48V81 Search Results

Contextual Info: KMM 372F80 8 3BK/BS DRAM MODULE Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 KMM 372F80(8)3BK/BS DRAM MODULE Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t c acp (access time from CAS) and tAAP (access time from col. addr.) in A C C H A R A C T E R IS T IC S .

48V81

Abstract: DG41 SO DIMM DRAM 144 Pin Connector Pinout
Contextual Info: KMM372V803AK/AS KMM372V883AK/AS DRAM MODULE KMM372V803AK/AS & KMM372V883AK/AS Fast Page Mode 8Mx72 DRAM DIMM with ECC based on 8Mx8, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V80 8 3A is a 8M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: KMM374F883AK KMM374F803AK DRAM MODULE KMM374F883AK & KMM374F803AK EDO Mode without buffer 8Mx72 DRAM DIMM with ECC based on 8Mx8, 8K & 4K Refresh, 3.3V G EN ER AL D ESCRIPTIO N FEATURES The Samsung KMM374F88 0 3AK is a 8M bit x 72 Dynamic RAM high density memory module. The

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

Contextual Info: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8Mx32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G EN ERA L DESC RIPTIO N FEATURES T h e S a m s u n g K M M 3 3 2 V 8 0 3 A is a 8 M b it X 32 D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e

km48v8104ak

Abstract: KMM374F803AK
Contextual Info: KMM374F883AK KMM374F803AK DRAM MODULE KMM374F883AK & KMM374F803AK EDO Mode without buffer 8Mx72 DRAM DIMM with ECC based on 8Mx8, 8K & 4K Refresh, 3.3V G ENERAL DESCRIPTIO N FEATURES The Samsung KMM374F88 0 3AK is a 8M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: CMOS DRAM KM48V8000B, 48V81OOB 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T h is is a fa m ily o f 8 ,3 8 8 ,6 0 8 x 8 bit F ast P a g e M ode C M O S D R A M s. F ast P age M ode o ffe rs high sp e e d ran d o m a cce ss o f m e m o ry cells

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

Contextual Info: KM48V8000A, 48V8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 8,388,608 x 8 bit Fast Page Mode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. , access tim e(-5, -6,

ca5J

Contextual Info: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8Mx32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTION FEATURES The Sam sung KM M 332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The • Part Identification

Contextual Info: KMM374F883AK KMM374F803AK DRAM MODULE KMM374F883AK & KMM374F803AK EDO Mode without buffer 8Mx72 DRAM DIMM with ECC based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F88 0 3AK is a 8M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: KM48V8004A, 48V8104A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 8,388,608 x 8 bit Extended Data O ut M ode CM OS DRAM s. Extended D ata Out M ode offers high speed random access of m em ory cells within the same row. Refresh cycle 4K Ref. o r 8K Ref. ,

Contextual Info: KM48V8000A, 48V8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 8,388,608 x 8 bit Fast Page M ode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5 -6