48C21 Search Results

24w04

Abstract: KMM5322100BK
Contextual Info: DRAM MODULE KMM53221OOBKU/BKUG KMM53221 OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESCRIPTIO N FEATURES • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 Dynamic RAM high density memory module. The

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

Contextual Info: KMM372E21 3CK/CS DRAM MODULE KMM372E2 1 3CK/CS Fast Page with EDO Mo de 2Mx72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V G E N E R A L DESCRIPTION FEATURES The Samsung KMM372E213C is a 2M x72bits Dynamic RAM • Part Identification high density memory module. The Samsung KMM372E213C

48c2100

Abstract: KM48C2100-7
Contextual Info: PRELIMINARY 48C2100 CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung 48C2100 is a CMOS high speed 2,097,152 b it x 8 D ynam ic Random A cce ss M em ory. Its de sig n is op tim ized fo r high pe rform ance a p p lica tio n s

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

Contextual Info: KM48C2004C, 48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K

48C21

Contextual Info: KMM372C21 3CK/CS DRAM MODULE KMM 37 2C2 1 3CK /C S with Fast Page Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 5V G E N E R A L DESCRI PTION FEATURES The Samsung KM M 372C213C is a 2M x72bits Dynamic RAM • Part Identification high density memory module. The Sam sung KMM372C213C

KM48C2104B

Contextual Info: KM48C2004B, 48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2 M x 8 Bit C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data O ut CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin th e sam e row, so called H yper P age M ode. Power

Contextual Info: DRAM MODULE KMM53221OOBKU/BKUG KMM53221 OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322100BKU is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: KMM372C213AJ/AT DRAM MODULE KMM372C213AJ/AT Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The S am sung KM M 372C 213A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The tRAC 50ns 60ns 70ns KMM372C213A - 5

IC SRAM 8K X 8

Abstract: MTSC2568 AS7CI64 CY7CI88 7405M dram cross reference CY7C18S 2kx8 sram cross reference AS19F TC55328
Contextual Info: h u lu s in A Industry mss rei ti t n l r Fast SRAM Vendor Cypress Code ASC Code Description Code ASC Code CY7CIÛ06 AS7C1028 25bK*4 HPD4368 AS7C11>4 8K*8 CY7C18S AS7CI64 8Kx8 HPD43258A AS7C256 32K.X8 Vendor Description CY7CI88 AS7C2 59 3:.Kx9 HPD432S9A AS7C259

Contextual Info: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V G ENER AL D ESC RIPTIO N FEATURES The Samsung KMM364E213B is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364E213B consists of eight CMOS

Contextual Info: KM48C2000C, 48C2100C KM48V2000C, KM48V2100C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

Contextual Info: DRAM MODULE KMM53221OOCKU/CKUG KMM53221 OOCKU/CKUG with Fast Page Mode 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53221OOCKU is a 2M x32bits RAM high density memory module. The Dynamic • Part Identification