5116100 Search Results

HY5116100B

Abstract: 10k52 1AD41-00-MAY95 1AD41
Contextual Info: -HYUNDAI 5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H 5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA 5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Contextual Info: b l E D • 4 ^ i , 2 0 3 H M 5116100 S e r i e s - 0 0 2 3 3 2 b O i l ■ H I T S HITACHI/ «-o ì i c / arrays / be * 16,777,216-w ord x 1 -b it D yn a m ic R andom A c c e s s M em ory The H itachi H M 5116100 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It

Contextual Info: SIEMENS 16 M X 1-Bit Dynamic RAM HYB 5116100AJ-50/-60/-70/-80 HYB 5116100ASJ-50/-60/-70/-80 Advanced Inform ation • 16 777 216 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version

Contextual Info: H M 5 1 1 6 1 0 0 L S e r i e s LowPower Version Product Preview 16,777,216-Word x 1-Bit Dynamic Random A c c e s s Memory • DESCRIPTION H M 5116100L J Series The Hitachi HM 5116100 is a C M O S dynamic RAM organized 16,777,216 words x 1-bit. It employs the most advanced C M O S technology lor high performance and

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

HY5116100B

Abstract: 1AD41-00-MAY95 HY5116100
Contextual Info: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 5116100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide

A9HA

Abstract: SA11
Contextual Info: O K I Semiconductor MSM5 1 16100 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116100 is a new generation dynamic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the M SM 5116100 is OKI's CMOS silicon gate process technology.

Contextual Info: 5116100 Series 16,777,216-word x 1-bit Dynamic RAM HITACHI ADE-203-646D Z Rev. 4.0 Jun. 24, 1997 Description The Hitachi HM 5116100 is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The 5116100 offers

Contextual Info: ADE-203-178B Z 5116100A Series 16,777,216-word x 1-bit Dynamic Random Access Memory H IT A C H I Nov2r 99: The Hitachi H M 5116100A is a CMOS dynamic R A M o rg an ized 1 6 ,7 7 7 ,2 1 6 -w o rd x 1-bit. It employs the most advanced CMOS technology for

Contextual Info: H M 5116100 S e r ie s - Preliminary 16,777,216-Word x 1-Bit Dynamic Random A c ce s s Memory • DESCRIPTION H M 5U 6100J Series T h e H itachi H M 5 1 16 10 0 is a C M O S dyn am ic R A M org an ized 16,777,216-w ord x 1-bit. It em ploys the m ost a d v a n ce d C M O S technolog y for high perform a n ce and

Contextual Info: bJE 1 • MMRbSDB QDS3b74 5 m HB56A169 Series ■HITS HI TA C H I / L O G I C / A R R A Y S / M E M — 1 6 ,7 7 7 ,2 1 6 -W o rd x 9 -B it H igh D e n s ity D y n a m ic R A M M o d u le T he H B 56A 169 is a 16 M x 9 dyn am ic RA M m o d u le , m o u n te d 9 p iec es o f 16-M bit D R A M

Contextual Info: Um i t 19 5 HM51161OOA Series 16,777,216-word x 1-blt Dynamic Random Access Memory Rev. 1 Jan. 31,1994 HITACHI The Hitachi 5116100A is a CMOS dynamic RAM organized 16,777,216 words x 1 bits. It employs the most advanced CMOS technology for high performance and low power. The

A5 GNC

Abstract: TSOP32-P-4QO-K 51V17400 5116100
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

Contextual Info: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

Contextual Info: 5116100 S e rie s - Preliminary 16,777,216-Word x 1-Bit Dynamic Random A c ce s s Memory • DESCRIPTION 5116100J Series The Hitachi 5116100 is a C M O S dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced C M O S technology for high performance and

z10-130

Abstract: HM5116100 Hitachi Scans-001
Contextual Info: 243 - 16M m £ ífc & WiEicBj rc TRAC CMOS D y n a m i c X i y ¿i- y y # ns) TRCY min (ns) TCAD min (ns) TAH rain (ns) TP rain (ns) RAM ( 1 6, m tt T*CY min (ns) TDH rain (ns) TRWC V D D or VC C (ns) (V) 7 7 7, m I DD max (mA) 216x1 ) A I DD STANDBY I SB/ I S82)

e33a

Contextual Info: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.

Contextual Info: HITACHI/ LOGIC/ARRAYS/ME 11 S1E D . I B 5116100L SGNGS MMTLic?[]3 DD1B677 743 • H I T S Product Preview Low Power Version 16,777,216-Word x 1-Blt Dynamic Random Access Memory ■ DESCRIPTION 5116100U Series The Hitachi 5116100 is a CMOS dynamic RAM organized 16,777,216 words x

Contextual Info: ADE-203-371 Z 5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory Preliminary Rev. 0.0 Mar. 23, 1994 HITACHI The Hitachi 5116100B is a CMOS dynamic RAM organized 16,777,216-w ord x 1-bit. It employs the most advanced CMOS technology for

flash 32 Pin PLCC 16mbit

Abstract: 398x
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Contextual Info: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1

Bv 42 transistor

Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
Contextual Info: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.