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    44T TRANSISTOR Search Results

    44T TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    44T TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors kb53R31 003213^ 44T IHAPX Product specification NPN 1 GHz wideband transistor £ BFW92 N AUER PHILIPS/DISCRETE b'lE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power


    OCR Scan     		PDF kb53R31 BFW92 BFW92/02 MEA393

    im317

    Abstract: Parallel Application LM317 Battery charger lm317 LM317MP Arnold A-254168-2 core with 60 turns LM317T LM317AMP LM317T TO-202 LM317AK LM317AK-STEEL
    Text: SflE ]> • bSG112M D07bEfiT 44T » N S C E NATL SEMICOND LINEAR LM117A/LM117/LM317A/LM317 3-Terminal Adjustable Regulator General Description The LM117 series of adjustable 3-terminal positive voltage regulators is capable of supplying in excess of 1.5A over a


    OCR Scan     		PDF bSG112M D07bEfiT LM117A/LM117/LM317A/LM317 LM117A/LM117/LM317A/LM317 LM117 TL/H/9063-30 LM117AK LM117AK/883, im317 Parallel Application LM317 Battery charger lm317 LM317MP Arnold A-254168-2 core with 60 turns LM317T LM317AMP LM317T TO-202 LM317AK LM317AK-STEEL

    44t transistor

    Abstract: Marking code 44t transistor 44t Self-Oscillating mixer marking 44t Bipolar Junction Transistor marking code .gj marking code gj marking GG BF569
    Text: bBE D • bbSBSBM GG?426b 44T ■ SIC3 BF569 J NAPC/PHILIPS SEMICOND FOR D E T A IL E D IN F O R M A T IO N SEE TH E LATEST ISSUE OF H AN D BO O K SClOa OR D A TA S H E E T SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P tran sisto r in a m icro m in ia tu re plastic envelope, intended fo r a pplications in th ic k and th in -film


    OCR Scan     		PDF BF569 OT-23 44t transistor Marking code 44t transistor 44t Self-Oscillating mixer marking 44t Bipolar Junction Transistor marking code .gj marking code gj marking GG BF569

    D67DE5

    Abstract: Q6015at
    Text: LO R A S I N D U S T R I E S INC MEE D • 55ÛG44Ô QDG003D 7 « L O R A TRANSISTOR PACKAGE TYPE PART No. DESCRIPTION H fe Pt 25°C Watts iç Amps VEBO Volts VCEO Volts VCBO Volts !ç H fe Amps - 250 250 300 300 5.0 5.0 5.0 5.0 125.00 50.00 S0.00 50.00


    OCR Scan     		PDF QDG003D Q2006LT Q4006LT Q6006LT Q4006AT Q6006AT T0220AB/I T0220AByr GIT03 D67DE5 Q6015at

    Q4015T

    Abstract: NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT
    Text: TRANSISTOR PART No TYPE Pt @25°C Watts VCEO Volts VEBO Volts VCBO Volts Hfe |ç a lc Amps Volts Hfe PACKAGE DESCRIPTION T 0 18 T 0 18 T 0 18 T 0 18 SGN SGN SGN SGN 0.20 0.50 0.50 0.50 0.05 0.80 0.80 0.80 15 30 30 40 3.0 5.0 5.0 6.0 30 60 60 75 20 25 50 50


    OCR Scan     		PDF 2N0918 2N2221 2N2222A 2N3646 2N3692 2N3702 2N3706 2N3709 2N3903 2N3904 Q4015T NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT

    transistor 2SA15

    Abstract: 2sa153 2SA15 2SA1539 2SC3954 QDSD475 SA15
    Text: Ordering number: EN 2 4 3 8 A 2SA1539/2SC3954 N0.2438A PNP/NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications i Applications . High-definition CRT display video output, wide-band amp Features . High fT: f\p=500MHz


    OCR Scan     		PDF 2SA1539/2SC3954 500MHz 120Vmin SC3954 39/2SC 1305047b transistor 2SA15 2sa153 2SA15 2SA1539 2SC3954 QDSD475 SA15

