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    48DBM Price and Stock

    Bimba Manufacturing Company LT-048-DBM

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 8 in; Double Acting ; | Bimba LT-048-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-048-DBM Bulk 5 Weeks 1
    • 1 $80.35
    • 10 $80.35
    • 100 $80.35
    • 1000 $80.35
    • 10000 $80.35
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    Bimba Manufacturing Company LT-3148-DBM

    Thruster, Linear Thruster Cylinder ; 2in Bore ; Stroke: 48 in; Double Acting ; | Bimba LT-3148-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-3148-DBM Bulk 5 Weeks 1
    • 1 $383.26
    • 10 $383.26
    • 100 $383.26
    • 1000 $383.26
    • 10000 $383.26
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    Bimba Manufacturing Company LT-7048-DBM

    Thruster, Linear Thruster Cylinder ; 3in Bore ; Stroke: 48 in; Double Acting ; | Bimba LT-7048-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-7048-DBM Bulk 5 Weeks 1
    • 1 $562.85
    • 10 $562.85
    • 100 $562.85
    • 1000 $562.85
    • 10000 $562.85
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    Bimba Manufacturing Company LT-048-DBMT1

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 8 in; Double Acting ; | Bimba LT-048-DBMT1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-048-DBMT1 Bulk 5 Weeks 1
    • 1 $85.49
    • 10 $85.49
    • 100 $85.49
    • 1000 $85.49
    • 10000 $85.49
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    Bimba Manufacturing Company LT-3148-DBMT1

    Thruster, Linear Thruster Cylinder ; 2in Bore ; Stroke: 48 in; Double Acting ; | Bimba LT-3148-DBMT1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-3148-DBMT1 Bulk 5 Weeks 1
    • 1 $388.35
    • 10 $388.35
    • 100 $388.35
    • 1000 $388.35
    • 10000 $388.35
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    Find more 48DBM price and stock on Findchips.com

    48DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DS110505

    Abstract: RFPA3800 SCHEMATIC circuit high frequency POWER SUPPLY ind output 7.5v DC Power Jack Application of tuned amplifier gsm transceiver power amplifier circuit diagram schematic diagram of bluetooth s9 RFMD PA LTE 920MHz
    Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation


    Original     		PDF RFPA3800 960MHz 150MHz 960MHz 48dBm 945MHz RFPA3800 DS110505 DS110505 SCHEMATIC circuit high frequency POWER SUPPLY ind output 7.5v DC Power Jack Application of tuned amplifier gsm transceiver power amplifier circuit diagram schematic diagram of bluetooth s9 RFMD PA LTE 920MHz

    P0110009P

    Abstract: gaas fet marking a ISO-14001 KP029J P0120009P RR0816 48dBm High power fet 2.4ghz
    Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package


    Original     		PDF P0120009P 48dBm OT-89 17GHz KP029J P0120009P P0110009P gaas fet marking a ISO-14001 KP029J RR0816 48dBm High power fet 2.4ghz

    Untitled

    Abstract: No abstract text available
    Text: RFSA2644 RFSA2644 Serial Controlled Digital Step Attenuator SERIAL CONTROLLED DIGITAL STEP ATTENUATOR 50MHz TO 4000MHz, 6-BIT, 0.5dB LSB High Linearity, IP3 >48dBm  3V and 5V Logic Compatible  Serial-to-Parallel Controller  Serial Programming Interface


    Original     		PDF RFSA2644 50MHz 4000MHz, 24-Pin, RFSA2644 DS120706

    siemens g52

    Abstract: LT5554
    Text: LT5554 Broadband Ultra Low Distortion 7-Bit Digitally Controlled VGA DESCRIPTION FEATURES n n n n n n n n n n n 1GHz Bandwidth at all Gains 48dBm OIP3 at 200MHz, 2VP-P into 50Ω, ROUT = 100Ω –88dBc IMD3 at 200MHz, 2VP-P into 50Ω, ROUT = 100Ω 1.4nV/√Hz Input-Referred-Noise RTI


    Original     		PDF LT5554 48dBm 200MHz, 88dBc 20dBm 70MHz, 125dB 600Mhz 26dBm siemens g52 LT5554

    Untitled

    Abstract: No abstract text available
    Text: RFSA2514 RFSA2514 Serial Controlled Digital Step Attenuator 50MHz to 4000MHz, 5Bit, 0.5dB LSB SERIAL CONTROLLED DIGITAL STEP ATTENUATOR 50MHz TO 4000MHz, 5-BIT, 0.5dB LSB High Linearity, IIP3 >48dBm  3V and 5V Logic Compatible  Serial-to-Parallel Controller


