512MB DDP Search Results

512MB ddp

Abstract: 64MX8 256Mb SO-DIMM 512MB
Contextual Info: 512MB 64Mx64 SODIMM Solution Samsung’s proposal is DDP 512Mb based 512MB SODIMM!! Solution I Solution II Based Component Mono 512Mb DDP 512Mb Stacked 512Mb Package Type TSOP2 TSOP2 Stacked TSOP2 No. of Dies 8pcs 16pcs of 256Mb 16pcs of 256Mb 32Mx16, one /CS 64Mx8, two /CS

KFG8GH6U4M

Abstract: KFM8GH6Q4M KFG8G16Q4M-DEB6 16gb 005DH KFG8GH6Q4M KFM8G16Q4M KFG1216U2B-DIB6 kfg8gh6u4m-deb6 oneNand flash
Contextual Info: Device ID Data of OneNAND Flash 2007.08 Product Density Voltage Interface 1.8V 512Mb A-die 512Mb Demux 3.3V 1.8V 1Gb Mono 1Gb M-die 2Gb DDP 1.8V 4Gb QDP 1Gb Mono 1Gb A-die 2Gb DDP 1.8V 4Gb QDP Mux Demux Mux Demux Mux Demux Demux Mux Demux Mux Demux 1.8V 512Mb B-die

Contextual Info: 256MB, 512MB, 1GB x72, ECC, SR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM (RDIMM) MT9HTF3272(P) – 256MB MT9HTF6472(P) – 512MB MT9HTF12872 (P) – 1GB For the latest data sheet and for component data sheets, refer to Micron's Web site: www.micron.com/products/ddr2

micron DDR2 184-pin

Contextual Info: 512MB, 1GB, 2GB x72, ECC, SR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM (RDIMM) MT18HTF6472(P) – 512MB MT18HTF12872(P) – 1GB MT18HTF25672 (P) – 2GB For the latest data sheet and for component data sheets, refer to Micron's Web site: www.micron.com/products/ddr2

Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based Registered DDR2

HYMP125R72MP4-E3

Abstract: HYMP512R72P4-E3 dm 533 DDR2-400 DDR2-533 BA 758
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based Registered DDR2

Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based

Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based

HYMP564S64P6-E3

Abstract: DDR2-400
Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based

Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based

128Mbx64

Abstract: HYMP564S64P6 HYMP564S64P6-E3 DDR2-400
Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based

VR5Wx567218GBW

Abstract: S-108 PC2-3200 PC2-5300 PC2-6400 80 pin miniDIMM minidimm 256Mx
Contextual Info: DDR2 ECC REGISTERED VERY LOW PROFILE MINI-DIMM 512MB ~ 2GB MODULE CONFIGURATIONS V/I Part Number VR5Wx647218EBP VR5Wx647218EBS VR5Wx647218EBW VR5Wx647218EBY VR5Wx647218EBZ VR5Wx287218FBP VR5Wx287218FBS VR5Wx287218FBW VR5Wx287218FBY VR5Wx287218FBZ VR5Wx567218GBP

Contextual Info: SM572648578DDBS01 June 24, 2002 Orderable Part Numbers Part Numbers SM572648578DDBS01 Description 64Mx72 512MB , SDRAM 144-pin SODIMM, Unbuffered, ECC, 64Mx8 Based, PC133, CL = 2 & 3, 36.32mm Revision History • June 24, 2002 Modified the value of capacitance for DDP device.

Contextual Info: M470L6423CK0 200pin DDR SDRAM SODIMM 512MB DDR SDRAM MODULE 64Mx64 based on DDP 64Mx 8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.2 Jan. 2002 Rev. 0.2 Jan. 2002 M470L6423CK0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (August 2001)

DDR200

Abstract: DDR266A DDR266B
Contextual Info: M470L6423CK0 200pin DDR SDRAM SODIMM 512MB DDR SDRAM MODULE 64Mx64 based on DDP 64Mx 8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.2 Jan. 2002 Rev. 0.2 Jan. 2002 200pin DDR SDRAM SODIMM M470L6423CK0 Revision History Revision 0.0 (August 2001)

Contextual Info: M470L6423CK0 200pin DDR SDRAM SODIMM 512MB DDR SDRAM MODULE 64Mx64 based on DDP 64Mx 8 DDR SDRAM 200pin SODIMM 64bit Non-ECC/Parity Revision 0.0 Aug. 2001 Rev. 0.0 Aug. 2001 M470L6423CK0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (August 2001)

WED3DG7265V-D1

Contextual Info: WED3DG7265V-D1 512MB- 64Mx72 SDRAM, UNBUFFERED W/PLL FEATURES DESCRIPTION n Burst Mode Operation The WED3DG7265V is a 64Mx72 synchronous DRAM module which consists of nine 64Mx8 DDP SDRAM components in TSOP- 11 package, and one 2K EEPROM in an 8- pin TSSOP

samsung toggle mode NAND

Contextual Info: MuxOneNAND512 KFM1216Q2A-DEB5 FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB5) 1.0 FLASH MEMORY

samsung toggle mode NAND

Contextual Info: MuxOneNAND512 KFM1216Q2A-DEB5 FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) Temperature PKG 512Mb KFM1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND512(KFM1216Q2A-DEB5) 1.0 FLASH MEMORY

512MB NOR FLASH

Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH
Contextual Info: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB5 3.3V(2.7V~3.6V) Industrial

KFG1216x2A-xxB5

Abstract: 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report 63FBGA KFG1216D2A KFG1216Q2A KFG1216U2A
Contextual Info: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial

NT6SM32M16AG-S1

Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb
Contextual Info: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of  Marking VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed

Lpddr2 Idd7

Abstract: COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32
Contextual Info: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed

Contextual Info: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB6 2.65V(2.4V~2.9V) Extended