3118165 Search Results

SPT0305

Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Contextual Info: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

d8430

Abstract: 18165BSJ-60 BST60
Contextual Info: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-5Q/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time

SIEMENS BST

Abstract: SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L
Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

SIEMENS BST 68

Abstract: BST50 3118165 SIEMENS BST Q
Contextual Info: SIEM EN S 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

SIEMENS BST

Abstract: SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
Contextual Info: SIEMENS 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-50/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC

V53C318160A

Contextual Info: V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tPC) 35 ns 40 ns

V53C316165A

Contextual Info: V53C316165A 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

HYB3116165BSJ

Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

siemens 3ld 25

Abstract: TA5C HYB3116405BT
Contextual Info: r i E u r f t k c j i ç m ç r a j INFORMATION NOTE F o u rth G e n e r a t io n 16M - D R A M s C h a ra c te risa tio n D ata 3 .3 V p ro d u cts "f n c I r^ C J mftjT0M11.DOC SiEM ENS _ 3,3V lé M - D H A M s

Q67100-Q1192

Abstract: WL3 MARKING BST60
Contextual Info: HYB3116165BSJ/BST L -50/-60/-70 3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature

Contextual Info: M O S E L V IT E L IC V53C318165A 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Tim e, tp^c 50 ns 60 ns 70 ns Max. Column Address Access Time, ( t c ^ ) 25 ns 30 ns 35 ns Min. Extended Data O ut Page Mode Cycle Time, (tpc)

smd code marking wl5

Abstract: Q67100-Q1188 BST60
Contextual Info: HYB3116165BSJ/BST L -50/-60/-70 3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature

Contextual Info: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)

Contextual Info: M O S E L V IT E L IC V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tpj^c 50 ns 60 ns 70 ns Max. Column Address Access Time, (tcAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tpc) 35 ns

3165805AT-60

Abstract: Q67100
Contextual Info: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60

SIEMENS BST 68

Abstract: SIEMENS BST P 45 115 SIEMENS BST P SIEMENS BST t SIEMENS BST f 04 SIEMENS BST 5118165 SIEMENS BST Q SIEMENS BST N 35 SIEMENS BST G 03 60
Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 3118165BS J/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature

V53C516165A

Contextual Info: V53C516165A 5 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

Contextual Info: M O S E L V IT E L IC V53C318165A 3.3 VOLT 1M X 16 ED O P A G E M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tpj^c 50 ns 60 ns 70 ns Max. Column Address Access Time, (tcAA) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tpc)

V53C318165A

Contextual Info: V53C318165A 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)

HYB39S16400T

Abstract: hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
Contextual Info: SIEMENS 4M Product View 4M Product View 4M DRAM 1M X 4 4M X 1 256kX 16 HVB 314100BJ/BJL HYB 314400BJ/BJL HYB314405BJ/BJL HYB 314171BJ/BJL HYB 314175BJ/BJL HYB 514100BJ/BJL HYB 514400BJ/BJL HYB 514405BJ/BJL HYB 314265BJ/BJL HYB 514171 BJ/BJL HYB 514175BJ/BJL

5116165

Abstract: 5118165 EDO DRAM
Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 ÍR A C