bc736
Abstract: BC635 BC637 BC639
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc736
BC635
BC637
BC639
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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bc736
Abstract: transistor C 639 W transistor BC637 complement BC635 BC639 BC637
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • C om plem ent to BC 635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter V oltage at Rbe=1 Kohm C ollecto r E m itter V oltage C ollecto r E m itter V oltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
bc736
transistor C 639 W
transistor BC637 complement
BC639
BC637
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R5C485-LQFP144
Abstract: bc725 BC698 BC236 BC709 bc711 BC717 BC683 RC300MB SMD RA3 PNP
Contextual Info: 8 Part List 8-1 Exploded View 8-1-1 System Exploded Housing Bottom P28 8-1 This Document can not be used without Samsung’s authorization. 8 Part List No Part Name Code No Q’ty Specification Vendor 1 UNIT/HOUSING-BOTTOM BA75-01374A 1 SON & ARRK 2 FAN BA31-00018A
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BA75-01374A
BA31-00018A
BA92-02744A
BA75-01375A
BA59-01294A
BA61-00910A
BA43-00134A
BA75-01376A
BA59-01052A
BA75-01377A
R5C485-LQFP144
bc725
BC698
BC236
BC709
bc711
BC717
BC683
RC300MB
SMD RA3 PNP
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PDF
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bc736
Abstract: bc635 BC637 BC639
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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Original
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc736
bc635
BC637
BC639
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PDF
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bc736
Abstract: transistor C 639 W bc639 BC635 BC637
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
bc736
transistor C 639 W
bc639
BC635
BC637
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1g22SB
Abstract: SB3211 BC741 SIS 648 SB315 CP2216 AMS1117 1104 BC246 RB342 diode sb315
Contextual Info: M A R G A I D K C O L B M E T S Y S D 3 K PCB LAYER High Speed DDR-SDRAM K4D263238A-GC36 Clock Gen CY28381 100MHz P.17,18 DeskTop CPU Northwood FSB 400/533MHz P.11 2.5V 266/333MHz P.19 275MHz P.5,6 P.3 DDR*2 CRT CONN Delay Buffer CY28352 2.5V 266/333MHz P.4
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CY28381
K4D263238A-GC36
100MHz
400/533MHz
275MHz
266/333MHz
CY28352
NV18-PRO)
133MHz
1g22SB
SB3211
BC741
SIS 648
SB315
CP2216
AMS1117 1104
BC246
RB342
diode sb315
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BC635 TRANSISTOR E C B
Abstract: transistor C 639 W
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage at Rbe=1 Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
BC635 TRANSISTOR E C B
transistor C 639 W
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BC245C
Abstract: BC822 bc810 max1987 BC495 RTL8110S-32 BC819 BC823 ALC202A ar9270
Contextual Info: 5 4 3 S04 BLOCK DIAGRAM Dothan Yonah /Alviso D +1.8V +1.5V 478 Pins (Micro-FCPGA) FSB 4X100MHZ 4X133MHZ VDIMM DDR SDRAM 2.5V, 400/500MHz DDR-SODIMM1 Clocks +3V CPU Thermal Sensor P:5 MAX6648 PCI-Express x16(GFX) +1.5V CK410 CYPRESS: CY28411 IDT Video Controller
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MAX1987
MAX1715
MAX1999
CK410
CY28411
CV125
MAX1993
MAX8550
MAX6648
MAX8527
BC245C
BC822
bc810
max1987
BC495
RTL8110S-32
BC819
BC823
ALC202A
ar9270
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bc725
Abstract: BC248 BC249 BC195 BC105* BC106* BC107* BC108* BC109* BC110 bc711 BC710 bc188 BC712 BC246
Contextual Info: This Document can not be used without Samsung’s authorization. 9 Schematic Material List 9-1 Main Board Part List Code Location Category Spec 0902-001840 D 730 IC-MICROPROCESSOR 730PGA,1.6GHz,64Bit,uF 3709-001236 J1 CONNECTOR-CARD EDGE 68P,1.27MM,ANGLE,AU
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100nF
100nF,
2K/33OHM
220PF
10000NF,
bc725
BC248
BC249
BC195
BC105* BC106* BC107* BC108* BC109* BC110
bc711
BC710
bc188
BC712
BC246
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BC639 collector
Abstract: BC635 transistor 639 bc639 640 TRANSISTOR NPN transistor BC637 complement BC637
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25t; Characteristic Collector Emitter Voltage at R a E = 1K ohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
BC639 collector
transistor 639
640 TRANSISTOR NPN
transistor BC637 complement
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PDF
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bc736
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • C om plem ent to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Em itter V oltage at R be =1 Kohm : BC635 : BC637 : BC639
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
bc736
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PDF
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BC249
Abstract: BC248 BC246 bc711 bc725 bc732 BC247 BC217 samsung R519 BC735
Contextual Info: This Document can not be used without Samsung’s authorization. 9 Schematic Material List 9-1 Main Board Part List Code Location Category Spec 0902-001840 D 730 IC-MICROPROCESSOR 730PGA,1.6GHz,64Bit,uF 3709-001236 J1 CONNECTOR-CARD EDGE 68P,1.27MM,ANGLE,AU
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100nF
100nF,
2K/33OHM
220PF
10000NF,
BC249
BC248
BC246
bc711
bc725
bc732
BC247
BC217
samsung R519
BC735
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