512KW Search Results
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Kyocera AVX Components 700B512KW50XTVMLC A/B/R - Custom Tape W/Leader (Alt: 700B512KW50XTV) |
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700B512KW50XTV | Tape w/Leader | 24 Weeks | 500 |
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700B512KW50XTV |
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Kyocera AVX Components 100E512KW500XJ24MLC C/E/H - Bulk (Alt: 100E512KW500XJ24) |
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100E512KW500XJ24 | Bulk | 16 Weeks | 24 |
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100E512KW500XJ24 |
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Kyocera AVX Components 100E512KWN500XJ24MLC C/E/H - Bulk (Alt: 100E512KWN500XJ24) |
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100E512KWN500XJ24 | Bulk | 18 Weeks | 24 |
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100E512KWN500XJ24 |
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Kyocera AVX Components 700B512KWN50XC100MLC A/B/R - Waffle Pack (Alt: 700B512KWN50XC100) |
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700B512KWN50XC100 | Waffle Pack | 26 Weeks | 100 |
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700B512KWN50XC100 |
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Kyocera AVX Components 700B512KW50XTMLC A/B/R - Bulk (Alt: 700B512KW50XT) |
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700B512KW50XT | Bulk | 24 Weeks | 500 |
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512KW Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
32C408BRP-20
Abstract: 32C408BRP-25 32C408BRP-30 512KWORD F3601 32c49
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512kword32c408brp99rev332c408brp-20+4 | |
SL821Contextual Info: HB66A2561 6C-25 524,288W ordX8bit /2 6 2 ,144W o rd X 16bit High Density CM OS Static RAM Card H IT A C H I Rev.o sep.10,1992 The HB66A25616C-25 is a high density 512kWord X 8bit or 256kWord X 16bit static RAM Card, mounted of 4pieces 1M static RAM sealed in TSOP package. |
OCR Scan |
hb66a25616c-2516bithb66a25616c-25+4 | |
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Contextual Info: H B 6 6 A 2 5 6 1 6 C A -2 5 5 2 4 ,2 8 8 W o rd X 8b it /2 6 2 ,1 4 4 W o rd X 1 6 b it High Density C M O S Static RAM Card Rev.O H IT A C H I sep.10,1992 The HB66A25616CA-25 is a high density 512kWordX 8bit or 256kWordX 16bit static RAM Card, mounted of 4pieces 1M static RAM sealed in TSOP package. |
OCR Scan |
hb66a25616ca-25512kwordx256kwordx16bit+2 | |
72ZZZZ
Abstract: K777
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OCR Scan |
576wordx8bit288wordx16bithb66a51216ca-25512kword+5 | |
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Contextual Info: 512KW B molate MSX0029-10/12/15 Issue dated 02/15/89 Sem iconductor Pin Definition 524,288 x 8 CMOS High Speed Static RAM NC Vee WE D2 D3 DO A1 A2 A3 A4 GND OS A10 A ll AS A13 A14 NC CS A1S A16 A12 A1S AS 01 GNO A0 A7 AS A9 D7 04 06 A17 Voc T5E Features Fast Access Times of 100/120/150 |
OCR Scan |
512kwmsx0029-10/12/15afra14330ua | |
32C408BRP-20
Abstract: 32C408BRP-25 32C408BRP-30 F3601 32c49
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512kword32c408brp36ldfpf36-01+6 | |
HM628512C
Abstract: HM628512CLFP-5SL HM628512CLFP-7 HM628512CLP-5SL HM628512CLP-7 HM628512CLRR-5SL HM628512CLRR-7 HM628512CLTT-5SL HM628512CLTT-7 Hitachi DSA00207
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hm628512c512-kwordade-203-1212c512-kw+12 | |
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Contextual Info: TMS320F28377D, TMS320F28376D www.ti.com SPRS880 – DECEMBER 2013 TMS320F2837xD Dual-Core Delfino Microcontrollers Check for Samples: TMS320F28377D, TMS320F28376D 1 TMS320F2837xD Dual-Core Delfino MCUs 1.1 Features • Dual-Core Architecture – Two TMS320C28x™ 32-Bit CPUs |
