PG1007 Search Results

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

pg2004

Abstract: PG2011 pg2001 PG2006
Contextual Info: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE

Contextual Info: [A F I E L E C T R O N IC S 13 Y - _ ^3 A 0 0 75f IN C DE~| aDM aS^S 0D 0007S 1 p IN T E R IM B U L LE T IN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN P I R G O E itC T R om cs inc. TYPE PG lbO l thru PG1017, 2 A M P NPN

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

VP215

Abstract: 10-PIN TFL0816-15N
Contextual Info: DATA SHEET GaAs HBT INTEGRATED CIRCUIT µPG2301TQ POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2301TQ is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed