz bandpass filter as well as ARISK and DK signal recognition functions on chip. Costeffective RDS decoder systems can be constructed by
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EN4416A
LA2232,
2232M
LA2232
LA2232M
2232M
LC7070
DIP24S
LA2230
MFP24S
4416A
"RDS Demodulator"
RDS demodulation decoder
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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74L47
Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
Contextual Info: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS
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CC-401
10072-41-US
54S/74S
74L47
a1208 transistor
74L03
sn76131
MC526L
eh12a
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
tg321
PJ 909
inverter LS600
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