    Original     		PDF RFSA2514 50MHz 4000MHz, 4000MHz 24-Pin, RFSA2514

    920MHz

    Abstract: RFMD PA LTE class c tuned amplifier
    Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation


    Original     		PDF RFPA3800 960MHz RFPA3800 150MHz 48dBm 945MHz DS120103 920MHz RFMD PA LTE class c tuned amplifier

    LT5554

    Abstract: No abstract text available
    Text: News Release  www.linear.com Broadband, Super-Low Distortion Digitally Programmable IF VGA Improves Signal Integrity Performance MILPITAS, CA – December 16, 2008 – Linear Technology introduces the LT5554, a broadband digitally programmable gain IF amplifier, featuring a 48dBm OIP3 output 3rd order intercept at


    Original     		PDF LT5554, 48dBm 200MHz. 125dB LT5554

    variable attenuator at 15GHz with input power 12dBm

    Abstract: bpf 200mhz LT5554 siemens g52 ETC1-1-13 LT5514 LTC5508 LT5570
    Text: LT5554 Broadband Ultra Low Distortion 7-Bit Digitally Controlled VGA DESCRIPTION FEATURES n n n n n n n n n n n 1GHz Bandwidth at all Gains 48dBm OIP3 at 200MHz, 2VP-P into 50Ω, ROUT = 100Ω –88dBc IMD3 at 200MHz, 2VP-P into 50Ω, ROUT = 100Ω 1.4nV/√Hz Input-Referred-Noise RTI


    Original     		PDF LT5554 48dBm 200MHz, 88dBc 20dBm 70MHz, 125dB 26dBm 12dBm variable attenuator at 15GHz with input power 12dBm bpf 200mhz LT5554 siemens g52 ETC1-1-13 LT5514 LTC5508 LT5570

    lte RF Transceiver 450MHz

    Abstract: RFPA3800 RFMD LTE transceiver class c tuned amplifier RFPA3800PCK-410 RFPA3800PCK-411 RFPA3800SQ 5W amplifier tone RFPA3800TR7 RFMD PA LTE
    Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation


    Original     		PDF RFPA3800 960MHz 150MHz 960MHz 48dBm 945MHz RFPA3800 DS101021 lte RF Transceiver 450MHz RFMD LTE transceiver class c tuned amplifier RFPA3800PCK-410 RFPA3800PCK-411 RFPA3800SQ 5W amplifier tone RFPA3800TR7 RFMD PA LTE

    UMK105cg

    Abstract: 500R07S1R2 GSM WCDMA repeater circuit LQP15MN 500R07S RFMD PA LTE DS120611 RFPA3800 500r07 MuRata Electronics Kamaya
    Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation


    Original     		PDF RFPA3800 960MHz RFPA3800 150MHz 48dBm 945MHz DS120611 UMK105cg 500R07S1R2 GSM WCDMA repeater circuit LQP15MN 500R07S RFMD PA LTE DS120611 500r07 MuRata Electronics Kamaya

    Untitled

    Abstract: No abstract text available
    Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=3.2dB at 945MHz  5V to 7V Operation


    Original     		PDF RFPA3800 960MHz 150MHz 960MHz 48dBm 945MHz RFPA3800 DS120611

    P0110009P

    Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
    Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


    Original     		PDF P0120009P 48dBm OT-89 P0120009P P0110009P Susumu RL series part Marking KP029J RR0816 marking c7 sot-89

    schematic diagram of bluetooth s9

    Abstract: RFPA3800 SCHEMATIC circuit high frequency POWER SUPPLY ind RFMD PA LTE GSM WCDMA repeater circuit 500R07S120GV4TD MuRata Electronics
    Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation


    Original     		PDF RFPA3800 960MHz RFPA3800 150MHz 48dBm 945MHz DS110203 schematic diagram of bluetooth s9 SCHEMATIC circuit high frequency POWER SUPPLY ind RFMD PA LTE GSM WCDMA repeater circuit 500R07S120GV4TD MuRata Electronics

    LTC3300

    Abstract: LTspice DIODE ZENER 3.1V 250mW LTC3105 supercapacitor spice balancing circuit for supercapacitor thermoelectric generator model reports LTM8047 ltc4425 Sanyo supercapacitors
    Text: January 2012 I N T H I S I S S U E integer-N synthesizer with integrated VCO in a 4mm x 5mm package 9 supercapacitor-based power supply ride-through system 15 ultralow-EMI, µModule Volume 21 Number 4 Dual Output DC/DC Controller Combines Digital Power System


