52B DIODE Search Results

52B DIODE Result Highlights (5)

Part	Manufacturer	Description
CEZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, ESC
CUZ8V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 8.2 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM
CEZ6V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, ESC

52B DIODE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10N03 Abstract: 06N03 14N03 04N03 VU02 VU020-10N03 12n03 16N03 Contextual Info: 4b E D i x • 4b f l b 52b 00012S 1 y s corp □IXYS b » I X Y -r * 7. V o * ‘ November 1991 Data Sheet No. 911002A Three-Phase Diode Rectifier Bridge VU020 FEATURES:_ Isolated Direct Copper Bond Base Plate Easy Chassis Mounting	OCR Scan	00012S 11002A E72873M) VU020 VU020-04N03 VU020-06N03 VU020-08N03 VU020-10N03 VU020-12N03 VU020-14N03 10N03 06N03 14N03 04N03 VU02 12n03 16N03	PDF
Contextual Info: N AUER PHILIPS/DISCRETE b^E D bbsa^ai DD3oa4a 52b Philips Sem iconductors Product Specification PowerM OS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope	OCR Scan	OT223 BUK582-60A OT223.	PDF
BUK582-60A Contextual Info: bTE T> m N AMER PHILIPS/DISCRETE 1^53^31 DD30flM2 52b • APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount	OCR Scan	0G3Dfl42 BUK582-60A OT223 bbS3131- BUK582-60A OT223. 35\im	PDF
SUR50N03-09P Contextual Info: SUR50N03-09P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS	Original	SUR50N03-09P O-252 SUR50N03-09P--E3 SUR50N03-09P-T4--E3 18-Jul-08 SUR50N03-09P	PDF
SUU50N03-09P Contextual Info: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters	Original	SUU50N03-09P O-251 SUU50N03-09P--E3 08-Apr-05 SUU50N03-09P	PDF
SUD50N03-09P Abstract: SUD50N03-09P-E3 Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available	Original	SUD50N03-09P O-252 SUD50N03-09P-E3 11-Mar-11 SUD50N03-09P SUD50N03-09P-E3	PDF
Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers	Original	SUD50N03-09P O-252 SUD50N03-09P S-31272--Rev. 16-Jun-03	PDF
SUD50N03-09P Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D TO-252	Original	SUD50N03-09P O-252 SUD50N03-09P S-31875--Rev. 15-Sep-03	PDF
SUU50N03-09P Contextual Info: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters	Original	SUU50N03-09P O-251 SUU50N03-09P--E3 Curre10 S-41696--Rev. 20-Sep-04 SUU50N03-09P	PDF
SUD50N0309P Abstract: SUD50N03-09P SUD50N03-09P-E3 Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available	Original	SUD50N03-09P O-252 SUD50N03-09P-E3 18-Jul-08 SUD50N0309P SUD50N03-09P SUD50N03-09P-E3	PDF
SUR50N03-09P Abstract: 72181 Contextual Info: SUR50N03-09P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS	Original	SUR50N03-09P O-252 SUR50N03-09P--E3 SUR50N03-09P-T4--E3 Uni75 S-32694--Rev. 19-Jan-04 SUR50N03-09P 72181	PDF
72181 Contextual Info: SUR50N03-09P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS	Original	SUR50N03-09P O-252 SUR50N03-09P--E3 SUR50N03-09P-T4--E3 08-Apr-05 72181	PDF
Contextual Info: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters	Original	SUU50N03-09P O-251 S-31871--Rev. 15-Sep-03	PDF
SUU50N03-09P Contextual Info: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters	Original	SUU50N03-09P O-251 SUU50N03-09P--E3 18-Jul-08 SUU50N03-09P	PDF

Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available	Original	SUD50N03-09P O-252 SUD50N03-09P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
S-40573-Rev Abstract: 40573 Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters	Original	SUD50N03-09P O-252 SUD50N03-09P SUD50N03-09P--E3 08-Apr-05 S-40573-Rev 40573	PDF
Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available	Original	SUD50N03-09P O-252 SUD50N03-09P-E3 08-Apr-05	PDF
Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available	Original	SUD50N03-09P O-252 SUD50N03-09P SUD50N03-09P-E3 11-Mar-11	PDF
Contextual Info: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers	Original	SUU50N03-09P O-251 S-31871--Rev. 15-Sep-03	PDF
S8079 Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available	Original	SUD50N03-09P O-252 SUD50N03-09P SUD50N03-09P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S8079	PDF
40573 Abstract: SUD50N03-09P S-40573-Rev Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters	Original	SUD50N03-09P O-252 SUD50N03-09P--E3 Avalanch75 S-40573--Rev. 29-Mar-04 40573 SUD50N03-09P S-40573-Rev	PDF
Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available	Original	SUD50N03-09P O-252 SUD50N03-09P SUD50N03-09P-E3 08-Apr-05	PDF
TL 1074 CT Abstract: megamos 46 08 09 6 a 1712 mosfet IXTH20N55 25N50 f g megamos Contextual Info: I X Y S IDE C0RP » 1 4L,âfc,52b 0000344 fl □ IX Y S M e ga M O S’“ FETs IXTH20N60, 55 IXTM20N60, 55 MAXIMUM RATINGS Sym. IXTH20N55 IXTM20N55 IXTH20N60 IXTM20N60 Drain-Source Voltage 1 Vd s s 550 600 Drain-Gate Voltage (R q s = 1-OMfl) (1) Vd g r	OCR Scan	IXTH20N55 IXTH20N60 IXTM20N55 IXTM20N60 00D0344 IXTH20N60, IXTM20N60, 50-600V, O-247 TL 1074 CT megamos 46 08 09 6 a 1712 mosfet 25N50 f g megamos	PDF
5A bridge rectifier Abstract: semikron thyristor skt 45 Contextual Info: SKT 1400 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Capsule Thyristor Line Thyristor "+ "+4 "%*+ " 2>!!	Original	C-12B 52Btungselektronik 5A bridge rectifier semikron thyristor skt 45	PDF

52B DIODE Search Results

52B DIODE Result Highlights (5)

52B DIODE Datasheets Context Search

10N03

BUK582-60A

SUR50N03-09P

SUU50N03-09P

SUD50N03-09P

SUD50N03-09P

SUU50N03-09P

SUD50N0309P

SUR50N03-09P

72181

SUU50N03-09P

S-40573-Rev

S8079

40573

TL 1074 CT

5A bridge rectifier