5118165B Search Results

SPT0305

Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Contextual Info: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

Contextual Info: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )

Contextual Info: TOSHIBA THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The TH M 3210B5BS/BSG is a 1,048,576 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 2 pcs of TC 5118165BJ on the printed circuit board. This m odule is optimized for application to the systems which

5116 RAM

Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Contextual Info: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)

SIEMENS BST

Abstract: SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L
Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

SIEMENS BST 68

Abstract: BST50 3118165 SIEMENS BST Q
Contextual Info: SIEM EN S 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time

Contextual Info: 5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM 5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CM OS technology for high performance and low power. The 5118165B offers Extended

Contextual Info: ^ 7 2 4 0 TOSHIBA QQEÛ37B 54T 5118165BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT HYPER PAGE EDO DYNAMIC RAM in Description The T C 5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC 5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­

5116165

Abstract: 5118165 EDO DRAM
Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 ÍR A C

SOJ42

Contextual Info: SIEMENS HYM 321005S/GS-50/-60 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version Advanced Information * SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications * Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)

MSM5118165B

Abstract: TSOP 86 Package
Contextual Info: O K I Semiconductor 5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION 5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The 5118165B achieves high integration, high-speed operation, and low-power

HYB3116165BSJ

Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

Contextual Info: 2M x 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 Advanced Information • 2 097 152 words by 32-bit organization • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version)

faa11

Abstract: 5118165 d lt 7210
Contextual Info: SIEMENS 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 321005S/GS-50/-60 Advanced Inform ation • 1 048 576 w ords by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e (-50 version) 60 ns access tim e

5116 ram

Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature

Contextual Info: SIEMENS 2M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 Advanced Inform ation • 2 097 152 w ords by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e (-50 version) 60 ns access time

Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

Q67100-Q2066

Abstract: edo simm 20.32 mm
Contextual Info: SIEMENS 2M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 • SIMM modules with 2 097 152 words by 32-bit organization for PC main memory application • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)

Z1132

Contextual Info: 5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi 5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The 5118165B offers Extended

Q67100-Q2062

Contextual Info: 1M x 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 321005S/GS-50/-60 Advanced Information • SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)

5118165

Contextual Info: SIEMENS 1M x 64-Bit Dynamic RAM EDO Module HYM 641005GS-50/-60 168 pin buffered DIMM module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 1M x 64 organisation • Extended Data Out EDO • Performance: