54F413DM Search Results

54F413DM

Abstract: 74F413 74F413PC J16A N16E
Contextual Info: 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I/O General Description Features The ’F413 is an expandable fall-through type high-speed First-In First-Out FIFO buffer memory organized as 64 words by four bits. The 4-bit input and output registers record

Motorola transistor smd marking codes

Abstract: 7900801CA lm6482a 5962-8993001MIA replacement for 11c90 TRANSISTOR SMD MARKING CODE QA LM311 SMD JM38510/10305BEA LM714h Motorola semiconductor smd marking codes
Contextual Info: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1998 Listing GIDEP Nr: GIDEP Category: Issued: 01/06/98 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):

54F413

Abstract: 54F413DMQB 54F413FMQB 54F413LMQB
Contextual Info: MILITARY DATA SHEET Original Creation Date: 05/06/96 Last Update Date: 07/30/96 Last Major Revision Date: 05/06/96 MN54F413-X REV 1A0 64 X 4 FIRST-IN FIRST OUT BUFFER MEMORY WITH PARALLEL I/O General Description The F413 is an expandable fall-through type high-speed First-In First-Out FIFO buffer

Contextual Info: Semiconductor January 1995 54 F /7 4 F 4 1 3 64 x 4 First-In First-O ut B u ffer M em ory w ith Parallel I/O General Description Features The ’F413 is an expandable fall-through type high-speed First-In First-Out FIFO buffer memory organized as 64 words by four bits. The 4-bit input and output registers rec­

74act3301

Abstract: scl4412 75307 equivalent CD4015 jm38510/05101 DISCO DFG840 JM38510/33903BEA 74lvc3245 JM38510/05101BCA JM38510/34001BCA
Contextual Info: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 1999 Listing GIDEP Nr: GIDEP Category: Issued: 01/05/99 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following High Reliability product(s):

Contextual Info: 54F413,74F413 54F413 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I/O Literature Number: SNOS198A 54F 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I O General Description Features The ’F413 is an expandable fall-through type high-speed

54F413DM

Abstract: 74F10 74F413PC J16A N16E
Contextual Info: & National Semiconductor 54F/74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I/O General Description Features The 'F413 is an expandable fall-through type high-speed First-In First-Out FIFO buffer memory organized as 64 words by four bits. The 4-bit input and output registers rec­

Contextual Info: 413 National Semiconductor tß 54F/74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I/O General Description Features The ’F413 is an expandable fall-through type high-speed First-In First-Out FIFO buffer memory organized as 64 words by four bits. The 4-bit input and output registers rec­

54F413DM

Abstract: 74F413 74F413PC C1995 J16A N16E
Contextual Info: 54F 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I O General Description Features The ’F413 is an expandable fall-through type high-speed First-In First-Out FIFO buffer memory organized as 64 words by four bits The 4-bit input and output registers record and transmit respectively asynchronous data in parallel

Contextual Info: Nationa l Semiconductor MILITARY DATA SHEET Original Creation Date: 05/06/96 Last Update Date: 07/30/96 Last Major Revision Date: 05/06/96 MN54F413-X REV 1A0 64 X 4 FIRST-IN FIRST OUT BUFFER MEMORY WITH PARALLEL I/O General Description The F413 is an expandable fall-through type high-speed First-In First-Out FIFO buffer