64K X 8 BIT DYNAMIC RAM Search Results
64K X 8 BIT DYNAMIC RAM Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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4164-15FGS/BZA |
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4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) |
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4164-15JDS/BEA |
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4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) |
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4164-12JDS/BEA |
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4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) |
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2964B/BUA |
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2964B - Dynamic Memory Controller |
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TMS4030JL |
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TMS4030JL - TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 |
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64K X 8 BIT DYNAMIC RAM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MITSUBISHI LSIs MH6408AD-15 5 2 4 2 8 8 -B IT 6 5 536-W O RD BY 8-BIT DYNAMIC RAM D E S C R IP T IO N The MH6408AD is 65536 word x 8 bit dynamic RAM and consists of eight industry standard 64K x 1 dynamic RAMs in leadless chip carrier. The mounting of leadless chip carriers on a ceramic |
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MH6408AD-15 MH6408AD | |
1A43
Abstract: 4464 ram m4464 4464 64k 4464 texas
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TM4464LU8 30-Pin 4464LU 1A43 4464 ram m4464 4464 64k 4464 texas | |
smj4164
Abstract: SMJ4256 20D17
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SMJ4256 144-BIT SMJ4164 SMJ4256-12 SMJ4256-15 SMJ4256-20 smj4164 SMJ4256 20D17 | |
Contextual Info: FUJITSU MICROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS I>e| 374T7bH 0DQ30aH fi W ~ 70C 0 3 0 2 2 0T V i ' 2 3 * 7 FU JITSU • M B 8 5 1 0 3 A -1 2 , M B 8 5 1 0 3 A -1 5 MOS 65,536 x 8-Bit Dynamic RAM Module Daporlptlon The Fujitsu MB85103A Is a 64K x 8 dynamic RAM high density |
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374T7bH 0DQ30aH MB85103A MB8264A 18-pad 22-pln MSP-22S-CC02) | |
MC68451
Abstract: MVME101 MVME215 MVME319 MVME110-1 MC68010 MC68881 MC6810 mvme202 MVME204
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16-bit MVME101 MC68000 32Kbyte MVME110-1 MC68010 socket10. MVME121 MC68451 MVME101 MVME215 MVME319 MVME110-1 MC68881 MC6810 mvme202 MVME204 | |
MVME101
Abstract: MC68451 MVME110-1 cache ram 64k x 8 MVME205 MVME215 mvme202 1Mb static ram MVME050 MVME123
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16-bit MVME101 MC68000 32Kbyte MVME110-1 MC68010 socketME131 512Kb MVME202 MVME101 MC68451 MVME110-1 cache ram 64k x 8 MVME205 MVME215 mvme202 1Mb static ram MVME050 MVME123 | |
Contextual Info: Prelim inary FUJITSU MOS Memories • M B 8 2 6 4 A - 1 2 - W , M B 8 2 6 4 A - 1 5 - W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also |
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536-Bit MB8264A-W 004pn | |
MB8264A-15
Abstract: MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W
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MB8264A-12-W, MB8264A-15-W 536-Bit MB8264A-W MB8294A-12-W MB82S4A-1B-W MB8264A-15 MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W | |
V53C864Contextual Info: L f VITELIC V53C864 FAMILY HIGH PERFORMANCE, LOW POWER 64K X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM f 70/70L 80/80L 10/10L 12/12L M ax. RA S Access Tim e, tRAC HIGH PERFORMANCE V53C864 70 ns 80 ns 100 ns 120 ns M ax. Column Address Access Time, (tCAA) 35 ns |
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V53C864 70/70L 80/80L 10/10L 12/12L V53C864 V53C864L | |
