4N38 MOTOROLA Search Results

4N38

Abstract: MOTOROLA 813 transistor 4N38A 730c-04
Contextual Info: MOTOROLA Order this document by 4N38/D SEMICONDUCTOR TECHNICAL DATA 4N38 4N38A* GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] *Motorola Preferred Device The 4N38 and 4N38A 1 devices consist of a gallium arsenide infrared

4n3b

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE GlobalOptolsolator UL f t . CSA ®®®® SETI SEMKO DEMKO NEMKQ BABT 6-Pin DIP Optoisolators TVansistor Output 4N38 4N38A* [CTR = 20% Min] 'Motorola Preferred Device The 4N38 and 4N38A 1 devices consist of a gallium arsenide infrared

Contextual Info: MOTOROLA SC D IO D ES/O PTO b4E D b 3 fc,7 2 5 S DOflhbSfl Efib MOTOROLA SEMICONDUCTOR TECHNICAL DATA & TO ca VDE UL C SA BS ® SEMKO SETI DEM KO NEMKO BABT 4N38 4N38A 6-Pin D IP O ptoisolators Transistor Output [CTR = 20% Min] STYLE 1 PLASTIC The 4N38 and 4N 38A devices consist of a gallium arsenide infrared em itting diode

MOTOROLA 813 transistor

Abstract: 4N38 4N38A 730C-04 4N38 MOTOROLA B/transistor ba 508
Contextual Info: MOTOROLA Order this document by 4N38/D SEMICONDUCTOR TECHNICAL DATA ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO 4N38 4N38A* BABT G lo b a l O p to is o la to r 6-Pin DIP Optoisolators Transistor Output [C TR = 20% Min] ’ M otorola Preferred Device The 4N 38 and 4 N 3 8 A 0 devices consist of a gallium arsenide infrared

Contextual Info: MOTOROLA Order this document by 4N38/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output 4N38 4N38A* [C TR = 20% Min] 'M o to ro la Preferred Device T h e 4 N 3 8 and 4 N 3 8 A 0 d e v ic e s c o n s is t o f a g a lliu m a rs e n id e in fra re d

4N38

Abstract: 4N38A VDE0160 VDE0832 VDE0833 motorola transistor 614
Contextual Info: MOTOROLA H SEM ICONDUCTOR TECHNICAL DATA 4N38 4N38A 6-Pin DIP Optoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • • • Convenient Plastic Dual-in-Line Package

CNY57A

Abstract: CNY62 sharp pc613 CNY63 CNY57 QTC 4N35 MOC7811 sensor MOC7811 QTC 4N25 hafo 3c63b
Contextual Info: Tem ic Semiconductors Cross Reference List Opto Corapetltwn-Type Isolators 3C63B 3C63C 3C91B 3C91C 3C92B 3C92C 3N243 3N244 3N245 3N281 4N25, 25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N33 4N35 4N37 4N38 CLA7 CLA7AA CNX21 ' CNX35 ; CNX36 CNX38 1CNX82 i CNX83

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N38 4N38A 6-Pin D IP O p to iso la to rs Transistor Output T h e se devices co n sist o f a galliu m arse nid e infrared em itting d iod e optically coupled to a m on olith ic silicon p ho to tran sistor detector. •

SO47

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA db TO Cfi VDE UL CSA SETI ® ® SEMKO DEMKO NEMKO BS BAST 4N38 4N38A 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] STYLE t PLASTIC T h e 4 N 3 8 a n d 4 N 3 8 A d e v ic e s c o n s is t o f a g a lliu m a r s e n id e in fr a r e d e m ittin g d io d e

motorola til111

Abstract: TIL112 H1101 A4N25A MOC1005 optocoupler MCT2E IC TIL 119 Optocoupler TIL157 H1102 7500
Contextual Info: OPTOELECTRONICS continued Style 1: An optocoupler consists of a gallium arsenide infrared emitting diode, IRED, optically coupled to a monolithic silicon photo­ detector/output device in a light-shielding package. Motorola of­ fers a wide array of standard devices in the popular 6-pin DIP

h11g1 case 730c-04

Abstract: 730D-05 730c-04 MOC3081 H11AV1 C8100 730A-04 H11L1 Case 730A-04 MOC3Q51
Contextual Info: Section 5 Optoisolators/Optocouplers Lead F orm T est O p tio n s .5-3 P ackage D im e n s io n s . 5-4 AC In p u t C o u p le r H11AA1

