6018A Search Results

Contextual Info: 1/2 Multilayer Chip Phase Shifters(Delay Lines) For DCS/PCS Conformity to RoHS Directive DEA Series DEA101910DT-6018A1 SHAPES AND DIMENSIONS 0.52max. 2 0.12±0.07 0.3±0.10 0.12±0.07 0.5±0.05 3 1 0.3±0.10 1.0±0.05 4 Terminal functions 1 IN 2 GND 3 OUT

Transistor TT 2246

Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23

Dsei 2x101-12A

Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Contextual Info: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000

diode DSDI 9

Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Contextual Info: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B

diode DSDI 12

Abstract: MS 1307 DSDI
Contextual Info: DSDI 60 IFAVM = 63 A VRRM = 1400-1800 V trr = 40 ns Super Fast Recovery Diode VRSM VRRM V 1400 1600 1800 V 1400 1600 1800 Type A C DSDI 60-14A DSDI 60-16A DSDI 60-18A TO-247 AD C  C A A = Anode, C = Cathode Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5

Contextual Info: □IXYS Advanced Technical Information Super Fast Recovery Diode DSDI60 IFAVM 63 A vr 1400-1800 V RRM trr v RSM v RRM V Type 1400 1600 1800 Symbol C TO-247 AD DSDI 60-14A DSDI 60-16A DSDI 60-18A Test Conditions Maximum Ratings A A A t = 10 ms 50 Hz , sine

DHG60C600HB

Abstract: 1.5kv fast recovery diodes DOUBLE FAST DIODE dh40-18a DH20-18A DH60-18A DHF30IM600PN DHF30IM600QB DHG30I600HA T0-247
Contextual Info: N E W P R O D U C T B R I E □ IXYS F SQNIC-FRD . New Soft Recovery Diodes U L T R A F A S T R E C T IF IE R W ITH V E R Y L O W T A IL C U R R E N T March 2006 Overview: IX Y S Corporation - a leader in pow er sem ico ndu cto rs for P ow e r C onversion and M otion

Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A

sonic cleaner

Contextual Info: DH 60 Advanced Technical Information IFAVM = 64 A VRRM = 1400-1800 V trr = 150 ns Fast Recovery Diode SONIC series VRSM VRRM V V 1400 1600 1800 1400 1600 1800 Type C A TO-247 AD C DH 60-14A DH 60-16A DH 60-18A A A = Anode, C = Cathode Conditions Maximum Ratings

32N170AH1

Abstract: 32N17 PLUS247 6018A S3670 32n170
Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

60-18A

Abstract: Dh60 F2004 6018A
Contextual Info: DH 60 IFAVM = 60 A VRRM = 1400-1800 V trr = 150 ns Fast Recovery Diode SONIC-FRDTM series VRSM VRRM V V 1400 1600 1800 1400 1600 1800 Type C A TO-247 AD C DH 60-14A DH 60-16A DH 60-18A A A = Anode, C = Cathode Conditions Maximum Ratings IFRMS IFAVM IFRM TVJ = TVJM

DSdi 5

Abstract: DSDI
Contextual Info: Advanced Technical Information Super Fast Recovery Diode VRSM V 1400 1600 1800 VRRM DSDI 60 IFAVM = 63 A VRRM = 1400-1800 V = 40 ns trr Type C A TO-247 AD V 1400 1600 1800 DSDI 60-14A DSDI 60-16A DSDI 60-18A C TAB A Symbol Test Conditions I FRMS IFAVM ①

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

DSDI

Abstract: ixys dsei 60-12 60-18A
Contextual Info: DSDI 60 Super Fast Recovery Diode IFAVM = 63 A VRRM = 1400-1800 V trr = 40 ns Preliminary Data V 1400 1600 1800 VRRM Type C A TO-247 AD V 1400 1600 1800 C DSDI 60-14A DSDI 60-16A DSDI 60-18A A A = Anode, C = Cathode Symbol Test Conditions IFRMS IFAVM ÿÿ①

Contextual Info: DSDI 60 Super Fast Recovery Diode IFAVM = 63 A VRRM = 1400-1800 V = 40 ns trr Preliminary Data V 1400 1600 1800 VRRM Type C A TO-247 AD V 1400 1600 1800 C DSDI 60-14A DSDI 60-16A DSDI 60-18A A A = Anode, C = Cathode Symbol Test Conditions IFRMS IFAVM ¬

Contextual Info: DH 60 IFAVM = 60 A VRRM = 1400-1800 V trr = 150 ns Fast Recovery Diode SONIC-FRDTM series VRSM VRRM V V 1400 1600 1800 1400 1600 1800 Type C A TO-247 AD C DH 60-14A DH 60-16A DH 60-18A A A = Anode, C = Cathode Conditions Maximum Ratings IFRMS IFAVM IFRM TVJ = TVJM

2x31-06c

Abstract: 19-06AS DSE 8-06A diode DSDI 12 DSEI 120-12A DSEI 120-06A diode AA24
Contextual Info: FRED Diodes Fast Recovery Epitaxial Diodes FRED DSE. lFAV= 6 - 120 A Type FAV d=0.5 VJM A New *FSM 10 ms 45°C A v F e IF max. TVJ = 150°C V A t rr typ. TVj=25°C ns 2 x 3 0 .P lRM @-di/dt typ. TVJ 1006C A A/ocS K/W max. W Outline drawings on page 91-100

IXYS DSEI 2X121-02a

Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
Contextual Info: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

Z1075A

Abstract: Z1016A Z1015A Z1020A z1033a Z1051A Z1051 z1033 z2062 Z1030A
Contextual Info: Data Sheet No. C-600 ÜEKH28E CKE Zener Avalanche Protector Transient Voltage Suppressors D escription/Features T R A N Z A P ’s are silico n PN ju n c tio n d iod es de sig ned , m a n u fa ctu re d and sp e cifie d a s T ransien t V oltage S up pre ssors having a n o n -lin e a r cu rre n t-v o lta g e c h a ra c ­