    Original     		PDF EN55022 LT1638 LT1970A com/516 LT1970A SW-COC-001530 LTC3300 LTspice DIODE ZENER 3.1V 250mW LTC3105 supercapacitor spice balancing circuit for supercapacitor thermoelectric generator model reports LTM8047 ltc4425 Sanyo supercapacitors

    EFA480C-SOT89

    Abstract: No abstract text available
    Text: Excelics EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Features     '5$,1 6285&     (Top View All Dimensions In Mils Applications • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE


    Original     		PDF EFA480C-SOT89 48dBm EFA480C-SOT89

    TRANSISTOR R1002

    Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
    Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing


    Original     		PDF R1002 MIL-STD-883 TRANSISTOR R1002 R1002 TRANSISTOR R1002 84-1LMI XR1002

    RF2316

    Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures
    Text: TA0015  TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data


    Original     		PDF TA0015 RF2312/RF2317: RF2316 TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures

    12v 100w AUDIO AMPLIFIER CIRCUIT

    Abstract: No abstract text available
    Text: OPA 3695 OPA3693 www.ti.com . SBOS353A – DECEMBER 2006 – REVISED AUGUST 2008 Triple, Ultra-Wideband, Fixed-Gain,


    Original     		PDF OPA3693 SBOS353A 650MHz 40dBm 50MHz) 130mW/channel OPA3693 12v 100w AUDIO AMPLIFIER CIRCUIT

    ACL MARKING

    Abstract: No abstract text available
    Text: OPA846 OPA OPA84 846 6 SBOS250A – JULY 2002 – REVISED MARCH 2003 Wideband, Low-Noise, Voltage-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● HIGH BANDWIDTH: 400MHz G = +10 ● HIGH DYNAMIC RANGE ADC PREAMPS ● LOW-NOISE, WIDEBAND, TRANSIMPEDANCE


    Original     		PDF OPA846 OPA84 SBOS250A 400MHz 100dBc 1750MHz OPA686, CLC425, LMH6624 OPA846IDBVT ACL MARKING

    KESTX01

    Abstract: KESTX02
    Text: KESTX01/KESTX02 At 900MHz Application Note AN4807 The KESTX01 and KESTX02 are designed for use in the 290-470MHz region, with a push-pull output stage designed to reduce second harmonic emissions when a suitable balanced output circuit is used. There is a


    Original     		PDF KESTX01/KESTX02 900MHz AN4807 KESTX01 KESTX02 290-470MHz 900MHz KESTX01

    Untitled

    Abstract: No abstract text available
    Text: TGA2312-FL X-band 60W GaN Power Amplifier Applications • Commercial and Military Radar  Communications Product Features         Functional Block Diagram Frequency Range: 9 – 10 GHz PSAT : 48 dBm PAE: 38% Small Signal Gain: 13 dB


    Original     		PDF TGA2312-FL 100us, TGA2312-FL 48dBm

    TIM3536-60

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM 3536-60 FEATURES : •HIGH POWER ■ P1dB=48dBm ■ HIGH at 3 . 5 GH z to ■ at 3 . 5 GH z to HERMETICALLY ELECTRICAL CHARACTERISTICS PACKAGE > > CO o Il II Z Û Ul MIN. 47.0 TYP.


    OCR Scan     		PDF TIM3536-60 48dBm -TIM3536-60 IDS-12A VDS-12V TIM3536-60

    11293

    Abstract: No abstract text available
    Text: HWF1688RA HSXAWAVS High Power GaAs FET September 1998 Rev.B Features • High Output Power PidB=36.5dBm typ. @2.4GHz • High Gain G l= OUTLINE DRAWING 12.5dB(typ.)@2.4GHz 1.625(0.065) • High Efficiency T|add =40%(typ.)@2.4GHz • High Linearity IP3=48dBm(typ.)@2.4GHz


    OCR Scan     		PDF HWF1688RA 48dBm F1688R Cer75 11293

    Untitled

    Abstract: No abstract text available
    Text: HWF1682CM HSXAWAVE High Power GaAs FET August 1998 Rev. A Features • High O u tp u t Pow er O U TLIN E D R A W IN G Pi<ffi=37dBm typ. @2.4GHz • High G ain 17.50 Gl= 12.5dB(typ.)@2.4GHz • High Efficiency • High L inearity Tjadd =40%(typ.)@2.4GHz IP3=48dBm(typ.)@2.4GHz


    OCR Scan     		PDF 37dBm HWF1682CM 48dBm F1682C