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    LEDIL F18248_DAISY-MINI-FT-D

    LED Lighting Lenses CLEAR LINEAR LENS SHADE SOLD SEPARATELY
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    Mouser Electronics F18248_DAISY-MINI-FT-D 189
    • 1 $3.35
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    InvenSense Inc ICM-20648MINI

    Accelerometer and Gyroscope 6-Axis Digital 24-Pin QFN T/R (Alt: ICM-20648MINI)
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    Avnet Abacus ICM-20648MINI 143 Weeks 500
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    48MINI Datasheets Context Search

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    15ha3

    Abstract: IS63WV1024BLL IS63WV1024BLL-12HI IS63WV1024BLL-12HLI IS63WV1024BLL-12JI IS63WV1024BLL-12TI IS63WV1024BLL-12TLI IS64WV1024BLL
    Text: IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM JANUARY 2010 FEATURES DESCRIPTION • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V – 3.6V • High-performance, low-power CMOS process • CMOS Low Power Operation 50 mW typical operating current


    Original     		PDF IS63WV1024BLL IS64WV1024BLL 32-pin 48-Ball 300-mil IS63/64WV1024BLL 15ha3 IS63WV1024BLL IS63WV1024BLL-12HI IS63WV1024BLL-12HLI IS63WV1024BLL-12JI IS63WV1024BLL-12TI IS63WV1024BLL-12TLI IS64WV1024BLL

    Untitled

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM CS16LV40963 256k word x 16 bit „ DESCRIPTION The CS16LV40963 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques


    Original     		PDF CS16LV40963 CS16LV40963 50/55/70ns CS160

    IS63WV1024BLL

    Abstract: No abstract text available
    Text: IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2012 FEATURES DESCRIPTION • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V – 3.6V • High-performance, low-power CMOS process • CMOS Low Power Operation 50 mW typical operating current


    Original     		PDF IS63WV1024BLL IS64WV1024BLL 32-pin 48-Ball 300-mil IS63/64WV1024BLL 072-word

    IS61WV1288EEBLL

    Abstract: No abstract text available
    Text: IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MARCH 2014 DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)


    Original     		PDF IS61WV1288EEBLL IS64WV1288EEBLL IS61/64WV1288EEBLL 576-bit MS-027. IS61/64WV1288EEBLL MO-207 IS61WV1288EEBLL

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical)


    Original     		PDF IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS IS63/64WV1288DALL/DBLL) IS63/64WV1288DALS/DBLS) IS63WV1288DAxx) IS63/64WV1288DBxx) MS-027.

    DBLL

    Abstract: IS63WV1288DBLL
    Text: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical)


    Original     		PDF IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS IS63/64WV1288DALL/DBLL) IS63/64WV1288DALS/DBLS) IS63WV1288DAxx) IS63/64WV1288DBxx) MS-027. DBLL IS63WV1288DBLL

    CS26LV16163

    Abstract: No abstract text available
    Text: Low Power Pseudo SRAM CS26LV16163 1M word x 16 bit „ Description The CS26LV16163 is a high performance, high speed, low power pseudo SRAM organized as 1, 0487,576 words by 16 bits and operates from a wide range of 2.7 to 3.3V supply voltage. Advanced DRAM technology and circuit techniques provide both high speed


    Original     		PDF CS26LV16163 CS26LV16163 70/85ns 48-pin 48Mini 48Ball

    CS18LV40963CI

    Abstract: CS18LV40963D
    Text: High Speed Super Low Power SRAM 512k word x 8 bit CS18LV40963 „ DESCRIPTION The CS18LV40963 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques


    Original     		PDF CS18LV40963 CS18LV40963 50/55/70ns CS18LVrved. 36-ball 2004-March CS18LV40963CI CS18LV40963D

    IS61WV1288EEBLL

    Abstract: 128kx4
    Text: IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2012 DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)


    Original     		PDF IS61WV1288EEBLL IS64WV1288EEBLL IS61/64WV1288EEBLL 576-bit MS-027. IS61/64WV1288EEBLL MO-207 128kx4

