6 VOLT NPN Search Results

40 watts power amplifier rl 8 ohms

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large-signal, common base, Class-C CW amplifier applications in the range 1600 - 1 6 4 0 MHz. • Specified 28 Volt, 1.6 GHz Class-C Characteristics

MRF842

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF842 The RF Line NPN Silicon RF Power Transistor . designed for 12.5 volt UHF large-signal, common-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 80 6 -9 6 0 MHz.

TRANSISTOR S 838

Abstract: transistor c 838 TRANSISTOR motorola 838
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF847 . . . designed for 12.5 volt UHF large-signal, com m on-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 80 6 -9 6 0 MHz.

MRF844

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF844 The RF Line NPN Silicon RF Power TVansistor . . . designed for 12.5 volt UHF large-signal, common-base am plifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 6 -9 6 0 MHz.

C12P

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 volt UHF large-signal, com m on-base am plifier applica­ tions in industrial and com m ercial FM equipm ent operating in the range o1 8 0 6 -9 6 0 MHz.

MRF844

Abstract: equivalent transistor rf "30 mhz" 8w RF POWER TRANSISTOR NPN Transistor D 2599
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silicon RF Power Transistor . . . designed for 12.5 volt UHF large-signal, com m on-base am plifier applica­ tions in industrial and com m ercial FM equipm ent operating in the range of 8 0 6 -9 6 0 MHz,

TIPL762

Abstract: TIPL762A T1PL762
Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS _ AUGUST 1978 • REVISED MAY 1995 • Rugged TViple-Diffused Planar Construction • 6 A Continuous Collector Current • Operating Characteristics Fully Guaranteed at100°C • 1000 Volt Blocking Capability

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF840 . . . designed for 12.5 volt UHF large-signal, com m on-base am plifier applica­ tions in industrial and com m ercial FM equipm ent operating in the range of 8 0 6 -9 6 0 MHz.

Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature

Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature

by205 diode

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL762 TIPL762A
Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature

BY205-400

Abstract: TRANSISTOR D 1978 by205 by205 diode TRANSISTOR 2n2904 2N2222 2N2904 D44H11 D45H11 TIPL762
Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature

Contextual Info: TD62303F T D62303F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 6 DIGIT DRIVER Unit in mm Features . Output Current . 500mA Max. 17V . Output Volt a g e . . TTL, C-MOS Comp a t i b l e Inputs . Suitable for D i g i t -Driver of 6 Digit Common

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858 MRF858S NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 80 0 -9 6 0 MHz.

c 2579 power transistor

Abstract: hf power transistor NPN c 2579 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.

NEL130681-12

Abstract: J425 NEL1306 NEL1300 2SC3542
Contextual Info: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL13208I-12 FEATURES DESCRIPTION • HIGH LINEAR POWER AND GAIN: NEL1306: PidB = 38 dBm, GidB - 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB - 6 dB TYP NEC's NEL1300 series of NPN epitaxial microwave power

Contextual Info: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF840 The RF Line N PN Silicon RF Power TVansistor . designed for 12.5 volt UHF large-signal, common-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 6 -9 6 0 MHz.

ATIC 59 C1

Abstract: 301Ah transistor bd136 mrf857s 03Af
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.

Contextual Info: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz

MP4T3243

Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers

sot23 1303

Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR F X T 6 1 4 ISSUE 1 - FEB 94 FEATURES * 100 Volt VCE0 * * /C \ ¿ 7 ffh—' //iff Í//H 800 mA continuous current Gain of 10K at lc=500mA * Pt0,= 1W att APPLICATIONS * Lamp, solenoid and relay drivers E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silicon RF Power Transistors MRF891 MRF891S . . , designed for 24 volt U H F large-signal, common-emitter amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 0 -9 6 0 MHz.