AND8381
Abstract: No abstract text available
Text: AND8381/D SOT-963 527AD Dual MOSFET Package Board Level Application and Thermal Performance http://onsemi.com Prepared by: Anthony M. Volpe APPLICATION NOTE ON Semiconductor INTRODUCTION and aforementioned vias is shown in Figure 3 of the subsequent section.
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AND8381/D
OT-963
527AD
AND8381
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019REF
Abstract: a3he
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE E DATE 09 FEB 2010 SCALE 4:1 X Y D 6 5 4 1 2 3 A HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
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OT-963
527AD-01
527AD
019REF
a3he
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Untitled
Abstract: No abstract text available
Text: MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5311DW1,
NSBC114EPDXV6,
NSBC114EPDP6
DTC114EP/D
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Untitled
Abstract: No abstract text available
Text: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963
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NST3946DP6T5G
NST3946DP6T5G
23/SOTâ
323/SOTâ
NST3946DP6/D
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Untitled
Abstract: No abstract text available
Text: MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5211DW1,
NSBC114EDXV6,
NSBC114EDP6
DTC114ED/D
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NSBC144WPDP6
Abstract: No abstract text available
Text: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSBC114EPDP6T5G
NSBC114EPDP6T5G
NSBC114EPDP6/D
NSBC144WPDP6
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sot963
Abstract: NSBA123TDP6
Text: NSBA123TDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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NSBA123TDP6
DTA123TD/D
sot963
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Untitled
Abstract: No abstract text available
Text: MUN5133DW1, NSBA143ZDXV6, NSBA143ZDP6 Dual PNP Bias Resistor Transistors R1 = 4.7 kW, R2 = 47 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single
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MUN5133DW1,
NSBA143ZDXV6,
NSBA143ZDP6
DTA143ZD/D
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Untitled
Abstract: No abstract text available
Text: MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6 Dual NPN Bias Resistor Transistors R1 = 4.7 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5233DW1,
NSBC143ZDXV6,
NSBC143ZDP6
DTC143ZD/D
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ESD5205P6T6G
Abstract: No abstract text available
Text: ESD5205 Transient Voltage Suppressors Low Capacitance ESD Protection Diode for High Speed Data Line http://onsemi.com The ESD5205 transient voltage suppressor is designed to protect high speed data lines from ESD. Low capacitance and low ESD clamping voltage make this device an ideal solution for protecting
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ESD5205
OT-963
527AD
ESD5205/D
ESD5205P6T6G
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Untitled
Abstract: No abstract text available
Text: NSBC123TPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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NSBC123TPDP6
DTC123TP/D
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SMUN5311DW1T3G
Abstract: NSBC114EPDP6T5G
Text: MUN5311DW1, SMUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
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MUN5311DW1,
SMUN5311DW1,
NSBC114EPDXV6,
NSBC114EPDP6
DTC114EP/D
SMUN5311DW1T3G
NSBC114EPDP6T5G
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Untitled
Abstract: No abstract text available
Text: MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors R1 = 10 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5214DW1,
NSBC114YDXV6,
NSBC114YDP6
DTC114YD/D
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306 marking code transistor
Abstract: No abstract text available
Text: MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5335DW1,
NSBC123JPDXV6,
NSBC123JPDP6
DTC123JP/D
306 marking code transistor
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Untitled
Abstract: No abstract text available
Text: MUN5213DW1, NSBC144EDXV6, NSBC144EDP6 Dual NPN Bias Resistor Transistors R1 = 47 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5213DW1,
NSBC144EDXV6,
NSBC144EDP6
DTC144ED/D
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Untitled
Abstract: No abstract text available
Text: MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 Dual PNP Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5137DW1,
NSBA144WDXV6,
NSBA144WDP6
DTA144WD/D
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Untitled
Abstract: No abstract text available
Text: NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963
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NST847BPDP6T5G
NST847BPDP6T5G
23/SOTâ
323/SOTâ
NST847BPDP6T5G*
NST847BPDP6/D
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Untitled
Abstract: No abstract text available
Text: MUN5137DW1, NSBA144WDXV6, NSBA144WDP6 Dual PNP Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5137DW1,
NSBA144WDXV6,
NSBA144WDP6
DTA144WD/D
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463A
Abstract: NSBC143EDXV6
Text: MUN5232DW1, NSBC143EDXV6, NSBC143EDP6 Dual NPN Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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MUN5232DW1,
NSBC143EDXV6,
NSBC143EDP6
DTC143ED/D
463A
NSBC143EDXV6
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sot963
Abstract: No abstract text available
Text: NSBC115TDP6 Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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NSBC115TDP6
DTC115TD/D
sot963
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NSBC114EDP6T5G
Abstract: NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 527AD NSBC124EDP6 NSBC144WDP6
Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor
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NSBC114EDP6T5G
OT-963
NSBC114EDP6/D
NSBC114YDP6T5G
NSBC123TDP6T5G
NSBC124EDP6T5G
NSBC143EDP6T5G
NSBC143ZDP6T5G
NSBC144EDP6T5G
527AD
NSBC124EDP6
NSBC144WDP6
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NSBA114EDP6T5G
Abstract: NSBA114YDP6T5G NSBA123TDP6T5G NSBA124EDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA144EDP6T5G 527AD
Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor
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NSBA114EDP6T5G
OT-963
NSBA114EDP6/D
NSBA114YDP6T5G
NSBA123TDP6T5G
NSBA124EDP6T5G
NSBA143EDP6T5G
NSBA143ZDP6T5G
NSBA144EDP6T5G
527AD
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NTUD3171PZT5G
Abstract: 527AD
Text: NTUD3171PZ Small Signal MOSFET −20 V, −200 mA, Dual P−Channel, 1.0 x 1.0 mm SOT−963 Package Features • Dual P−Channel MOSFET • Offers a Low RDS on Solution in the Ultra Small 1.0 x 1.0 mm • • • Package 1.5 V Gate Voltage Rating Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
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NTUD3171PZ
OT-963
NTUD3171PZ/D
NTUD3171PZT5G
527AD
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Untitled
Abstract: No abstract text available
Text: NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in
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NST3906DP6T5G
NST3906DP6T5G
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323/SOTâ
NST3906DP6/D
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