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    72N20 Search Results

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    72N20 Price and Stock

    Littelfuse Inc IXFP72N20X3

    MOSFET N-CH 200V 72A TO220
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    DigiKey IXFP72N20X3 Tube 796 1
    • 1 $8.26
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    Newark IXFP72N20X3 Bulk 300
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    RS IXFP72N20X3 Bulk 8 Weeks 50
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    Littelfuse Inc IXFA72N20X3

    MOSFET N-CH 200V 72A TO263AA
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    DigiKey IXFA72N20X3 Tube 437 1
    • 1 $8.4
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    Newark IXFA72N20X3 Bulk 300
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    RS IXFA72N20X3 Bulk 8 Weeks 50
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    Littelfuse Inc IXFQ72N20X3

    MOSFET N-CH 200V 72A TO3P
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    DigiKey IXFQ72N20X3 Tube 304 1
    • 1 $8.95
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    Newark IXFQ72N20X3 Bulk 300
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    RS IXFQ72N20X3 Bulk 8 Weeks 30
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    IXYS Corporation IXFK72N20

    MOSFET N-CH 200V 72A TO264AA
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    DigiKey IXFK72N20 Tube
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    IXYS Corporation IXTH72N20

    MOSFET N-CH 200V 72A TO247
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    DigiKey IXTH72N20 Tube 30
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    Mouser Electronics IXTH72N20
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    72N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    72N2

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH 72N20 IXTT 72N20 High Current Power MOSFET VDSS ID25 = 200 V = 72 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS


    Original
    PDF 72N20 O-247 O-268 728B1 123B1 728B1 065B1 72N2

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS 72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF 72N20 80N20 80N20 IXFK72N20 IXFK80N20 125OC Figure10.

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS 72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF IXFK72N20 IXFK80N20 72N20 80N20 125OC Figure10.

    125OC

    Abstract: IXFK72N20 IXFK80N20
    Text: HiPerFETTM Power MOSFETs VDSS 72N20 IXFK80N20 ID25 RDS on 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF IXFK72N20 IXFK80N20 72N20 80N20 125OC Figure10. 125OC IXFK72N20 IXFK80N20

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    80N20

    Abstract: TEA 2029 A
    Text: IÖIXYS HiPerFET Power MOSFETs v p DSS ^D25 DS on 200 V 72 A 35 mû 200 V 80 A 30 m a t < 200 ns 72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VOSS Tj = 2 5 °C tO l50°C


    OCR Scan
    PDF IXFK72N20 IXFK80N20 72N20 80N20 80N20 25value IXFK72N20 TEA 2029 A

    TOp-264 vg

    Abstract: No abstract text available
    Text: □ IXYS Preliminary data V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS VGSM Continuous ±20


    OCR Scan
    PDF 72N20 80N20 O-264 IXFK72N20 IXFK80N20 TOp-264 vg

    72N2

    Abstract: diode 253 SMD-264 TO-264-aa 80N20
    Text: OIXYS Preliminary data vDSS HiPerFET Power MOSFETs ^D25 RDS on 200 V 72 A 35 mQ 200 V 80 A 30 mQ t < 200 ns 72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t„ Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C


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    PDF IXFK72N20 IXFK80N20 72N20 80N20 80N20 O-264 UL94V-0 IXFK72N2Ô 72N2 diode 253 SMD-264 TO-264-aa