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tms320f28377dtms320f28376dsprs880tms320f2837xd+2 | |
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Contextual Info: TMS320VC5421 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS098D December 1999 − Revised October 2008 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments |
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tms320vc5421sprs098dsprs098c | |
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Contextual Info: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905C (Z) Rev. 2.0 Jan. 29, 1999 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (J,m Hi-CMOS process technology. |
OCR Scan |
hm62v8512b512-kwordade-203-905c525-mil+1 | |
117 dram hen nth
Abstract: aaeh marking ccs ldl LH28F800BGHB-BL85 LH28F800BG
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OCR Scan |
lhf80b23aa2034csp8008tcm-rh+6 | |
CXD1167
Abstract: cxd1167q CXD1130Q 63B23 sony cxd1167q CXD1125q CXD1135Q CXD1135 CX025 cxd1130
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OCR Scan |
cxd1808aq8688mhz3fl23fl3qlb053+13 | |
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Contextual Info: RMLV0408E Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0206EJ0100 Rev.1.00 2014.2.27 Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher |
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rmlv0408e512-kwordr10ds0206ej0100288-word+1 | |
R1LV0408D
Abstract: R1LV0408DSB-7L R1LV0408DSA
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r1lv0408d512-kwordrej03c0310-010032-pin+3 | |
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HM6216514I
Abstract: HM6216514LTTI-5SL HM6216514LTTI-5
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hm6216514ihm6216514ltti-5slhm6216514ltti-5 | |
MB86860
Abstract: 0x80000410 bit3113 SCSN1 sparclite hypersparc BIT3115 S200 SS200 SAD-100
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mb8686032-bit600us0x80000410+8 | |
HM628512C
Abstract: HM628512CLFP-5SL HM628512CLFP-7 HM628512CLP-5SL HM628512CLP-7 HM628512CLRR-5SL HM628512CLRR-7 HM628512CLTT-5SL HM628512CLTT-7
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hm628512chm628512clfp-5slhm628512clfp-7hm628512clp-5sl+5 | |
A17a
Abstract: HM62W8512B HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W8512BLFP-5UL HM62W8512BLFP-7 HM62W8512BLFP-7SL HM62W8512BLFP-7UL HM62W8512BLTT-5
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a17ahm62w8512bhm62w8512blfp-5hm62w8512blfp-5sl+5 | |
HM62G18512ABP-30
Abstract: HM62G18512ABP-33 HM62G18512ABP-40 SA10 SA13 SA14 SA18 SA283A
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hm62g18512abp-30hm62g18512abp-33hm62g18512abp-40sa10+4 | |
HM62W8511HCJP-12
Abstract: HM62W8511HC HM62W8511HCJP-10 HM62W8511HCLJP-10 HM62W8511HCLJP-12 HM62W8511CJP HM62W8511CJP10
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d-85622d-85619hm62w8511hcjp-12hm62w8511hc+5 | |
LH28F800BJHB-PTTL10
Abstract: FC004 ap007 7D002
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Original |
x8/x16lh28f800bjhb-pttl10lhf80j24ap-001-sd-e+5 | |
MR27T802FContextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008. |
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mr27t802f | |
MR27V802FContextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008. |
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mr27v802f | |
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Contextual Info: HM628512BI Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-935A (Z) Preliminary, Rev. 0.1 Dec. 14, 1998 Description The Hitachi HM 628512BI is a 4-M bit static RAM organized 512-kword x 8-bit. It realizes higher density, higher perform ance and low pow er consumption by employing 0.35 ( A m Hi-CMOS process technology. |
OCR Scan |
hm628512bi512-kwordade-203-935a628512bi+4 | |