S8079 Search Results
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MISCELLANEOUS S8079-208 |
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Samtec Inc IDMD-02-S-80.79 |
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S8079 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si2303CDSContextual Info: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 08-Apr-05 | |
Si7884BDP-T1-E3
Abstract: Si7884BDP
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Si7884BDP Si7884BDP-T1-E3 08-Apr-05 | |
Contextual Info: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.) |
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Si3473CDV Si3473CDV-T1-E3 08-Apr-05 | |
Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available |
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SUD50N03-09P O-252 SUD50N03-09P-E3 08-Apr-05 | |
Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 18-Jul-08 | |
Si7192DP
Abstract: Si7192DP-T1-GE3
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Si7192DP Si7192DP-T1-GE3 08-Apr-05 | |
LCD display jhd
Abstract: jhd 16a S-1380 JHD LCD S-81250SGY s-7116A TRANSISTOR PNP BA RT SOT 89 S-87050 M6M80041 notebook Universal LCD inverter AVT
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S-801 S-809 S-808 S-807 Boursidiere-BP72 1-0009-180/SH LCD display jhd jhd 16a S-1380 JHD LCD S-81250SGY s-7116A TRANSISTOR PNP BA RT SOT 89 S-87050 M6M80041 notebook Universal LCD inverter AVT | |
Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available |
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SUD50N03-09P O-252 SUD50N03-09P SUD50N03-09P-E3 11-Mar-11 | |
Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
S7116A
Abstract: S13P40A IC HS 8110 equivalent transistor s8850 4609 MOSFET INVERTER chip 8-pin 4502 S-2927A bu 808 af S8850 by 808 dfx
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S-808 S-807 S-806 S-809 1-9807-020-MS/AC S7116A S13P40A IC HS 8110 equivalent transistor s8850 4609 MOSFET INVERTER chip 8-pin 4502 S-2927A bu 808 af S8850 by 808 dfx | |
Si7192DP
Abstract: Si7192DP-T1-GE3
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Si7192DP Si7192DP-T1-GE3 11-Mar-11 | |
J-STD-020A
Abstract: Si8413DB
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Si8413DB Si8413DB-T1-E1 08-Apr-05 J-STD-020A | |
SUD50N03-09P
Abstract: SUD50N03-09P-E3
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SUD50N03-09P O-252 SUD50N03-09P-E3 11-Mar-11 SUD50N03-09P SUD50N03-09P-E3 | |
Vishay DaTE CODE 1206-8
Abstract: AN811 marking code vishay 1206-8 S8079
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Si5406CDC Si5406CDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE 1206-8 AN811 marking code vishay 1206-8 S8079 | |
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Contextual Info: SUM36N20-54P Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 RDS(on) (Ω) ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ.) 57 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested |
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SUM36N20-54P O-263 SUM36N20-54P-E3 08-Apr-05 | |
Contextual Info: New Product Si7192DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60 0.00225 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 43.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side 5.15 mm |
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Si7192DP Si7192DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si7192DPContextual Info: New Product Si7192DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0019 at VGS = 10 V 60 0.00225 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 43.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side 5.15 mm |
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Si7192DP Si7192DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
TCS3084-01Contextual Info: DIN =i V * r "J K HOSIDEN DIN CONNECTORS In-Line Sockets) U N IT : m m TCS8000 X / Series ^EB Ini $ -f TV Soldering Connection Type TCS8056-01 -5201 D IN S ta n d a rd N o. 41524 4I524 N um ber o f C o n ta c ts ttmm 7 7 “> a /B ush & 45327 5a 5b 45322 |
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TCS8000 TCS8056-01 4I524 TCS8C-34-0I TCS8044-01-5201 TCS8O54-0I-52C1 TCSSG24-01 TC58064-01 S0O84-Oâ TCS8094-01-5201 TCS3084-01 | |
Contextual Info: New Product Si5406CDC Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 0.023 at VGS = 2.5 V 6 0.027 at VGS = 1.8 V 6 VDS (V) 12 Qg (Typ.) 11.5 nC • Halogen-free • TrenchFET Power MOSFET |
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Si5406CDC Si5406CDC-T1-GE3 25emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si7192DP-T1-GE3
Abstract: Si7192DP si7192
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Si7192DP Si7192DP-T1-GE3 18-Jul-08 si7192 | |
Contextual Info: New Product Si5406CDC Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 0.023 at VGS = 2.5 V 6 0.027 at VGS = 1.8 V 6 VDS (V) 12 Qg (Typ.) 11.5 nC • Halogen-free • TrenchFET Power MOSFET |
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Si5406CDC Si5406CDC-T1-GE3 08-Apr-05 | |
S8079Contextual Info: New Product Si5406CDC Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 6 0.023 at VGS = 2.5 V 6 0.027 at VGS = 1.8 V 6 VDS (V) 12 Qg (Typ.) 11.5 nC • Halogen-free • TrenchFET Power MOSFET |
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Si5406CDC Si5406CDC-T1-GE3 11-Mar-11 S8079 | |
Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available |
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SUD50N03-09P O-252 SUD50N03-09P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |