74N20 Search Results

Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFC 74N20P VDSS ID25 RDS on Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated trr = = = ≤ 200 35 36 200 V A Ω mΩ ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings

74n20

Abstract: 36gd
Contextual Info: PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings

74N20P

Contextual Info: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A ≤ 34 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGSS VGSM Continuous

Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 68N20 IXFH/IXFT 74N20 RDS on 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings ID25 Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V

74N20P

Contextual Info: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω ≤ 34 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGSS VGSM Continuous

Contextual Info: v. High Current MegaMOS FET IXTK 74N20 VDSS D 25 RDS on N-Channel Enhancement Mode = 200 V = 74 A = 35 mii TO-264 AA ' DGR T, = 2 5°C to 150°C; f^s= 1.0 Mfì es Continuous G SM Transient D 25 200 ±20 ±30 Tc = 25° C Tc = 2 5 °C, pulse width limited byJ TJM

Contextual Info: VDSS ID25 PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM RDS on trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings

74N20

Abstract: IXFH68N20 IXFK72N20 IXFK80N20 68N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 68N20 IXFH/IXFT 74N20 RDS on 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings ID25 Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V

Contextual Info: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω = 34 mΩ RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous

74n20

Abstract: PLUS220SMD
Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated = = = ≤ 200 74 34 200 V A Ω mΩ ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings

Contextual Info: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω = 34 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25

74N20P

Abstract: PLUS220SMD
Contextual Info: PolarHTTM HiPerFET IXFH 74N20P IXFV 74N20P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated trr IXFV 74N20PS RDS on Symbol Test Conditions VDSS TJ = 25° C to 175° C 200 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 200

Contextual Info: a ixY S Advanced Technical Information IXTK 74N20 High Current MegaMOS FET V DSS = 200 V ID = 74 A 25 RDS on = 35 mQ N-Channel Enhancement Mode TO-264 AA Maximum ratings Symbol Test conditions V DSS ^ = 25°C to 150°C vDGR ^ = 25°C to 150°C; Rgs VGS

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS IXFH/IXFT68N20 IXFH/74N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

mq68

Contextual Info: OIXYS VDSS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 200 V 200 V RDS on ^D25 74 A 35 mQ 68 A 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VOSS Tj = 25 °C to150 °C 200 V V™ Tj = 25°C to 150°C; RGS= 1 .0 M il

Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH/IXFT68N20 IXFH/74N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings TO-247 AD IXFH V DSS Td = 25°C to 150°C 200 V vDGR Td = 25°C to 150°C; RGS = 1 M£i

Contextual Info: □IXYS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 V DSS ^D25 200 V 200 V 74 A 68 A D DS on 35 mQ 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Maximum ratings Test conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS=1.0 M£2

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal

11n80

Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
Contextual Info: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088

6N80

Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68

DIODE 1334

Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205

52N30

Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70