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    7.2V Price and Stock

    Flip Electronics MCF5272VM66

    IC MCU 32BIT 16KB ROM 196MAPBGA
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    DigiKey MCF5272VM66 Tray 22,000 20
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    Panasonic Electronic Components ERJ-PB3B8872V

    RES SMD 88.7K OHM 0.1% 1/5W 0603
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    DigiKey ERJ-PB3B8872V Reel 20,000 5,000
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    ERJ-PB3B8872V Cut Tape 11,202 1
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    Panasonic Electronic Components ERA-3AEB3572V

    RES SMD 35.7KOHM 0.1% 1/10W 0603
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    DigiKey ERA-3AEB3572V Reel 15,000 5,000
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    ERA-3AEB3572V Cut Tape 798 1
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    Master Electronics ERA-3AEB3572V 5,000
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    Ozdisan Elektronik ERA-3AEB3572V
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    Panasonic Electronic Components ERJ-3RBD1472V

    RES 14.7K OHM 0.5% 1/10W 0603
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    DigiKey ERJ-3RBD1472V Reel 10,000 5,000
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    ERJ-3RBD1472V Cut Tape 1,360 1
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    Master Electronics ERJ-3RBD1472V
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    Panasonic Electronic Components ERJ-UP3F1272V

    RES 12.7K OHM 1% 1/4W 0603
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    DigiKey ERJ-UP3F1272V Cut Tape 4,990 1
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    Find more 7.2V price and stock on Findchips.com

    7.2V Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    72V01 Integrated Device Technology 512 x 9 AsyncFIFO, 3.3V Original PDF
    72V01L15J Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 15NS 32-PLCC Original PDF
    72V01L15J8 Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 15NS 32-PLCC Original PDF
    72V01L15JG Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 15NS 32-PLCC Original PDF
    72V01L15JG8 Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 15NS 32-PLCC Original PDF
    72V01L25J Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 25NS 32-PLCC Original PDF
    72V01L25J8 Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 25NS 32-PLCC Original PDF
    72V01L25JGI Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO 512X9 25NS 32-PLCC Original PDF
    72V01L25JGI8 Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO 512X9 25NS 32-PLCC Original PDF
    72V01L25JI Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 25NS 32-PLCC Original PDF
    72V01L25JI8 Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 25NS 32-PLCC Original PDF
    72V01L35J Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 35NS 32-PLCC Original PDF
    72V01L35J8 Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC ASYNCH 512X9 35NS 32-PLCC Original PDF
    72V02 Integrated Device Technology 1K x 9 AsyncFIFO, 3.3V Original PDF
    72V02L15J Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 15NS 32PLCC Original PDF
    72V02L15J8 Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 15NS 32PLCC Original PDF
    72V02L15JG Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 15NS 32PLCC Original PDF
    72V02L15JG8 Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 15NS 32PLCC Original PDF
    72V02L25J Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 25NS 32PLCC Original PDF
    72V02L25J8 Integrated Device Technology Integrated Circuits (ICs) - Logic - FIFOs Memory - IC FIFO ASYNCH 1KX9 25NS 32PLCC Original PDF
    ...

    7.2V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    22AWGX2C

    Abstract: XC-600018 PRI 120VAC, 60HZ
    Text: AC Adapter 412-205054 41 1.614 43 (1.693) 58 (2.283) Nameplate DIMENSIONS: mm (In.) 22#AWGx2C UL/2468 1850 +50 -10 (72.8 Specifications for Primary: • Input Voltage 120VAC, 60Hz • DC Resistance +/- 15%: 270 OHM Specifications for Secondary Output: • Open Circuit Voltage +/- 5%: 7.2VAC


    Original     		PDF UL/2468 120VAC, 500mA 500VDC 1500VAC 500VAC 22AWGX2C XC-600018 PRI 120VAC, 60HZ

    RA07M1317MS

    Abstract: 135175MHz ra07m1317msa
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original     		PDF RA07M1317MSA 135-175MHz RA07M1317MSA 175-MHz RA07M1317MS 135175MHz

    450W heatsink

    Abstract: PAF450F280-12 PAF450F280-24 PAF450F280-28 PAF450F280-48 PAF600F280-12 PAF600F280-24 PAF600F280-28 PAF-F280 DC-DC 200-400V
    Text: PAF-F280 Series 200V to 400VDC Input Full brick DC-DC Converters ‹ ‹ ‹ ‹ ‹ Output Voltages from 7.2V to 57V 450W to 600W Output Power Current Share Operation to 100°C Baseplate Wide Adjustable Output Range Key Market Segments & Applications Servers & Rail Systems


    Original     		PDF PAF-F280 400VDC 00-700W 00-450W 00-400V 380VDC 00-1000W, com/lp/products/paf400-series PAF600F280-12 450W heatsink PAF450F280-12 PAF450F280-24 PAF450F280-28 PAF450F280-48 PAF600F280-24 PAF600F280-28 DC-DC 200-400V

    RA03M8894M

    Abstract: RA03M8894M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to


    Original     		PDF RA03M8894M 889-941MHz RA03M8894M 941-MHz RA03M8894M-101

    DB35T

    Abstract: mitsubishi lot code RF MOSFET MODULE MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz transistor marking zg Mitsubishi transistor rf final H46S RA02M8087MD RA02M8087MD-101 MOSFET AMPLIFIER For MOBILE RADIO 869 MHz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the


    Original     		PDF RA02M8087MD 806-869MHz 34dBm RA02M8087MD 34dBm 16dBm 300mA -26dBc DB35T mitsubishi lot code RF MOSFET MODULE MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz transistor marking zg Mitsubishi transistor rf final H46S RA02M8087MD-101 MOSFET AMPLIFIER For MOBILE RADIO 869 MHz

