74106 Search Results

64kx4

Abstract: HY51C264-12 strobe w24 64Kx4-Bit
Contextual Info: ▲ HY51C264 64K x4-Bit Dual Port CMOS RAM HYUNDAI SEMICONDUCTOR OCTOBER 1986 DESCRIPTION The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE

Contextual Info: JUL 09 '93 09:ISAM MICROCHIP SEP 0 7 199? S s ^A M A / M TA4111Q ic r o c h ip PC Mouse and TVackball Controller IC FEATURES DESCRIPTION • Single chip two button mouse or trad<bail controller The MTA41110 is tite heartof a simple. low cost mouse or trackball solution. It can be configured »operate as

Contextual Info: PRELIMINARY Æ HYUNDAI iíB L SEMICONDUCTOR HY62C88 16,384x4-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C88 is a high speed, low power, 16,384x4-bit static CMOS RAM fabricated using high-performance HYCMOS process technology. This high reliability process coupled w ith in­

F91300 MASSY

Contextual Info: MICROCHIP TECHNOLOGY INC blE D • blD32Dl 000b514 HTT ■fICHP T - 4 & - U - Z 7 28C16A & M icroch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation

F-91300

Abstract: D-8012 24LH02 F91300 MASSY
Contextual Info: m i 7 1992 24LH02 M icrochip 2K CMOS Serial EEPROM - High Endurance FEATURES DESCRIPTION • Single supply with operation from 6.0 V down to 2.0 V • Low power CMOS technology — 3 mA active current at 6.0 V — 50 jiA standby current at 6.0 V — 15 jiA standby current at 2.0 V

ka 75000

Abstract: HY5164-15 HY5164-12 HYUNDAI car Hyundai Semiconductor HY5164 7500 GI 536 POWER 300MIL HY5164-10
Contextual Info: HYUNDAI H Y 516 4 6 5 ,5 3 6 x 1-Bit D y n a m ic R A M .SEM IC O N DUCTO R OCTOBER 1986 DESCRIPTION T he HY5164 is a high speed 65,536 bit dynam ic R andom Access M emory. Fast page m ode has the features of fast usable speed, low pow er, and a typical soft error rate of less than 10 Failures In

ic 74104

Abstract: 74101 ic ic 74102 SBFP405D 74102 ic
Contextual Info: Ordering number : ENN7410 SBFP405D NPN Epitaxial Planar Silicon Transistor SBFP405D UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • • Package Dimensions Low noise : NF=1.25dB typ f=1.8GHz . High cutoff frequency : fT=25GHz typ(VCE=3V).

PICSTART-16C

Abstract: ESC tower pro PICSTART eprom programmer PIC16 example codes PIC16C5X PIC16C64 PIC16C74 PIC16CXX Display Engineering Services
Contextual Info: PICSTART -16C DEVICE PROGRAMMER USER'S GUIDE “Information contained in this publication regarding device applications and the like is intended by way of suggestion only. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information. Use of Microchip’s

UCD74106

Contextual Info: 74106 www.ti.com SLUSAJ5A – MAY 2011 – REVISED DECEMBER 2012 Synchronous-Buck Power Stage Check for Samples: 74106 FEATURES 1 • • • • • • • • • DESCRIPTION Fully Integrated Power Switches With Drivers for Single and Multiphase Synchronous Buck

74ls82

Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
Contextual Info: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte­ grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all

ic 74102

Abstract: ZO 103 MA 75 623 74101 ic 74102 ic IC 74103 ic 74104 SBFP405D zo 103 ma 75 607 74106
Contextual Info: 注文コード No. N 7 4 1 0 SBFP405D 三洋半導体データシート N SBFP405D 特長 NPN エピタキシァルプレーナ型シリコントランジスタ UHF ~ C バンド低雑音増幅発振用 ・低雑音である：NF=1.25dB typ f=1.8GHz 。

