NE960R2
Abstract: NE960R200 NE960R275 NE961R200
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
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NE960R2
NE961R200
NE960R200
NE960R275
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NEC 7808
Abstract: gl 7808 NE6500179A NE6500179A-T1 7808 nec
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE6500179A 1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power CW with high
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NE6500179A
NE6500179A
NE6500179A-T1
NEC 7808
gl 7808
NE6500179A-T1
7808 nec
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nec k 4145
Abstract: NE6510179A NE6510379A NE651R479A NE651R479A-T1
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear
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NE651R479A
NE651R479A
NE6510179A
NE6510379A.
nec k 4145
NE6510379A
NE651R479A-T1
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NEC JAPAN
Abstract: NE960R2 NE960R200 NE960R275
Text: DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
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NE960R2
NE960R200
NE960R275
NEC JAPAN
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec 772
Abstract: NE6510179A NE6510179A-T1
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power CW with high linear
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NE6510179A
NE6510179A
nec 772
NE6510179A-T1
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NE6510379A
Abstract: NE6510379A-T1 nec 1761 hjfet application
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 W of output power with high linear gain, high efficiency and
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NE6510379A
NE6510379A
NE6510379A-T1
nec 1761
hjfet application
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NE960R5
Abstract: NE960R500 NE960R575
Text: DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear
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NE960R5
NE960R500
NE960R575
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NE6510379A
Abstract: NE6510379A-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Grasslin 0871-B
Abstract: LD622 2T2292GA ag208 Intermatic AL300B SP640B
Text: General Catalog WEATHERPROOF ENERGY CONTROLS PROFESSIONAL LIGHTING POOL & SPA CONTROLS SURGE PROTECTION CONSUMER PRODUCTS www.intermatic.com Providing a Brighter Solution A system is defined as a group of units, combined to form a whole, which operates in unison. Intermatic takes this
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300TS10057
Grasslin 0871-B
LD622
2T2292GA
ag208
Intermatic
AL300B
SP640B
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NE960R5
Abstract: NE960R500 NE960R575 NE961R500 NE962R575 ku-band oscillator
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear
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NE960R5
NE961R500
NE960R500
NE960R575
NE962R575
ku-band oscillator
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PG2020
Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
PG2020
PG2011
TO46
PG1083
PG2102
2N4863
PG1050
PG1051
PG1010
PG1053
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pg2004
Abstract: PG2011 pg2001 PG2006
Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
pg2004
PG2011
pg2001
PG2006
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DARLINGTON 3A 100V npn
Abstract: complementary npn-pnp power transistors 2N3766 PT7015 complementary npn-pnp PG2051 2N3767 TO66 PLASTIC package 7014 pnp and npn
Text: 0043592 A P I A P I ELECTRONI CS !► ELECTRONICS INC 13 A00 6 7 I NC 13 A iiPRÄ ,U £ ELECTH C S'JQS DIARY DE 3 -0/_. - J □ D Ll 3 5 cia QDODDt,? E f~ - NPN and PNP Complementary Silicon Planar Power Transistors continued 2A B V ceo TO-66 TO-5 TO-46
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D435CIB
2N3766
2N3740
PG1050
PG2050
PG1001
PG2001
2N3767
2N3741
PG1051
DARLINGTON 3A 100V npn
complementary npn-pnp power transistors
PT7015
complementary npn-pnp
PG2051
TO66 PLASTIC package
7014
pnp and npn
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Untitled
Abstract: No abstract text available
Text: 0043592 A P I E LE CTRONICS INC _. _13A0Q67 3 VI ELECTRONICS INC 13 DE J □□43Scia □OOODb? 2 A P I U W NPN and PNP Complementary Silicon Planar Power Transistors continued . A bPRA ,UE ClECTR C S'JQS OlARY 2A TO-5 TO-66 BV ceo NPN
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13A0Q67
2N3766
2N3740
PG1050
PG2050
PG1001
PG2001
2N3767
2N3741
PG1051
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2N4862
Abstract: PG1010 API Electronics transistor 1012 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006
Text: :a "p I ELEC T R O N IC S IN C : 13 . / ,-Í3A00 75t DE~J QD43Scì2 0G0D07S 1 ^ - fa - INTERIM BULLETIN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN * 3 n “O n m o v P I R G O E L E C T R o n ic s iñc. ; Z ^ rJ
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QD43Sc
0G0D07S
PG1001
PG1017,
T0-46
PG1002
PG1003
2N4862
PG1004
PG1010
API Electronics
transistor 1012
PG1005
PG1006
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