    44t transistor

    Abstract: AM1011-055
    Text: /= 7 SGS-THOMSON * 7 / . HDW HlLig¥MD gi AM1011-055 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS P R E L IM IN A R Y D A TA . REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED ■ 10:1 VSWR CAPABILITY . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING


    OCR Scan     		PDF AM1011-055 AM1011-055 1090MHz 1090MHz J133102E 44t transistor

    2SA900

    Abstract: 2SC1568
    Text: Power Transistors 2SA900 2SA900 Silicon PNP Epitaxial Planar Type P ackage Dim ensions A F Pow er A m plifier C om plem entary Pair with 2 S C 1 568 Unit ! mm • Features • Low co llector-em itter saturation voltage V c e i s » i i • TO-126 package, no insulator needed w hen fixing to a heat sink


    OCR Scan     		PDF 2SA900 2SC1568 O-126 200MHz 2SA900 2SC1568

    CZT2222A

    Abstract: vqe 14 E vqe 14 vqe 71 44t transistor transistor 44t
    Text: Central“ C Z T2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The C E N TR A L SE M IC O N D U C T O R CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and


    OCR Scan     		PDF CZT2222A CZT2222A 150mA, vqe 14 E vqe 14 vqe 71 44t transistor transistor 44t

    Untitled

    Abstract: No abstract text available
    Text: Central CZT2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and


    OCR Scan     		PDF CZT2222A CZT2222A OT-223 150mA,

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 141S NPN Silicon Digital Transistor Array ►Switching circuit, inverter, interface, driver circuit • T w o galvanic internal isolated Transistors in on e package > Built in bias resistor (R -|= 2 2 k il, R 2= 2 2 k fl) W Ds Q 6 2 7 0 2 -C 2 4 1 6


    OCR Scan     		PDF

    44t transistor

    Abstract: transistor 1B15 T110 imx7 transistor 44t
    Text: h 7 > v 7> £ /Transistors I M X 7 1 IMX7 T M V U - x ' y * K U î - J I ' K t V W X Isolated Mini-Mold Device /Medium Power Amp. • W B ’Ti&EI/Dim ensions Unit : mm 1) SMT (SC-59) tW i — h Tt' 5o 2) s M T < D i « î i * « i c j : » j , m u m j>(4)


    OCR Scan     		PDF SC-59) SC-74 44t transistor transistor 1B15 T110 imx7 transistor 44t

    44t transistor

    Abstract: No abstract text available
    Text: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 600 V 15 A lc Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~*thJC DC, pro Zweig / per arm


    OCR Scan     		PDF

    RXT-A28

    Abstract: marking 44t Transistors marking 69 rxta28 44t transistor SSTA28 XI100 transistor 44t high voltage npn transistor SOT-89 darlington Z 728
    Text: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. SST3 Features • Dimensions Units : mm l.9 ± 0 .2 available in the following packages: 03 0.95 0.95 — SST3 (SST, SOT-23) t+qii) | (z)|+] I — MPT3 (MPT, SOT-89),


    OCR Scan     		PDF OT-23) OT-89) SSTA28 RXT-A28 mc172 marking 44t Transistors marking 69 rxta28 44t transistor XI100 transistor 44t high voltage npn transistor SOT-89 darlington Z 728

    EER40

    Abstract: EER40 transformer stk730-090 EEL-22T transformer STK730D 2R40 STK730-080 stk730-030 STK730-060 EI transformer core power ratings
    Text: Ordering number: EN 4937 Thick Film Hybrid 1C no 4937 ¡I_STK730-060 Self-Excitation Type Semi-Regulated World Spec. Switching Regulator ( 1 1 0 W Output) Overview Package Dimensions The STK730-060 incorporates on-chip all the power