7408, 7404, 7486, 7432 use NAND gate

Abstract: JLCC-68 ci 74386 cI 74150 jLCC68 74153 full adder 7402, 7404, 7408, 7432, 7400 74106 sln 7404 LCC-64
Contextual Info: MB65XXXX MB66XXXX MB67XXXX AV CMOS SERIES GATE ARRAYS F U JIT S U June 1986 Edition 2.0 DESCRIPTION The Fujitsu MB65xxxx/M B66xxxx/M B67xxxx family are a series o f high perform ance CMOS gate arrays designed to provide high density, low pow er, and operating speeds th a t are com parable to standard bipolar logic. The A V M 865xxxx series is an ideal

16c71

Contextual Info: MICROCHIP TECHNOLOGY INC blE & T> m blG32Ql 00Q5571 277 • H C H P P IC M icrochip 1 6 C 71 8-Bit CMOS EPROM Microcontroller with A/D Converter CMOS technology FEATURES High Perform ance RISC-like CPU • Only 35 single word instructions to learn • All single cycle instructions 200 ns except for

Contextual Info: PICI 6C84 M ic r o c h ip 8-Bit CMOS EEPROM Microcontroller FIG URE A - PIN CONFIGURATION FEATURES High Perform an ce R ISC -like C P U • Only 35 single word instructions to learn • All instructions single cycle 400ns except for pro­ gram branches which are two-cycle

tca 4401

Abstract: HY5164-15
Contextual Info: OCTOBER 1986 DESCRIPTION, FEATURES The HY5164 is a high speed 65,536 bit dynamic Random Access Memory. Fast page mode has the features of fast usable speed, low power, and a typical soft error rate of less than 10 Failures In Time FITfe . The HY5164 is ideally suited for ap­

hyundai

Abstract: 536X4
Contextual Info: PRELIMINARY A HY51C464 HYUNDAI SEMICONDUCTOR 65,536x4-Bit CMOS Dynamic RAM AUGUST 1986 The HY51C464 offers a maximum standby current of 100 n A when RASs Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re­

741 CN

Contextual Info: REVISIONS SD ER 37880 HVN 08/02/99 -f* CN 37908 E CD HVN 10/01/99 1 CN 37978 D HVN 02/03/00 CN 38134 E HVN 12/06/00 FUTS. TWO 2 PLACES 7410-6S NOTES: 1. FOR USE WITH LUCENT 734 (RFQ 199800014) CABLE. 2. PRODUCT TO BE MADE FOR SBC CORP. & ITS DESIGNATED DISTRIBUTORS ONLY.

HY27C64-20

Abstract: HY27C64-15 HY27C64-30 IN3064
Contextual Info: HY27C64 Æ HYUNDAI SEMICONDUCTOR DESCRIPTION 8192x8-Bit CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where

Hyundai Semiconductor

Abstract: hy27c64-20 HY27C64A
Contextual Info: HY27C64 Æ HYUNDAI S E M IC O N D U C T O R DESCRIPTION 8192x8-B it CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where

LT3973-3.3

Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
Contextual Info: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7

744040

Abstract: scx6206 74589 744020 Flip-Flop 7471 744017 744017 counter sn 74373 scx6218 74395
Contextual Info: July 1985 SCX m icroC M O S G ate A rray Fam ily A pplication G uide TABLE OF CONTENTS 1.0 General Description . 2 2.0 Product Features. 2 Enhanced Product Features. . 2

Contextual Info: m i 7 1992 24LH02 M icrochip 2K CMOS Serial EEPROM - High Endurance FEATURES Single supply with operation from 6.0 V down to 2.0 V Low power CMOS technology — 3 mA active current at 6.0 V — 50 jiA standby current at 6.0 V — 15 jiA standby current at 2.0 V

tca 4401

Abstract: 5164-10 K2395 R/tca 4401
Contextual Info: HY5164 A HYUNDAI 6 5 ,5 3 6 x 1-B it D y n a m ic R A M -¿ ^ S E M IC O N D U C T O R OCTOBER 1986 DESCRIPTION FEATURES The HY5164 is a high speed 65,536 bit dynamic Random Access Memory. Fast page mode has the features of fast usable speed, low power, and a

Contextual Info: M icrochip P I C 1 6 C 7 1 8-Bit CMOS EPROM Microcontroller with A/D Converter FEATURES High Performance RISC-like CPU • Only 35 single word instructions to learn • All single cycle instructions 200 ns except for program branches which are two-cycle