motorola til111

Abstract: TIL112 4N2S MOC1005 optocoupler H11A1 optocoupler MCT2E IC MCT2E TIL124 TIL126 4N27
Contextual Info: OPTOELECTRONICS continued Style 1: An optocoupler consists of a gallium arsenide infrared emitting diode, IRED, optically coupled to a monolithic silicon photo­ detector/output device in a light-shielding package. Motorola of­ fers a wide array of standard devices in the popular 6-pin DIP

optocoupler crossreference

Abstract: fairchild optocoupler cross reference MOC256 H11AA1M H11AA2M MOTOROLA Cross Reference Search H11L1M H11AA4M MOC3062M MOC3081M
Contextual Info: AC Input Phototransistor Small Outline Surface Mount Optocoupler MOC256 The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the

opto transistor moc

Abstract: MOCD211 H11AA1M MOCD211R2 D211 OPTO 4n33 4n25 H11AA4M MOC3081M 4N35M H11D1M
Contextual Info: Dual Channel Small Outline Optoisolators MOCD211 Transistor Output The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high

D223 OPTO

Abstract: darlington optocoupler cross reference MOCD217M H11AA2M MOC8204M H11AA4M H11G2M MOC3081M H11D1M 4N32M
Contextual Info: Dual Channel Small Outline Optoisolators MOCD223 Darlington Output The MOCD223 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline, plastic package. It is ideally

MOC223

Abstract: MOCD223M H11AA2M MOC 4N25 MOC223R2M H11AA4M MOC3062M MOC3081M 4N35M H11D1M
Contextual Info: Small Outline Optoisolators MOC223 Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density

mcp3021z

Abstract: P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler
Contextual Info: PHOTOCOUPLER CROSS REFERENCE For user’s convenience, the Sharp equivalents in comparison with the other m anufacturers’ products are suggested in this list. The data is prepared on the basis of main electrical and mechanical characteristics, however, Sharp assumes no responsibility for the actual use of the data and for the specifications of other

H1101

Abstract: H1102 TIL127 4N29 4N30 4N31 H11B255 H11B3 MCA230 MOC8111
Contextual Info: OPTOELECTRONICS — COUPLERS/ISOLATORS Style 1 : Pin 1. 2. 3. 4. 5. 6. continued CASE 730A-01 Anode Cathode NC Emitter Collector Base Style 3: Pin 1. 2. 3. 4. 5. 6. Anode Cathode NC Emitter Collector NC Transistor Output with No Base Connection — Style 3

H11D1M

Abstract: motorola 4n35 MOCD208-M 17434 MOTOROLA 813 transistor CNY17 pulse circuit H11AA4M H11G2M H11AV1M MOC8050M
Contextual Info: MOC8100 GlobalOptoisolator 6-Pin DIP Optoisolator Transistor Output The MOC8100 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. It is designed for applications requiring higher output collector current IC with lower input

p421 coupler

Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
Contextual Info: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety

216 OPTO SO8

Abstract: MOC216R1 motorola 4n35 Dual opto coupler IC SOIC 8 footprint MOC3052M MOC215/buy/GDZ4.3BD5 H11AA4M H11G2M MOC3081M
Contextual Info: Transistor Output Low Input Current These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density

H11D1M

Abstract: Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M
Contextual Info: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.

triac driver opto moc3021

Abstract: MOC3000 ic moc3041 C6550 driver circuit MCT2E A4N25A motorola til111 MOC3061 h11av1a 4n40 opto coupled scr
Contextual Info: MO TO R O L A SC -CDIODES/OPTO} 1SE D I L,3b755S D D Û D 0 D 1 Optoisolators T M \ - % S | 3 Case 730A-02 A n optoisolator con sists of a gallium arsenide infrared em itting diode, IRED, optically coupled to a m onolithic silic o n p h o to -d e te cto r in a lig h t -s h ie ld in g p ack age .

optocoupler spice model 4n38

Abstract: Burr Brown Databook opa548 audio amplifier schematics OPA548 AB-039 audio amplifier 50w 50v small signal transistor MOTOROLA DATABOOK 6030B OPA547 OPA548F
Contextual Info: OPA548 OPA 548 OPA 548 www.burr-brown.com/databook/OPA548.html High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● WIDE SUPPLY RANGE Single Supply: +8V to +60V Dual Supply: ±4V to ±30V ● HIGH OUTPUT CURRENT: 3A Continuous 5A Peak