    RA07M3340M

    Abstract: RA07M3340M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to


    Original     		PDF RA07M3340M 330-400MHz RA07M3340M 400-MHz RA07M3340M-101

    RA07M0608M-101

    Abstract: RA07M0608M Pin-30mW RA07M0608
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to


    Original     		PDF RA07M0608M 66-88MHz RA07M0608M 88-MHz RA07M0608M-101 Pin-30mW RA07M0608

    RD12MVP1

    Abstract: RD12MVS1 2040D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V


    Original     		PDF AN-VHF-034-B RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/17meter) RD12MVS1 2040D

    RA07M4452M

    Abstract: generator 4.20 mA
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4452 RA07M4452M 07M4452MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier


    Original     		PDF RA07M4452M RA07M4452MSA 07M4452 440-520MHz RA07M4452MSA 520-MHz RA07M4452M generator 4.20 mA

    RD07MUS2B

    Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V


    Original     		PDF AN-900-039-A RD07MUS2B 763-870MHz RD07MUS2B: 084YH-G" RD07MUS2B 870MHz 250mA characteristic1JA01 GRM1882C1H101JA01 Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M

    GRM1882C1H100JA01D

    Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V


    Original     		PDF AN-900-040-A RD01MUS1 RD07MUS2B 763-870MHz RD07MUS2B: 086ZE-G" RD01MUS1: RD07MUS2B 250mA GRM1882C1H100JA01D GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D

    RD07MUS2B

    Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V


    Original     		PDF AN-VHF-047-A RD07MUS2B RD07MUS2B: 083YH-G" RD07MUS2B 175MHz 250mA 2302S 2306C RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E

    RD01MUS1

    Abstract: adj 2576
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V


    Original     		PDF AN-UHF-060-A RD01MUS1 RD01MUS1: 135MHz 100mA 527MHz 0mm/50 AN-UHF-060 adj 2576

    KF1502-GT10A

    Abstract: KF50-HDA thermal printhead
    Text: KF1502-GT10A Printheads Compact low voltage thick film thermal printhead 6dots / mm KF1502-GT10A These compact, lightweight printheads have low power requirements and are intended for ECR and mobile applications. Drawing 7.2V, a maximum print speed of 2 inches per second is possible.


    Original     		PDF KF1502-GT10A KF1502-GT10A KF50-HDA thermal printhead

    RA07M1317M

    Abstract: RA07M1317M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original     		PDF RA07M1317M 135-175MHz RA07M1317M 175-MHz RA07M1317M-01

    TRS-RLD-2240-3-12-480

    Abstract: HI-POT B-8
    Text: 1 2 3 4 5 6 7 SPECIFICATIONS Input Voltage Rating: Series Output Volt 5-8 : A Parallel Output Volt(5,7-6,8): HI-POT: B 8 9 480V 50Hz 14.4VAC±5%@0mA 12.6VAC±5%@200mA 7.2VAC±5%@omA 6.3VAC±5%@400mA Pri. To Sec., Pri. To Core 2500VAC/5mA/3Sec Sec. To Sec., Sec. To Core 1500VAC/5mA/3Sec


    Original     		PDF 200mA 400mA 2500VAC/5mA/3Sec 1500VAC/5mA/3Sec TRS-RLD-2240-3-12-480 TRS-RLD-2240-3-12-480 HI-POT B-8

    MOSFET TOSHIBA 2015

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step


    Original     		PDF 2SK3476 100mA, 300mA, 500mA, 700mA, 900mA MOSFET TOSHIBA 2015

    GP 839 DIODE

    Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.


    Original     		PDF RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839

    LTC4440-5

    Abstract: LTC1154
    Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current


    Original     		PDF LTC4444 LTC4444 LTC4449 LTC4441/LTC4441-1 LTC1154 4444fb LTC4440-5 LTC1154

    RA07M4452MSA

    Abstract: RA07M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4452MSA RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to


    Original     		PDF RA07M4452MSA 440-520MHz RA07M4452MSA 520-MHz RA07M

    Mitsubishi transistor rf final

    Abstract: RA03M4547MD 1538d RA03M4547MD-101 POUT38
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4547MD RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4547MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the


    Original     		PDF RA03M4547MD 450-470MHz 38dBm RA03M4547MD 38dBm 19dBm -25dBc 35dBm Mitsubishi transistor rf final 1538d RA03M4547MD-101 POUT38

    RA03M4043MD-101

    Abstract: RA03M4043MD
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4043MD RoHS Compliance , 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4043MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the


    Original     		PDF RA03M4043MD 400-430MHz 38dBm RA03M4043MD 38dBm 19dBm -25dBc 35dBm RA03M4043MD-101

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M68763M 223-226MHZ, 7.2V, 5.3W, FM PORTABLE RADIO D im ensions in mm OUTLINE DRAWING BLOCK DIAGRAM PIN: © < o o © P in © vbb RF IN PU T 1st. DC S U P PLY BASE BIAS S U P PLY © V C C 2 2nd. DC S U P PLY 35±1 ©PO RF O U TP U T


    OCR Scan     		PDF M68763M 223-226MHZ,

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M68763L 180-200MHZ, 7.2V, 5.3W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm 1 LD O +l PIN: © < o o 0 P in © vbb RF IN PU T 1st. DC S U P PLY BASE BIAS S U P PLY © V C C 2 2nd. DC S U P PLY ©PO RF O U TP U T


    OCR Scan     		PDF M68763L 180-200MHZ,