    OCR Scan     		PDF STK730-060 STK730-060 3R-40 STK730-010 STK730-020 STK730-030 STK730-040 STK730-050 STK730-D60 EER40 EER40 transformer stk730-090 EEL-22T transformer STK730D 2R40 STK730-080 stk730-030 EI transformer core power ratings

    Untitled

    Abstract: No abstract text available
    Text: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve


    OCR Scan     		PDF IRGB430U O-220AB 0G20375 TQ-220AB 4ASS452 02037b

    BD203

    Abstract: bdx77
    Text: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or


    OCR Scan     		PDF BD201 BD203 BDX77 BD202, BD204 O-220. BD203 bdx77

    BDX78

    Abstract: BD201 BD203 BD203 npn BDx77 box77 BD202 BD204
    Text: BD201 BD203 BDX77 SILICON EPITAXIAL-BASE POWER TRANSISTORS IMPN transistors in a plastic envelope. W ith their PNP complements BD202, BD204 and BDX78 they are prim arily intended fo r use in hi-fi equipment delivering an o u tp u t of 15 to 25 W into a 4 Î2 or


    OCR Scan     		PDF BD201 bd203 bdx77 BD202, BD204 BDX78 BD201 BD203 O-220. BD203 npn BDx77 box77 BD202

    2N3904

    Abstract: 2N3904 MOTOROLA 2n3903 2N3904 Equivalent equivalent al 2n3904 motorola 2N3904
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3903 2N3904* NPN Silicon ‘ Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage


    OCR Scan     		PDF 2N3903 2N3904* O-226AA) 2N3903 2N3904 b3b7255 2N3904 2N3904 MOTOROLA 2N3904 Equivalent equivalent al 2n3904 motorola 2N3904

    bc549 equivalent

    Abstract: BC550 BC550 Philips BC550C equivalent BC550 equivalent BC549 BC549 philips semiconductors BC550C BC549B equivalent bc549c equivalent
    Text: BC549 BC550 PHILIPS INT ER N AT I ONAL StE D • 711Qfl2t □ D4ED2ta 503 « P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.


    OCR Scan     		PDF BC549 BC550 711002b bc550 T-29-21 bc549 equivalent BC550 Philips BC550C equivalent BC550 equivalent BC549 philips semiconductors BC550C BC549B equivalent bc549c equivalent

    Untitled

    Abstract: No abstract text available
    Text: Optical DiSC ICs Optical disc ICs 14-channel BTL driver for CD players | BA6997FP/BA6997FM The BA6997FP and BA6997FM, both designed for CD players, have an internal 4-channel BTL driver and 5V regula­ tor which requires attached PNP transistor , as well as switches for the 5V regulator and temperature monitor pins.


    OCR Scan     		PDF 14-channel BA6997FP/BA6997FM BA6997FP BA6997FM,

    STP60N05FI

    Abstract: 20KN50 STP60N05 W237 SGS Transistor
    Text: 7=12=1237 □04fciS3cî Dfi2 • SGTH SGS-THOMSON STP60N05 STP60N05FI ¡ILJOTMiiKgS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP60N05 STP60N05FI ■ . ■ . ■ . ■ . . 50 V 50 V RDS on < 0.02 < 0.02 Ü n Id 60 A 32 A TYPICAL RDS(on) = 0.017 a


    OCR Scan     		PDF 04fci53cà STP60N05 STP60N05FI STP60N05 STP60N05FI 7TH1237 4b545 STP60N05/FI 20KN50 W237 SGS Transistor

    2SK2222

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2222 «Î0T7250 00233Û1 b74 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt-M O SII 5 2SK2222 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE


    OCR Scan     		PDF 0T7E50 2SK2222 300/iA O-22QAB O-220 50URCE O-220FL 00E3b43 O-220SM TDT725Q

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ^7550 0023574 553 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L2-7r-M0SM 2SK940 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, M OTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. • • • • • 2SK940 INDUSTRIAL APPLICATIONS U nit in mm


    OCR Scan     		PDF 2SK940 O-220SM Q0E3b44