513 S12 Search Results

A2310

Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 513 Series Features Description Pin Configuration • Frequency Range: 5 to 500␣MHz The 513 Series is a thin-film bipolar RF amplifier that uses resistive feedback and active bias

A2310

Contextual Info: Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 513 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz The 513 Series is a thin-film bipolar RF amplifier that uses resistive feedback and active bias to provide temperature compensation and increased immunity to

to8 g1s

Abstract: transistor 9567
Contextual Info: Q avan tek UTO/UTC 513 Series Thin-Film Cascadable Amplifier 5 to 500 MHz FEATURES APPLICATIONS • Frequency Range: 5 to 500 MHz • Medium Power Output: +16 dBm Typ • Medium Gain: 17 dB (Typ) • Temperature Compensated • 24-Volt Supply • IF/RF Amplification

lead acid batteries exide

Abstract: NGSO1206D6HS0SA NGSO120230HS0CA NGS6021200HS0FA NGSB060330HS0CA NGSO120060HS0CA NGS6020300HS0FA NGS6020240HS0FA NGSB120130HS0CA NGS6021400HS0FA
Contextual Info: Industrial Batteries – Network Power Sonnenschein Solar Safe storage capacity for renewable energy. Specifications The compact alternative for smaller solar applications. Sonnenschein Solar batteries are specially designed for small to medium performance requirements in

Contextual Info: d 8/92 i - - _ ^O nU EH R 0 -7 V - /3 - 5 / 2225-KMartin Avenue, Santa Clara, CA 95050 408 492-1400 FAX (408) 492-1500 CO M PO NENTS 10 to 1000 MHz TO-8 Cascadable Amplifier AC1037 (Typical Values) High Reverse Isolation .

BU9716AK

Abstract: 05-A022 513 s12
Contextual Info: Standard ICs Picture cell driver for STN LCD driver BU9716AK/BU9716AKV The BU9716AK and BU9716AKV are man-machine interface ICs designed for applications such as multi-media portable terminals. Specifically. these products are used as driver ICs for operating mode display LCD panels in portable terminals,

1683

Contextual Info: PIN 1 2 COMI 3 / / COM2 5 6 7 a 9 10 11 12 13 IF 1A 2F 2A 56 3F 3A 4F 4A 1G IB 2G 2B S5 30 3B 4G 4B IE 1C 2E 2C S4 3E 3C 4£ 4C SI ID S3 2D S2 S7 3D S9 40 26 COM2 COM3 COM4 4 COMI COM3 COM4 PIN 14 15 16 17 IS 19 2D 21 22 23 24 25 COMI SS S16 5F 5A 6F 6A 539

a-2896

Abstract: HCS12
Contextual Info: DOCUMENT NUMBER S12IICV2/D HCS12 Inter-Integrated Circuit IIC Block Guide V02.08 Original Release Date: 08 SEP 1999 Revised: Jun 3, 2004 8/16 Bit Division,TSPG Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its

HCS12

Contextual Info: DOCUMENT NUMBER S12IICV2/D HCS12 Inter-Integrated Circuit IIC Block Guide V02.07 Original Release Date: 08 SEP 1999 Revised: Apr 11, 2003 8/16 Bit Division,TSPG Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its

hp laptop display LVDS connector pins

Abstract: LVDS-008 hp laptop display LVDS connector pins datasheet milford lcd displaylink HP 30 pin lcd flex cable pinout laptop display LVDS connector pins laptop display LVDS connector pins datasheet 10G BERT GETEK FR4
Contextual Info: Table of contents Chapter 1 - Introduction to LVDS 1.1 The trend to LVDS 1-1 1.2 Getting speed with low noise and low power 1-1 1.3 LVDS ICs 1-4 1.4 Bus LVDS 1-4 1.5 LVDS applications 1-5 Chapter 2 - Using LVDS 2.1 Why low swing differential? 2-1 2.2 An economical interface – save money, too

FSX017LG/001-E1

Abstract: FSX017LG
Contextual Info: FSXOl 7LG G en eral Purpose Ga As F E i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS -5 V Total Power Dissipation Ptot 220 mW Storage Temperature Tstg -65 to +175

