4B750FIFI Search Results

Contextual Info: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.

HY514460

Contextual Info: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

Contextual Info: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.

Contextual Info: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees

Contextual Info: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

721 KXC

Abstract: moc 3048
Contextual Info: «HYUNDAI H Y 6 2 V 8 1 0 0 A 128K S e r ie s CMOS SRAM X 8 -b it PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131.072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that

Contextual Info: ♦H Y U N D A I HYM536400 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536400 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of thirty six HY514100 in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

Contextual Info: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.

Contextual Info: HYM532200A M-Series •HYUNDAI 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200A Is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22fi? decoupling capacitor is mounted for each DRAM.

Contextual Info: m V Y m I I I I 11 A I H Y 5 7 V 1 6 1 6 1 I V H U ft I S e r ie s 1M X 16 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16161 is a very high speed 3.3 Volt synchronous dynamic RAM organized 1,048,476x16 bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 524,288 words

Contextual Info: «HYUNDAI HYM5V72A414A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V17404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.22nFdecoupiing

HY51V17404A

Abstract: HY51V17404AJ60 00045n
Contextual Info: HY51V17404A Series • H Y U N D A I 4 M X 4-b it CMOS DRAM W ith Extended Data O ut DESCRIPTION The HY51V17404Aisthe new generation andfast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYM581000B M-Series • H Y U N D A I 1M x8-btt CMOS DRAM MODULE DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

Contextual Info: HYUNDAI SEMICONDUCTOR HYM594000 Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000 is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

HYM536120

Contextual Info: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling

Contextual Info: HYUNDAI HY51V16404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V16404B is the new generation and fa st dynam ic RAM organized4,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CM OS silicon gate process technology as advanced circuit techniques to provide wide operating

512Kx1+DRAM

Contextual Info: HY514100B Series •HYUNDAI 4M X 1 -b lt CMOS DRAM PRELIMINARY DESCRIPTION The HY5141OOB is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. th e HY514100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HY51V17805B Series •«HYUNDAI 2M X 8-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V17805B is the new generation and fast dynamic RAM organized 2,097,152x8-bit. The HY51V17805B utilized Hyundai’s CMOS silicon gate process technology as well as advenced circuit techniques to prove wide

Contextual Info: HY5116400 Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY5116400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: -HYUNDAI HY514100 Series 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: •HYUNDAI SEMICONDUCTOR H Y 5116410 S e rie s 4M X 4-blt CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced