593 SOT23 Search Results

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT593 TRANSISTOR PNP SOT–23 FEATURES  Complementary Type FMMT493 MARKING:593 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

FMMT593

Contextual Info: SOT23 PNP SILICON PLANAR FMMT593 HIGH VOLTAGE TRANSISTOR ISSUE 3- NOVEMBER 1995 I I I COMPLEMENTARY TYPE FM MT493 PARTMARKING DETAIL -593 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Emitter-Base ——— Peak Pulse ‘C Voltage –-— v EBO ‘5 ICM

FMMT493

Abstract: FMMT593 DSA003699
Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 1.0 +-=5V V

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B * 0.3 + * I+/I*=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 10mA 1mA 200 1.0 +-=5V

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT593 ✪ COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 E C B * +25 ° C I /I =10 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C + * I+/I*=50 I /I =10 +-=5V + * V I /I =10

CMMT593

Abstract: marking code 51 SMD Transistor TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE WT CMMT493 MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23 transistor smd marking NA sot-23 smd transistor TN
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CMMT593 PIN CONFIGURATION PNP SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =593 Complementary CMMT493

MMBT593

Contextual Info: MMBT593 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A Collector 3 Medium Power Transistor L 3 3 C B Top View 1 MARKING 1 1 Base K 2 E 2 2 593 D Emitter

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 • NOVEMBER 1995_Q C O M PLEM EN TA RY TYPE FM M T493 P A R T M A R K IN G D E T A IL - 593 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L C o lle cto r-B a se V o lta ge V ALUE

Contextual Info: SOT23 PNP SILICON PLANAR FMMT593 HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995_ O C O M P L E M E N T A R Y TY PE F M M T 4 9 3 P A R T M A R K IN G DETA IL - 593 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: A Product Line of Diodes Incorporated FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated FMMT593 100V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -100V Maximum Continuous Collector Current IC = -1A Excellent hFE Characteristics up to IC = -1A

TRANSISTOR SMD PNP 1A

Abstract: NA MARKING SOT23 FMMT593 transistor smd marking NA sot-23 593 SOT23
Contextual Info: Transistors SMD Type High Voltage Transistor FMMT593 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 PNP silicon planar 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: Transistors IC Transistor SMD Type Product specification FMMT593 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 PNP silicon planar 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

ecg rectifier diode

Abstract: ECG 558 ECG diodes diode ecg 588 ECG555A 110MP
Contextual Info: Microwave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IMPED. 0 3 0 MHz (Ohms) VSWR Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060

VARISTOR 593

Abstract: 223 Varistor RY 228 Varistor 271 592 varistor BLF 377 RY 227 VARISTOR 593 275 VARISTOR 338 VARISTOR PTC
Contextual Info: [• - - r Numerical Index NUMERICAL INDEX OF CATALOG NUMBERS CATALOG NUMBER PAGE NUMBER 100 000 S e r ie s .353-354 101 000 Series . 352

FMMT593

Abstract: 593 SOT23
Contextual Info: FMMT593 COLLECTOR 3 General Purpose Transistor PNP Silicon P b Lead Pb -Free 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -120 V Collector-Emitter Breakdown Voltage V(BR)CBO -100 V Emitter-Base Breakdown Voltage

motorola diode device data

Abstract: IV01TS
Contextual Info: SILICON EPICAP DIODE . . . designed fo r 900 MHz frequency control and tuning applications; providing solid-state re lia bility in replacem ent of mechanical tuning methods. MMBV809LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and U niform Tuning Ratio

diode ECG125

Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
Contextual Info: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time

6206 voltage regulator

Abstract: D0127 ultra low drop, high current diode Schottky Barrier 3A 12 pulse diode rectifier Common Anode dual Schottky Rectifier
Contextual Info: RECTIFIERS G E N E H A L PURPOSE NTE Type No. Material 584 Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop (Volts) Reverse Recovery Time (ns) V Description and Application

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Pin Configuration PNP Plastic-Encapsulate Transistor Top View Power dissipation: PCM=0.25W Tamb=25ć

SMD Transistors w04

Abstract: smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5
Contextual Info: Vishay Telefunken Marking on Packages1 view from top Cathodering unwind TO50 3 Pin and TO50 (4 Pin) SOD80 – QuadroMELF Label with information of TYPE on reel and package view from top view from top Cathodering unwind Cathodering unwind SOD80 MiniMELF Label with information of TYPE on reel and package

Contextual Info: SAMSUNG SEMI CONDUCTOR 14E INC D 1 7^4142 QÜG7323 4 T - ¿ 7 - i MPS6513 ! NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V ceo=30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: • bb53^31 D0S4704 STS B A P X N AMER PHILIPS/DISCRETE BF821 BF823 b?E D J V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N