50NA Search Results

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

2N5551

Contextual Info: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage

2N5401

Contextual Info: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V

DAC7512

Contextual Info: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V

marking code D3 SOT23-6 DAC

Abstract: d12n marking DAC7512 D12N DAC7512E DAC7512N
Contextual Info: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V

Contextual Info: WEITRON WSD420 Surface Mount Schottky Barrier Diodes Features: *Low Power Rectification *Small Surface Mounting Type *Low I R IR =50nA Typ *High Reliability Description: These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping,

2N3906V

Abstract: 2N3904V 1N916
Contextual Info: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current G A 1 H @VCE=30V, VEB=3V. D 2 : ICEX=50nA Max. , IBL=50nA(Max.) 3 K Excellent DC Current Gain Linearity.

KN2907A

Abstract: 2222a KN2222 KN2907
Contextual Info: SEMICONDUCTOR KN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

KN3903S

Abstract: KN3905S
Contextual Info: SEMICONDUCTOR KN3905S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-50mA, IB=-5mA. 3 G A 2 D : ICEX=-50nA(Max.) ; @VCE=-30V, VEB=-3V.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(Max.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage

DAC7512

Abstract: marking code 10 sot23 NATIONAL SEMICONDUCTOR MARKING CODE sot D12N DAC7512E DAC7512N D12e d12n marking
Contextual Info: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V

Contextual Info: UC1572 UC2572 UC3572 U N IT R O E 3E FEATURES DESCRIPTION • Simple Single Inductor Flyback PWM for Negative Voltage Generation • Drives External PMOS Switch • Contains UVLO Circuit • Includes Pulse-by-Pulse Current Limit • Low 50nA Sleep Mode Current

Operational Amplifiers SOT-23-5

Contextual Info: You are in Databook Vol. 3 • Click for Main Menu February 18, 1999 Operational Amplifier Selection Guide Description GBW Slew Rate MIC6211 High-Voltage Op Amp 2.5MHz 6V/µs 1.2mA 7mV 50nA MIC6251 GainBlock Amplifier 2MHz 6V/µs 1.3mA 14mV MIC6252 GainBlock™ Amplifier

Contextual Info: SEMICONDUCTOR 2N3904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage

Contextual Info: TOSHIBA YTS39Q6 Transistor Unit in mm Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , Ibev = 50nA (Max.) - @ VCE = -30V, VBE = -3V • Excellent DC Current Gain Linearity

2N3906U

Abstract: Scans-00124840
Contextual Info: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @VCe =-30V, V eb=-3V .

KN2907AS

Abstract: KN2907S KN2907S/2907AS
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : ICEx=-50nA Max. ; VCe=-30V, V eb=-0.5V. • Low Saturation Voltage : VCEfeat)=-0.4V(Max.) ; Ic=-150mA, IB=-15mA.

KN3903

Abstract: KN3905
Contextual Info: SEMICONDUCTOR KN3903 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌLow Leakage Current : ICEX=50nA Max. , @VCE=30V, VEB=3V. ᴌLow Saturation Voltage N E K : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.

1N916

Abstract: 2N2906E
Contextual Info: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity.

DAC7512

Abstract: dac interfacing with 8051 microcontroller marking 332 sot23-6 400H DAC7512E
Contextual Info: DAC7512 DAC 751 2 DAC 751 2 www.ti.com Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V ● GUARANTEED MONOTONIC BY DESIGN

DAC7512

Contextual Info: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V

DVM panel

Abstract: B 1383 digital display LTC2451 I2C interface
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1383 16-BIT DELTA SIGMA ADC WITH I2C INTERFACE LTC2451 DESCRIPTION Demonstration circuit 1383 features the LTC2451, a 16 bit high performance ∆Σ analog-to-digital converter ADC with an I2C interface. The input is bipolar with a range of Ref-to Ref+. The modulator’s proprietary sampling technique reduces the average input current to less than 50nA – orders of magnitude

Contextual Info: SE M IC O N D U C T O R 2N3904E TECHN ICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. r —7—-1 FEATURES • Low Leakage Current : ICEjj=50nA Max. , IBL=50nA(Max.) @Vce=30V, Veb=3V. D IM M IL L IM E T E R S A

Contextual Info: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V.