Contextual Info: kf VITELIC V53C866 FAMILY HIGH PERFORMANCE, LOW POWER 64K X 8 BIT STA TIC COLUMN CMOS DYNAMIC RAM 70/70L HIGH PERFORMANCE V53C866 80/80L 10/10L 12/12L M ax. R A S Access Tim e, *RAC 70 ns 80 ns 100 ns 120 ns M ax. Column Address Access Tim e, (tCAA) 35 ns |
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V53C866 80/80L 70/70L V53C866 10/10L 12/12L V53C866L | |
Contextual Info: Preliminary ^ » • M B 8 5 1 0 3 A -1 2, M B 8 5 1 0 3 A -1 5 MÛS 65,536 x 8-Bit Dynamic RAM Module D e s c rip tio n The Fujitsu MB85103A is a 64K x 8 dynam ic RAM high density mem ory m odule. It c o n sists o f e ig h t MB8264A DRAMs in 18-pad LCC packages m ounted on a 22-pin m u ltila yer ceram ic substrate. |
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MB85103A MB8264A 18-pad 22-pin MDL-22S-CC02) | |
Contextual Info: Preliminary M O S • M M e m o r ie s B 8 2 6 4 A - 1 2 - W , M ^ F U JIT S U B 8 2 6 4 A - 1 5 - W N M O S 65,536-Bit Dynamic Random Access Mem ory W ith W ide Tem perature Range Description The MB8264A-W is a 64K x 1 dynam ic RAM intended for operation |
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536-Bit MB8264A-W -12-W B8264A -15-W | |
Contextual Info: P re lim in a re F U JIT SU • M B 8 5 1 0 1 A -1 0 , M B 8 5 1 0 1 A -1 2 , M B 8 5 1 0 1 A -1 5 MOS 65,536 X 4-Bit Dynamic RAM Module D e s c rip tio n The Fu jitsu MB85101A is a 64K x 4 d ynam ic RAM high density m em ory m odule. It c o n sists of fo u r MB8264A ORAMs in 18-pad |
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MB85101A MB8264A 18-pad 22-pin 22-Lead MDL-22S-CC01) | |
AK41128
Abstract: AK42064
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150ns AK41128 AK42064 | |
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
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KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL | |
Contextual Info: NN511662 series EDO Hyper Page Mode CMOS 64K x 16bit Dynamic RAM N PN > a< DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech |
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NN511662 16bit NN511662L 00Q153fl NNS11662 NN511662XX | |
mcm6665
Abstract: MC6809E A7 B14 MC68B09E mc6821 16k x 1 ram vdg 6847 details MCM-4116 sn74ls244 motorola
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SN74LS783/MC68B3 SN74LS785 MC6809E MC6847 SN74LS783/MC6883 LS785 MCM68364) MC6809E, MC6800, mcm6665 MC6809E A7 B14 MC68B09E mc6821 16k x 1 ram vdg 6847 details MCM-4116 sn74ls244 motorola | |
KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
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KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z | |
KM68512
Abstract: 12BKX8 km6865b
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010/J/T KM68512 12BKX8 km6865b | |
KM424C256Z
Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
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KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ | |
NN511662Contextual Info: NN511662 series EDO Hyper Page Mode CMOS 64Kx 16bit Dynamic RAM NPN/A> DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech |
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NN511662 16bit NN511662L G0Q153Ö NNS11662 NN511662XX | |
Contextual Info: a F in a l Am2964B Advanced Micro Devices Dynamic Memory Controller DISTINCTIVE CHARACTERISTICS • • • Dynamic Memory Controller for 16K and 64K MOS dynamic RAMs 8 -Bit Refresh Counter for refresh address generation, has clear input and terminal count output |
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Am2964B | |
LH2464-12
Abstract: LH2464-10 lh2464 dynamic ram nmos 18 pins LH2464-15 64k nmos dynamic ram TOED30
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LH2464 18-pin, 300-mil DIP18-P-300) LH2464-10 LH2464-12 LH2464-10 dynamic ram nmos 18 pins LH2464-15 64k nmos dynamic ram TOED30 | |
23c2100
Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
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KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15 |