    Untitled

    Abstract: No abstract text available
    Text: IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2012 DESCRIPTION The฀ ISSI฀ IS61/64WV1288EEBLL฀ is฀ a฀ ฀ high-speed,฀ FEATURES •฀ High-speed฀access฀time:฀8,฀10฀ns •฀ Low฀Active฀Power:฀85฀mW฀ typical


    Original     		PDF IS61WV1288EEBLL IS64WV1288EEBLL IS61/64WV1288EEBLLà 576-bità MS-027. IS61/64WV1288EEBLL MO-207

    IS63WV1288DALL

    Abstract: No abstract text available
    Text: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION FEBRUARY 2010 FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical)


    Original     		PDF IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS IS63/64WV1288DALL/DBLL) IS63/64WV1288DALS/DBLS) IS63WV1288DAxx) IS63/64WV1288DBxx) IS63WV1288DALL

    15ha3

    Abstract: IS63WV1024BLL IS63WV1024BLL-12HI IS63WV1024BLL-12HLI IS63WV1024BLL-12JI IS63WV1024BLL-12TI IS63WV1024BLL-12TLI IS64WV1024BLL
    Text: ISSI IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2006 FEATURES DESCRIPTION • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V – 3.6V • High-performance, low-power CMOS process • CMOS Low Power Operation 50 mW typical operating current


    Original     		PDF IS63WV1024BLL IS64WV1024BLL 32-pin 48-Ball 300-mil IS63/64WV1024BLL 15ha3 IS63WV1024BLL IS63WV1024BLL-12HI IS63WV1024BLL-12HLI IS63WV1024BLL-12JI IS63WV1024BLL-12TI IS63WV1024BLL-12TLI IS64WV1024BLL

    IS63WV1288DBLL-10HI

    Abstract: IS63WV1288DBLL-10H
    Text: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION FEBRUARY 2010 FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical)


    Original     		PDF IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS IS63/64WV1288DALL/DBLL) IS63/64WV1288DALS/DBLS) IS63WV1288DAxx) IS63/64WV1288DBxx) IS63WV1288DBLL-10HI IS63WV1288DBLL-10H

    Untitled

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM 128k Word By 16 bit CS16LV20483 „ DESCRIPTION The CS16LV20483 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques


    Original     		PDF CS16LV20483 CS16LV20483 55/70ns CS16LV0

    Untitled

    Abstract: No abstract text available
    Text: Low Power Pseudo SRAM CS26LV32163 2 M word x 16 bit „ Description The CS26LV32163 is a high performance, high speed, low power pseudo SRAM organized as 2,097,152 words by 16 bits and operates from a wide range of 2.7 to 3.3V supply voltage. Advanced DRAM technology and circuit techniques provide both high speed


    Original     		PDF CS26LV32163 CS26LV32163 70/85ns 48-pin 48Mini 48Ball

    Untitled

    Abstract: No abstract text available
    Text: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION AUGUST 2009 FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical)


    Original     		PDF IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS IS63/64WV1288DALL/DBLL) IS63/64WV1288DALS/DBLS) IS63WV1288DAxx) IS63/64WV1288DBxx)

    Untitled

    Abstract: No abstract text available
    Text: AMIC TECHNOLOGY Taiwan , INC. Spec. No. : 04-83-002 Update : 12/17/1999 Pages : 1 of 9 TAPE&REEL PACKING SPECIFICAITON 1. Packing Procedures 2. Carrier Tape Dimensions - 28SOP,26/28SOJ,28TSOP,32sTSOP 3. Carrier Tape Dimensions - 32/40/44SOP,32/40SOJ,32/44/50TSOP,100QFP


    Original     		PDF 28SOP 26/28SOJ 28TSOP 32sTSOP 32/40/44SOP 32/40SOJ 32/44/50TSOP 100QFP 36/48Mini-BGA

    Untitled

    Abstract: No abstract text available
    Text: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical)


    Original     		PDF IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS IS63/64WV1288DALL/DBLL) IS63/64WV1288DALS/DBLS) IS63WV1288DAxx) IS63/64WV1288DBxx)

    Untitled

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM CS16LV81923 512k Word By 16 bit „ DESCRIPTION The CS16LV81923 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques


    Original     		PDF CS16LV81923 CS16LV81923 55/70ns 44TSOP 400mil) 48Mini