639 M Search Results

16F636

Abstract: PIC16F636 pic 16f636 application notes PIC16F639 microchip pic 16pin
Contextual Info: PIC16F636/639 PIC16F636/639 Rev. A Silicon/Data Sheet Errata The PIC16F636/639 parts you have received conform functionally to the Device Data Sheet DS41232B , except for the anomalies described below. Microchip intends to address all issues listed here in

75639p

Abstract: 75639g 75639 75639S 19E1 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
Contextual Info: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UFA 639 , UFA 639 UFA 639 S bt A, 0V, 25 m, anraF wer OSTs) utho 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the

Contextual Info: 1832 West Collins Avenue, Orange, CA 92867-5425 Tel:714-639-1000 http://www.ussensor.com mailto:sales@ussensor.com Fax:714-639-1220 USP6295 RESISTANCE VS. TEMPERATURE TABLE Temp (°C) Temp (°F) Resistance Ratio Rt/R@+25°C TC (%/°C) Resistance Ω -55

v1010

Contextual Info: BB 639 Silicon Variable Capacitance Diode 2 • For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 639 yellow S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage

bc736

Abstract: bc635 BC637 BC639
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

NPN transistor ECB TO-92

Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

bc639

Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

transistor C 639 W

Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

bc635

Abstract: transistor C 639 W
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

0805HS-560TKBC

Abstract: MAX3675 MAX3675EHJ MAX3675EHJEVKIT MAX3676 MAX3676EHJ MAX3676EHJEVKIT
Contextual Info: 19-1419; Rev 4; 9/99 MAX3675/MAX3676 Evaluation Kits Component Suppliers SUPPLIER Coilcraft PHONE 847-639-6400 FAX 847-639-1469 _Features ♦ SMA Connections for all Data and Clock I/Os ♦ Test Points for Monitoring Received-Signal-Strength Indicator RSSI

bc736

Abstract: BC635 BC637 BC639
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

B586

Abstract: Q62702-B586
Contextual Info: BB 639 Silicon Variable Capacitance Diode ● For tuning of extended frequency bands in VHF TV/VTR tuners Type Ordering Code tape and reel Pin Configuration 1 2 Marking Package BB 639 Q62702-B586 C yellow S SOD-323 A Maximum Ratings Parameter Symbol Values

BC639

Abstract: BC 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 BC635 complementary 637 638 bc63
Contextual Info: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 1 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360

Contextual Info: TRS INTERNATIONAL LTD Sales Office 206-210 ILDERTON ROAD LONDON SE15 INS Telephone: 071-639 7844 Telex: 887665 TRS LDN Telefax: 071-639 6571 -290 -^>50 D IN PRINTED CIRCUIT SOCKETS Type Mounting holes 75 2.5, Type _L47-391 Z q c S * : l4 r - f 2.5 : i: f W i i l

TQFP100

Abstract: TQFP-100
Contextual Info: Philips Semiconductors Package outlines TQFP100: plastic thin quad flat package; 100 leads; body 14 x 14 x 1.0 mm 1997 Aug 04 639 SOT386-1

s639b

Abstract: s639 SN54ALS638
Contextual Info: TYPES SN54A LS638A , SN54A LS639A , S N 54A S 638, S N 54A S 639 SN74A LS638A , SN74A LS639A , S N 74A S 638, SN 74A S 639 OCTAL BUS TRANSCEIVERS D 2 2 6 1 , DECEMBER 1 9 8 3 Bidirectional Bus Transceivers in HighDensity 20-Pin Packages S N 54A LS ', S N 54A S ' . . . J PACKAGE

pcb layout of rogowski coil

Abstract: rogowski coil digital integrator layout of rogowski coil with integrator on pcb
Contextual Info: AN-639 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Analog Devices Energy ADE Products: Frequently Asked Questions (FAQs) by Hariharan Mani INTRODUCTION

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 BC635/637/639 Plastic-Encapsulate Transistors TO-92 TRANSISTOR NPN 1. EMITTER FEATURES High current transistors 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: RS ITEM NO 211-639 APEM ITEM NO Q22P1CXXB24A LED/Multiled LED Optimum voltage V 24Vac/dc Intensity Mounting Size 22mm Rectifier - Reverse Voltage Mounting Finish Prominent AC current - Protection IP67 DC current 10mA (max) Mount Holder Chrome Bezel Voltage Tolerance(%)

Contextual Info: Technische Information / Technical Information Netz-Thyristor Phase Control Thyristor T 639 N 18.22 N Elektrische Eigenschften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic C ollector Emitter Voltage: at R B E = 1Kohm : : Collector Emitter Voltage: : :

bc736

Abstract: transistor C 639 W bc639 BC635 BC637
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage

transistor C639

Abstract: transistor C635 c639 transistor C639 w
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635

Contextual Info: SENSITRON SEMICONDUCTOR SD125SE45A/B/C Technical Data Data Sheet 639, Rev.- SILICON SCHOTTKY RECTIFIER DIE Extremely Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: