MT42C4064 Search Results

Contextual Info: |U |IC R O N MT42C4064 VRAM 64Kx4 DRAM WITH 256 X 4 SAM • • • • • • • • • • • • Industry standard pinout, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS

MT42C4064

Abstract: 0041478 mt4067 MT42
Contextual Info: MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP tD- 11 ) sc i 1 * SDQ1 2 SDQ2Í 3 T r /ü ë î 4 DQ1 5 DQ2C ME/WE 7 RAS E8 A6 C9 A5C 10

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

Contextual Info: IC R 1 MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP (D- 11 ) sci [ FEATURES • • • • • • • • • • • • • 1 *

Contextual Info: 1 '- MICRON TECHNOLOGY INC 17E D • blllSMT 000177b E ■ ' MICRON ■ MT42C4064 883C TECHMOCOGY INC ■ T - H t- z v n MILITARY VRAM 64K X 4 DRAM with 256 X 4 SAM ! AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-89952 •

Contextual Info: r AU ST IN S E M I C O N D U C T O R INC bGE ]> TÜQ2117 DGODITM T77 « A U S T MT42C4064 883C 64K X 4 VRAM M I C R O N . T - '- l f c - 'î - V Z û MILITARY VRAM 64K X 4 DRAM WITH 256 X 4 SAM PIN ASSIGNMENT Top View • MIL-STD-883, Class B 24-Pin DIP

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

64kx4 DRAM

Abstract: marking WMM IC-012 MT42C4064 T-46 00024B1 TS PQ4 24
Contextual Info: MICRON TECHNOLOGY INC 3ÔE D . li^ .i m blllSM^ 000247b b IMRN r~EV ¿ -2 3 - 3 ? n if i» g is is g l ¿ •ù -i 64Kx4 DRAM WITH 256 X 4 SAM VRAM • • • • Industry standard pinout, tim ing and functions H igh performance CMOS silicon gate process

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

Contextual Info: MICRON MT42C8127 VRAM 128Kx8 DRAM WITH 256 X 8 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS

Contextual Info: .¡AN a a ¡991 MICRON I M T42C8127 KCMHOIOCT ML 128K x 8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply

Contextual Info: I^IICRON MT42C4255 VRAM 256K X 4 DRAM WITH 512x4 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS

Contextual Info: PRELIMINARY MICRON MT42C4256 883C AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-89497, Class M • JAN 5962-89497, Class B • MIL-STD-883, Class B 28L/400 CDIP SC [ 1 SDQ1 [ 2 FEATURES • • • • • • • • • •

Contextual Info: MICRON TECHNOLOGY INC 3ÖE D blllSHI G0G2S72 2 IMRN T -H & -2 Z -3 7 128Kx8 DRAM WITH 256 X 8 SAM VRAM • • • • • • • • • • • Industry standard pinout, tim ing and functions H igh perform ance CMOS silicon gate process Single +5V ±10% pow er supply

SP 1191

Abstract: MT4C4256 TNC 24 mk 2 US Electric 45 U-RAI MT42C4064 TE55
Contextual Info: JAM 2 8 M IC R O N • MT42C4255 IICHNOKX.Y »NC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS

MAS 10 RCD

Abstract: 42c4255 fast page mode dram controller MT4C4256 vram dual port MT42C4064 SCD-026
Contextual Info: CR M T42C 4255 VRAM 256K X 4 DRAM WITH 512 X 4 SAM • • • • • • • • • • • In d u stry sta n d ard p inout, tim in g a n d functions H ig h perform ance CM OS silicon gate process Single +5V ±10% p o w e r su p p ly In p u ts a n d o u tp u ts are fully TTL a n d CMOS

Altra SAM

Abstract: SF 338 cwo JAGR
Contextual Info: MICRON TECHNOLOGY INC IME D t l l l S M I DQDllfl? S PRELIM IN A R Y T -% -2 3 -3 1 VRAM 128K X 8 DRAM with 256 X 8 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View Industry standard pin-out tim ing, an d functions H igh perform ance CMOS silicon gate process

Contextual Info: •.'MICRON T E C H N O L O G Y INC 3ÔE » bl11541 GDO^bOb 4 ■ ■ FIRN PRELIMINARY 7 ^ -2 3 -3 7 VRAM 128K X 8 DRAM WITH 256 X 8 SAM • • • • • • • • • • • Industry standard pinout, timing and functions High-performance CMOS silicon gate process

Contextual Info: MICRON TECHNOL OGY INC 17E D biiisMT aooiôoa t • ADVANCE RON MT42C4256 883C MILITARY VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • Industry standard pin-out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply

MAS 10 RCD

Abstract: SMA marking code LG fast page mode dram controller MT42C4064 MT4C4256
Contextual Info: M T 42C 8127 C Z F 3 0 IM 128K X 8 DRAM WITH 256 X 8 SAM VRAM • • • • • • • • • • • In d u stry sta n d a rd p in o u t, tim ing a n d functions H igh perform ance CMOS silicon gate process Single +5V ±10% p o w e r su p p ly In p u ts a n d o u tp u ts are fully TTL a n d CMOS

MAS 10 RCD

Abstract: marking CODE 7Ls Model MAS 10 RCD marking 7Ls W42C MT42C4064 MT4C4256 circuit diagram of o general split ac
Contextual Info: .¡AN a a ¡991 MICRON • M T42C8127 I t CMHOt OCT ML 128K x8 DRAM with 256 x 8 SAM VRAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single+5V ±10% power supply

Contextual Info: 3flE D M I CR ON T E C H N O L O G Y INC '• blllS^ 0 0 0 2 5 3 b *î « U R N PRELIMINARY ■TN¿Éfi- nfr ftM-^il- < T -% -2 3 -3 7 VRAM 256K X 4 DRAM WITH 512 X 4 SAM • • • • « • • • • • • Industry standard pinout, timing and functions

Contextual Info: JM 2 8 W9i MICRON • MT42C4255 IIC H N O K X .Y INC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES • • • • • • • • • • • Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply

MT42C4064

Contextual Info: MICRO N T E C H N O L O G Y INC 5SE D • D G 0 5 7 b b Mñb H M R N UiT42C4064 883C 1 Ô4K x 4 VRAM 1 |W |iC = R O S ! MILITARY VRAM 64K x 4 DRAM WITH 256 x 4 SAM PIN ASSIGNMENT (Top View • MIL-STD-883, Class B 24-Pin DIP (D-11) FEATURES • • •