4BFIB22B Search Results

thyristor st 103

Abstract: mcc95 16 101 CD-951 MCC90 MCC95-12IO1 v06v MCR-SL-S-1/thyristor st 103
Contextual Info: 4bE D • 4bfib22b G D Q i n e S » I X V I X V S CORP D IX Y S T - z s Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 >1 >i > V *» V om V 400 600 800 1200 1400 1600 MCC95 i TAV = 2 x 1 1 6 a MCD95 vRRM= 400- I 600 v Type Version 1 Version 8

KYS 30 40 diode

Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Contextual Info: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching

2675000101

Abstract: 6B40 bridge diode IXBD4410PC schematic diagram inverter 12v to 5v 30a ic driver mosfet 8 pin 4413 ic 4410 8pin schematic diagram 24v UPS 1XBD4410 schematic diagram inverter 24V to 12v 30a schematic diagram welding inverter full bridge
Contextual Info: 4bE D • I MbôbEEb 000105Ö 1 H IX Y X Y S CORP □IX Y S PRELIMINARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V or Greater Low- to High-Side Isolation.

Contextual Info: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM

23Z129

Abstract: ci 4411 welding p91 schematic diagram welding inverter ic 4410 8pin IXBD 4413 IXBD4410 IXBD4411PI ixdp630 schematic diagram welding inverter control
Contextual Info: ISOSMART Half Bridge Driver Chipsets • Type Description Package IXBD4410PI IXBD4411 PI Full-Feature Low-Side Driver Full-Feature High-Side Driver 16-Pin P-DIP 16-Pin P-DIP -40 to +85°C -40 to +85°C • IXBD441 OSI IXBD4411SI Full-Feature Low-Side Driver

Contextual Info: □IXYS Advanced Technical Information Super Fast Recovery Diode DSDI60 IFAVM 63 A vr 1400-1800 V RRM trr v RSM v RRM V Type 1400 1600 1800 Symbol C TO-247 AD DSDI 60-14A DSDI 60-16A DSDI 60-18A Test Conditions Maximum Ratings A A A t = 10 ms 50 Hz , sine

150-12SE

Abstract: VIE150-12S FIB5 IXYS IGBT 3kv igbt inverter circuit for induction heating Induction Heating Resonant Inverter
Contextual Info: Mfc.fit.22b 0001027 3bS IX Y ISOSMART IG B T M o d u le s \ 1 nixYS 19 93IXYS Corporation IXYS Corporation iibflb22b 0DDlfl2B ST1 • IXY VIE 150-12SE ISOSMART™ Module Description of the ISOSMART™ Module The VIE150-12SE module, shown diagrammatically in Figure 1, is a 1200V, 150A, IGBT

Contextual Info: YS Thyristor Modules Thyristor/Diode Modules MCC 312 MCD 312 ^TRMS ^TAVM V RRM VRSM VRRM v DSM ^D R M V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC 312-12io1 MCC 312-14io1 MCC 312-16io1 MCC 312-18io1 Test Conditions ^TAVM’ ^FAVM Tc = 85°C; 180°!sine

Contextual Info: -*r -jr r'“'* Y S X w X v Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A * DSS ^D25 500 V 500 V 12 A 12 A p DS on a 0.4 Q 0.4 N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj V DGR Maximum Ratings = 25°C to 150°C 500 V T j = 25°C to 150°C; RgS = 1 M il

Contextual Info: • MbflbS2b GQGlbS3 b^S H I X Y a ix Y S Thyristor Modules MCC19 iTAV= 2 x 18 A Vrpm = 600-1600 V i 1 1 > > > ; 1 1 1 > > > 700 900 1300 1500 1700 Type Version 1 B 600 800 1200 1400 1600 MCC19-06ÌO1 MCC19-08io1 MCC19-12io1 MCC19-14io1 MCC19-16io1 Symbol

Contextual Info: MegaMOS FET IXTN79N20 V DSS = 200 V ^ D 2 5 _ D _ DS on ” 85 A 25 mQ N-Channel Enhancement Mode OD G 1 KS r ¿ s Maximum Ratings miniBLOC, SOT-227 B 200 V s 200 V Continuous ±20 V Transient ±30 V Symbol Test Conditions VDSS Tj = 25°C to 150°C v DGR

IXGH24N60BU1

Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Contextual Info: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600

Contextual Info: 4 b ß b 2 2 b Q G O I S S D TTS « I X Y □IXYS Dual Power MOSFET Modules VMM 32-045 ID cont = 32 A v* D S S □ DS(on) = 450 V = 0.13 Q 4= 4444=4 7 3 4 N-Channel Enhancement Mode 8 6 2 1 Prelim inary data Symbol Test Conditions V * Tj = 25'C to 150‘ C

D-6840

Abstract: transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101
Contextual Info: 4bE D • Mb ô b E E b I X Y S 000105Ö 1 H IX Y CORP □IXYS T ’- S Z . H V ^ O PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V o r Greater Low- to High-Side Isolation.

Contextual Info: ISOSMART Half Bridge Driver Chipsets Type Description Package IXBD4410PI IXBD4411 PI Full-Feature Low-Side Driver Full-Feature High-Side Driver 16-Pin P-DIP 16-Pin P-DIP -40 to +85°C -40 to +85°C • IXBD441 OSI IXBD4411SI Full-Feature Low-Side Driver

Contextual Info: I IXLN 35N120A IGBT V CES IC25 V CE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Prelim inary data Maximum Ratings Symbol Test Conditions v CES Tj = 25°C to 150°C 1200 V V CGR T,J = 25°C to 150°C;' F U = 1 MC2 (a t 1200 V v GES Continuous

Contextual Info: □ IXYS IGBT Module VII125-12G4 IC DC Half-Bridge Configuration V , CES = 125 A = 1200 V V CE(sat) = 2.9 V High Short Circuit SOA Capability Symbol Test C onditions VCES Tj = 25°C to 150°C T,J = 25°C to 150°C;’ RCat ^ = 1 M fl Maximum Ratings 1200

1XFH12n100

Abstract: transistor 13n80
Contextual Info: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure

IXSE502

Contextual Info: HbflbSBb DDG13flb 3 ^ • IXY □ IXYS Data Sheet No. 915502A July 1993 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 Features Direct two-channel Quadrature Inputswith Schmitt Trigger Circuitry X4 Quadrature Detection for High Resolution EXTERNAL EVENT Detection and Latching for

Contextual Info: □IXYS ISOSMART IGBT Module VIE100-12S4 lc =100 A VCES = 1200 V Intelligent Power Module IPM with integrated galvanic isolation interface High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C

1.8 degree bipolar stepper motor

Contextual Info: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution

Contextual Info: High Power Diode Modules v RSM VRRM V V 900 1300 1500 1700 Symbol ^FAVM ^FSM Type MDD MDD MDD MDD Maximum Ratings Test Conditions 450 290 t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine 11 000 11 700 9000 9600 A A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

Contextual Info: MbflhSEb 0 0 0 1 5 3 3 'ìlb * I X Y IXSN51N60AU1 IGBT with Diode IC25 VCES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V Preliminary data (09/93) Maximum Ratings Symbol Test Conditions v" c e s Tj = 25'C to 150‘C 600 V v COR Tj = 25’ C to 150‘C; RGE= 1 Mi2

IXTH13P20

Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­