50X50X2M Search Results

2B4B41

Abstract: 4b41 2J4B41 2J4B J4B41 2G4B41
Contextual Info: SILICON DIFFUSED TYPE RECTIFIER STACK O SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS. • Average O utput Rectified C urrent : I o = 2.0A • Repetitive Peak Reverse Voltage : 2 B,G,J 4B41 = 100—600V POLARITY (-)» o( + ) (-)» O (-) M A X IM U M RATINGS SYMBOL

ic 301

Abstract: 2SD1535
Contextual Info: Power Transistors 2SD1535 b132fl52 001b7Sa MbO 2S D 1535 Package D im ensions Unit ; mm Silicon NPN Triple Diffused Planar Darlington Type High Power A m plifier • Features • • • • Very good linearity o f DC current gain Iiff High collector-base voltage (VCbo)

2SB0942

Abstract: 2SB0942A 2SD1267 2SD1267A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc

2SB1418

Abstract: 2SB1418A 2SD2138 2SD2138A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm 4.2±0.2 10.0±0.2 M Di ain sc te on na tin nc ue e/ d 1.0±0.2 • Absolute Maximum Ratings TC = 25°C

2SB0946

Abstract: 2SD1271
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB1299

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SB0944

Abstract: 2SD1269
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching 5.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 150 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0934 (2SB934) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For Power switching Complementary to 2SD1257 • Package • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1175 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1745 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 12.6±0.3 7.2±0.3 1.0±0.2 0.75±0.1 0.4±0.1

Contextual Info: TO SH IBA SM8G45,SM8J45,SM8G45A,SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : V d r m = 400, 600V R.M.S On-State Current : It RMS —8A

Contextual Info: Power Transistors 2SB952, 2SB952A 2SB952, 2SB952A Silicon PNP Epitaxial Planar Type Package Dimensions Unit ! mm Low Voltage Switching •i Features 3.7max. l.lmr—ax.* 8.? max. 6.5 max. • Low collector-eimitter saturation voltage VcEisau • High speed switching

Contextual Info: TO SHIBA SM8LZ47 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR <; m a i SILICON PLANAR TYPE a. 7 7 Unit in mm AC PO W ER CONTROL APPLICATIONS 10.3MAX. • Repetitive Peak Off-State Voltage V dRM • R.M.S. On-State Current i T RM S = • High Commutation (dv / dt)

2SB553

Contextual Info: TO SH IBA 2SB553 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB553 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 10.3MAX, Low Collector Saturation Voltage : v CE(sat)= —0.4V (Max.) at 1C= -4 A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm Parameter Collector-base voltage (Emitter open) 16.7±0.3 Symbol Rating Unit VCBO 350

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1749, 2SD1749A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 Symbol Rating Unit VCBO 60 V 2SD1749 2SD1749A 0.9±0.1 0˚ to 0.15˚

Contextual Info: Power Transistors 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071A 5.5±0.2 4.2±0.2 2.7±0.2 14.0±0.5 • Absolute Maximum Ratings TC = 25°C φ 3.1±0.1 Rating Unit Collector-base voltage Emitter open VCBO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0951 (2SB951), 2SB0951A (2SB951A) Silicon PNP epitaxial planar type darlington Unit: mm Collector-base voltage (Emitter open) Symbol Rating Unit VCBO −60 V 2SB0951 Collector-emitter voltage 2SB0951

2sb1750

Contextual Info: Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type darlington Unit : mm 7.0±0.3 3.0±0.2 2.0±0.2 2.5±0.2 1.0 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE • High-speed switching • I type package enabling direct soldering of the radiating fin to the

2sc3979

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB1418 and 2SB1418A 4.2±0.2 Unit: mm • Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching • Features 1.0±0.2 5.0±0.1 M Di ain sc te on na tin nc ue e/ d 2.5±0.1 13.0±0.2 • High-speed switching