4K X 1 DRAM Search Results

Contextual Info: L4B7SE5 □ Q 4f l cì 7 3 M5T NECE NEC 16M DRAMs cont ORGANIZATION FEATURES PACKAGE 2M x 8 Fast-page access, 4K refresh, self-refresh 2M x 8 2M x 8 2M x 8 1 M x 16 1 M x 16 1 M x 16 1M x 16 Fast-page access, 4K refresh, self-refresh Hyper-page access, 4K refresh

Contextual Info: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M x 4 components 8-Mword x 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M x 16 & 4 pcs of 4M x 4 components)

CAPACITOR 64 680 4J

Abstract: 11DQ12 8dq9 Nippon capacitors
Contextual Info: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M X 4 components 8-Mword X 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M X 16 & 4 pcs of 4M x 4 components)

Contextual Info: UG216E3654HKG T 64M Bytes (16M x 36) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216E3654HKG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3654HKG(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAM in 400mil Package and 4 pcs of 16M x 1

Contextual Info: UG216C3654HKG T 64M Bytes (16M x 36) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216C3654HKG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3654HKG(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAMs in 400mil Package and 4 pcs of 16M x 1 DRAMs in

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Contextual Info: UG216E3261GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3261GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3261GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Packages mounted on 72 Pin

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Contextual Info: UG216E3211GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3211GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3211GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

Contextual Info: UG216C3611GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3611GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3611GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAM in SOJ Package and 2 pcs of ABT16

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Abstract: ras 510 UG216C3261GJG 45388
Contextual Info: UG216C3261GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3261GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3261GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Packages mounted on 72 Pin

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Abstract: we 510 UG216C3211GJG
Contextual Info: UG216C3211GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3211GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3211GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

Contextual Info: UG216E3611GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3611GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3611GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

UG216C3221GJG

Contextual Info: UG216C3221GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3221GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3221GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

Contextual Info: UG216C3661GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3661GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3661GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package mounted on 72 Pin

Contextual Info: UG216E3221GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3221GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3221GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

Contextual Info: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes

Nippon capacitors

Contextual Info: HB56HW465DB-5/5L/6/6L 32MB EDO DRAM S.O.DIMM 4-Mword x 64-bit, 4k refresh, 1 Bank Module 4 pcs of 4M x 16 components HITACHI ADE-203-861 (Z) Preliminary, Rev. 0.0 Nov. 10, 1997 Description The HB56HW465DB is a 4 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O.

Nippon capacitors

Contextual Info: HB56UW865DB-5/5L/6/6L 64MB EDO DRAM S.O.DIMM 8-Mword x 64-bit, 4k refresh, 1 Bank Module 8 pcs of 8M x 8 components HITACHI ADE-203-862 (Z) Preliminary, Rev. 0.0 Nov. 11, 1997 Description The HB56UW865DB Series is a 8 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S.

Contextual Info: HB56UW865DB-5/5L/6/6L 64MB EDO DRAM S.O.DIMM 8-Mword x 64-bit, 4k refresh, 1 Bank Module 8 pcs of 8M x 8 components HITACHI ADE-203-862A (Z) Rev. 1.0 May 15, 1998 Description The HB56UW865DB Series is a 8 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S.

Contextual Info: HB56UW865DB-5/5L/6/6L 64MB EDO DRAM S.O.DIMM 8-Mword x 64-bit, 4k refresh, 1 Bank Module 8 pcs of 8M x 8 components HITACHI ADE-203-862 (Z) Preliminary, Rev. 0.0 Nov. 11, 1997 Description The HB56UW865DB Series is a 8 M x 64 Dynamic RAM Small Outline Dual In-line M emory M odule (S.

Contextual Info: HB56HW465DB -5/5L/6/6L 32MB EDO DRAM S.O.DIMM 4-Mword x 64-bit, 4k refresh, 1 Bank Module 4 pcs of 4M x 16 components HITACHI ADE-203-861 (Z) Preliminary, Rev. 0.0 Nov. 10, 1997 Description The HB56HW465DB is a 4 M x 64 Dynamic RAM Small Outline Dual In-line M emory M odule (S. 0 .

Contextual Info: Preliminary M53210400DW0/DB0 M53210410DW0/DB0 DRAM MODULE M53210400DW0/DB0 & M53210410DW0/DB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0D is a 4Mx32bits Dynamic RAM • Part Identification

Contextual Info: ESM T F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte

Contextual Info: Preliminary M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D

Contextual Info: Preliminary M53230400DW0/DB0 M53230410DW0/DB0 DRAM MODULE M53230400DW0/DB0 & M53230410DW0/DB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0D is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0D