HCS12

Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12IICV2/D Freescale Semiconductor, Inc. HCS12 Inter-Integrated Circuit IIC Block Guide V02.08 Original Release Date: 08 SEP 1999 Revised: Jun 3, 2004 8/16 Bit Division,TSPG Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its

Contextual Info: FLLIOIME L-Bcind Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs •5 V 4.16 w Total Power Dissipation Pt Tc = 25°C Storage Temperature

FLC081xp

Abstract: FLC081
Contextual Info: FLC081XP GaA s F E T and H E M Ï Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current >DSS Test Conditions VDS = 5V, Vos = 0V Min. - Limit Typ. Max. 300 450 Unit mA Transconductance 9m Vqs = 5V, IQS = 200mA

TFK U 3212 M

Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Contextual Info: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro ­ electro n ic G m bH K ruppstrasse 6

GaAs FETs

Contextual Info: FLM7177-12DA Internally Matched Power iaAs F E l s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 57.6 w Total Power Dissipation Tc = 25°C pt Storage Temperature

9536XL

Abstract: HW-133 HW-133-VQ64 A2 5160 64-pin VQFP xc9572xl TTL-45 ISA-96
Contextual Info: A1 D3ÍA11 A2 D2 A1D) A3 Dlf A9Ì TTL9 A4 DO(AB) AID6 A5 TTLO TTL3 TTL6 P1 P1 P1 S I—24S1-22 GND B2 D6(D1) S1-35 TTL5 C2 B3 TTL8 C3 TTL10 B4 TTL11 C4 TTL12 B5 TTL13 C5 TTL15 C6 TTL16 C7 T TL7 S I—19 D4ÍA12) TTL2 T T L4 S1-20 B1 S1-25 TTL1 AID5 A6 TTL14

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

PC MOTHERBOARD CIRCUIT diagram

Abstract: Ericsson AXD 311 Manual motherboard test points BT 342 project mobile MOTHERBOARD CIRCUIT diagram bluetooth development board schematic free circuit diagram of motherboard 0190A MOTHERBOARD CIRCUIT diagram PC MOTHERBOARD CIRCUIT diagram download free
Contextual Info: EBCP RoseRed Bluetooth Development Platform User Guide Copyright 2002 ARM Limited. All rights reserved. ARM DUI 0190A EBCP RoseRed Bluetooth Development Platform User Guide Copyright © 2002 ARM Limited. All rights reserved. Release Information Change history

PC MOTHERBOARD CIRCUIT diagram

Abstract: motherboard test points Ericsson AXD 311 Manual ARM JTAG Programmer Schematics bluetooth development board schematic circuit diagram of motherboard pc motherboard schematics free circuit diagram of motherboard how to build a motherboard BT 342 project
Contextual Info: Bluetooth Development Platform User Guide Copyright 2000-2001 ARM Limited. All rights reserved. ARM DUI 0135D Bluetooth Development Platform User Guide Copyright © 2000-2001 ARM Limited. All rights reserved. Release Information Change history Date Issue

ARM Architecture Reference Manual

Abstract: ARM1020E VFP10 ARM10 CP15 IEEE754 5-101 opa 232 IEEE-754 ARM10200E ufc 101
Contextual Info: VFP10 Vector Floating-point Coprocessor Rev 1 Technical Reference Manual Copyright 2001 ARM Limited. All rights reserved. ARM DDI 0178B VFP10™ Vector Floating-point Coprocessor Technical Reference Manual Copyright © 2001 ARM Limited. All rights reserved.

FLM7177-12DA

Contextual Info: FLM7177-12DA r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q

FLL101ME

Abstract: FLL101
Contextual Info: FLL101ME L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P1dB=29.5dBm Typ. High Gain: G1dB=13.5dB (Typ.) High PAE: hadd=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL101ME is a Power GaAs FET that is specifically designed to

FSX017L

Abstract: S12MAG Eudyna Devices X BAND power amplifiers
Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION