BF24 Search Results

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

bf241

Abstract: BF240 BF241 TO92 bF240 transistor bf241_ BF241 Philips
Contextual Info: BF240 BF241 PH IL IP S I N T E R N A T I O N A L 5bE D • 711DäEb G D 4 2 m 4 MOT ■ P H I N T-J t - HF SILICON PLANAR EPITAXIAL TRANSISTORS // NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in A M /FM receivers. QUICK REFERENCE DATA

BFQ58

Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S

BF240

Abstract: BF240 CEB CEB npn DATE CODE FAIRCHILD
Contextual Info: BF240 BF240 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current

transistor a effet de champ

Abstract: BF247 transistor 139 BF signaux
Contextual Info: BF247 F IE L D E FFEC T T R A N S IS T O R , S IL IC O N , N C H A N N E L TRANSISTOR A E FFE T DE CHAMP, SILICIUM, CANAL N -Amplification Amplification -Chopper Découpeur V DS 25 V max. ' dss 30 . . . 25 0 mA à V QS = 0 in 3 groups e n 3 groupes 2 3 m A /V ty p à V GS = 0

BF245

Abstract: "shortwave receiver" shortwave receiver 10,7mhz drm receiver 7808 C4270 SA612 10 MHz 1st IF IC2 LM386
Contextual Info: DDSR1 10,688 MHz 10,712 MHz Oscillator C38 100n C36 C37 C1 100n 1n Oscillator Input X1 SOCKET +12V 7808 REG 7808 10,7 MHz CerRes ANTENNA SFE107 C15 in gnd out R16 100 E1 Regulator Q1 BF245 R1 47k R15 1k L1 L2 L3 0.33µ C2 150 0.39µ C3 270 0.33µ C4 270

DB244C

Abstract: BD244A
Contextual Info: r r z SG S-TH O M SO N Ä 7 # HD^^OilLliigTISiOliîiœi BD243A/B/C BD244A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS . BD243B, BF243C, BD244B AND DB244C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD243A, BD243B and BD243C are silicon epitaxial-base NPN transistors mounted in Jedec

Contextual Info: BF245A/2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)25m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m¥ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)0.25

BF245B

Contextual Info: BF245A, BF245B JFET VHF/UHF Amplifiers N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Source Voltage VDS ±30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate −Source Voltage VGS 30 Vdc ID 100 mAdc IG f 10 mAdc 350

BF247A

Contextual Info: 1^53^31 002350? 552 • APX BF246A to C BF247A to C M AMER PHILIPS/DISCRETE b?E D _ J V_ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical n-channel planar epitaxial junction field-effect transistors in plastic TO-92 variants, intended for VHF and UHF amplifiers, mixers and general purpose switching.

Bf240

Abstract: transistor d 2333 2108 npn transistor Transistor B 886 NPN C 5344 transistor NPN 3474 str 6707 BF240 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF240 NPN medium frequency transistor Product specification Supersedes data of 1998 Dec 02 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING

Contextual Info: BF245A TO C _ y v _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended fo r applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

Contextual Info: N AflER PHILIPS/DISCRETE b^E D 0057b72 T34 • APX BF240 BF241 b b S B 'I B l Jl HF SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in AM/FM receivers. QUICK REFERENCE DATA Collector-base voltage open emitter

2n5248

Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE

BF247

Abstract: BF246 BF246A BF247A
Contextual Info: b3E BF246A to C BF247A to C tb-53^24 0Q72bQfl ôTT H I S I C 3 napc/ p h il ip s s e h ic o n i - N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS S ym m e trica l n-channel planar e pitaxial ju n ctio n fie ld -e ffe c t transistors in plastic T O -9 2 variants,

F246A

Abstract: bf246a BF247B BF246
Contextual Info: BF246A,B CASE 29-04, STYLE 22 TO-92 TO-226AA T , BF247B CASE 29-04, STYLE 5 TO-92 (TO-226AA) M A X IM U M RATINGS Rating Sym bol Value U nit D rain-S ource Voltage VDS i 25 Vdc D ram -G ate Voltage vdg 25 Vdc G ate-Source Voltage VGS 25 Vdc Id 100 mAdc

BF247

Abstract: BF246 bf246a BF247A TO226AA BF247B BF246C bf246 motorola
Contextual Info: BF246,A,B,C A CASE 29-04, STYLE 22 TO-92 TO-226AA ¿ ^C j‘ BF247,A,B,C CASE 29-04, STYLE 5 TO-92 (TO-226AA) M A X IM U M RATINGS R a tin g Sym bol V a lu e U n it D ra in -S o u rc e Voltage Vd S ±25 Vdc D ra m -G a te V oltage vdg 25 V dc G a te -S o u rce Voltage

Contextual Info: BF240 M A X IM U M RATINGS R a tin g Sym bol V a lu e U n it Vdc CASE 29-04, STYLE 21 TO-92 TO-226AA C o lle c to r-E m itte r V o lta g e VCEO 40 C o lle c to r-B a s e V o lta g e VCBO 40 Vdc 4 0 Vdc 'C 25 m Ade PD 350 mW 2.8 m W /':C E m itte r-B a s e V o lta g e

BF245

Abstract: BF245C BF245C JFET
Contextual Info: BF244A,B ¿¡T CASE 29-04, STYLE 22 TO-92 TO-226AA 1Souf BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) G al« \ J 1 / M A X IM U M RATINGS R a tin g V a lu e Sym bol U n it D ra in -S o u rc e V o lta g e Vd S D ra in -G a te V o lta g e vdg 30 G a te -S o u rc e V o lta g e

BF245

Abstract: transistor BF245 Fet BF245 BF245 TRANSISTOR FET TO-92
Contextual Info: G U M O M te tr, DESCRIPTION BF245 is N-Channel Junction Effect Transistor designed VHF/UHF amplifiers and mixer. CRO BF245 N-CHANNEL JUNCTION FET TO-92 Field for GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage Gate-Source Voltage

Bf240

Contextual Info: BF240 BF240 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current

Contextual Info: -437 MAX.- -15.0- -15.0- ARC LENGTH @ END OF LIFE - 414 MIN.- 2.40J 0O.6O-1 JKL LAMP PART NUMBER COLOR BF24438-33B WHITE 10,000°k x = .283 y = .299 STARTING OPERATING OPERATING ‘ RATED BRIGHTNESS CIRCUIT VOLTAGE LAMP VOLTAGE LAMP CURRENT

BF241C

Abstract: BF241 BF240
Contextual Info: BF240 BF241 HF SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in a plastic package, recom m ended fo r AM m ixers and IF a m p lifiers n A M /F M receivers. Q U IC K R EFE R E N C E D A T A Collector-base voltage open e m itte r v CB0 max. 40 V C o lle c to r-e m itte r voltage (open base)

bf244a

Contextual Info: BF244A / BF244B / BF244C BF244A BF244B BF244C S G TO-92 D N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings*