330UA Search Results

Contextual Info: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: DTC124G series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC 100mA R 22kΩ UMT3 SMT3 50V DTC124GUA SOT-323(SC-70) DTC124GKA SOT-346(SC-59)

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: TM TMP431 TMP432 P432 www.ti.com SBOS441F – SEPTEMBER 2009 – REVISED AUGUST 2013 ±1°C Temperature Sensor with Series-R, η-Factor, and Automatic Beta Compensation Check for Samples: TMP431, TMP432 FEATURES DESCRIPTION • • • • • • • The TMP431 and TMP432 are remote temperature

MOSAIC SEMICONDUCTOR

Abstract: CD731
Contextual Info: molate MSX0029-10/12/15 Issue dated 02/15/89 Semiconductor Pin Definition 524,288 x 8 CMOS High Speed Static RAM Features Fast Access Times of 100/120/150 Low Power Standby 68 mW typ. 160 uW (typ.) - LP Low Power Operation 108 mW at 1MHz Completely Static Operation

Contextual Info: MCP41HVX1 Typical Performance Curves 1.0 TYPICAL PERFORMANCE CURVES Note: The following performance graphs are for the devices that are documented in the MCP41HVX1 data sheet DS20005207 . This document allows the MCP41HVX1 data sheet’s functional description to be in PDF

WM8352GEB/V

Abstract: IR SENSOR to detect heartbeat rate wm8350 datasheet 3528 pwm 20 PINS electret condenser microphone element NTC 1K li 102 r144 085 000 WM8352 J-STD-020B R170
Contextual Info: w WM8352 Wolfson AudioPlus Stereo CODEC with Power Management DESCRIPTION FEATURES The WM8352 is an integrated audio and power management subsystem which provides a cost effective, single-chip solution for portable audio and multimedia systems. Stereo Hi-Fi CODEC

Contextual Info: w WM8351 Wolfson AudioPlus Stereo CODEC with Power Management DESCRIPTION FEATURES The WM8351 is an integrated audio and power management subsystem which provides a cost effective, single-chip solution for portable audio and multimedia systems. Stereo Hi-Fi CODEC

WM8351

Abstract: J-STD-020B pwm 1.4A 100hz 24v Date Code Formats wolfson
Contextual Info: w WM8351 Wolfson AudioPlus Stereo CODEC with Power Management DESCRIPTION FEATURES The WM8351 is an integrated audio and power management subsystem which provides a cost effective, single-chip solution for portable audio and multimedia systems. Stereo Hi-Fi CODEC

strain gauge amplifier schematic

Abstract: PKGS MURATA shock sensor amplifier sg sot23 DFN10 LTC6081MS8 Omega K-type thermocouple shock sensor LTC6078/LTC6079
Contextual Info: LTC6081/LTC6082 Precision Dual/Quad CMOS Rail-to-Rail Input/ Output Amplifiers DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Maximum Offset Voltage: 70 V 25°C Maximum Offset Drift: 0.8μV/°C Maximum Input Bias: 1pA (25°C) 40pA (TA ≤ 85°C)

FM23MLD16

Abstract: 3.3v 1Mx8 static ram high speed
Contextual Info: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16  Configurable as 1Mx8 Using /UB, /LB  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz

MDT10F630

Abstract: MDT10F630P11 MDT10F630P13 MDT10F630S11
Contextual Info: MDT10F630 automotive 1. General Description to low transmitters/receivers, power pointing remote devices, and This 8-bit Micro-controller uses a fully static telecommunications processors, such as Remote CMOS technology to achieve high speed, small controller,

mdt10p621

Contextual Info: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high

Contextual Info: MDT10P72N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high

MDT10P62

Abstract: MDT10P
Contextual Info: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and

20MHZ

Abstract: 100nnn
Contextual Info: MDT10P621N AB 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断

MDT10P72

Abstract: DC MOTOR SPEED CONTROLLER
Contextual Info: MDT10P72 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high

MDT10P721

Abstract: 20MHZ
Contextual Info: MDT10P721 BB 1. 概述 －A／D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断

Contextual Info: MDT10P62N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and

MDT10P621

Abstract: MDT10P
Contextual Info: MDT10P621 BB -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip

20MHZ

Abstract: MDT10P62 MDT10P
Contextual Info: MDT10P62 BB .1. 概述 －CCP，SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟／记数器

RTH10

Abstract: RT-H10
Contextual Info: TM TMP431 TMP432 P432 SBOS441C – SEPTEMBER 2009 – REVISED FEBRUARY 2011 www.ti.com ±1°C TEMPERATURE SENSOR with Series-R, η-Factor, and Automatic Beta Compensation Check for Samples: TMP431, TMP432 FEATURES DESCRIPTION • • • • • • • The TMP431 and TMP432 are remote temperature