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    6N90 Search Results

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    6N90 Price and Stock

    STMicroelectronics STD6N90K5

    MOSFET N-CH 900V 6A DPAK
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    DigiKey STD6N90K5 Cut Tape 6,872 1
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    STD6N90K5 Digi-Reel 6,872 1
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    Mouser Electronics STD6N90K5 1,715
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    STMicroelectronics STD6N90K5 1,715 1
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    Rochester Electronics LLC FQAF6N90

    MOSFET N-CH 900V 4.5A TO3PF
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    DigiKey FQAF6N90 Tube 1,785 222
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    STMicroelectronics STB16N90K5

    MOSFET N-CH 900V 15A D2PAK
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    DigiKey STB16N90K5 Cut Tape 1,360 1
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    STB16N90K5 Digi-Reel 1,360 1
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    Avnet Americas STB16N90K5 Ammo Pack 1
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    Mouser Electronics STB16N90K5 996
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    Newark STB16N90K5 Cut Tape 3,200 1
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    STMicroelectronics STB16N90K5 996 1
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    STMicroelectronics STP6N90K5

    MOSFET N-CH 900V 6A TO220
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    DigiKey STP6N90K5 Tube 648 1
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    TME STP6N90K5 1
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    STMicroelectronics STW6N90K5

    MOSFET N-CH 900V 6A TO247
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    DigiKey STW6N90K5 Tube 449 1
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    Avnet Silica STW6N90K5 1,470 17 Weeks 30
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    Find more 6N90 price and stock on Findchips.com

    6N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N90Z Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a


    Original     		PDF 6N90Z 6N90Z 6N90Zat QW-R502-953

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N90 Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a


    Original     		PDF O-220F O-220F1 O-220 O-262 QW-R502-492

    6N90

    Abstract: N100
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF 6N100 O-247 O-204 10Source 100ms 6N100 6N90 N100

    Untitled

    Abstract: No abstract text available
    Text: 6N90 UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1  TO-220 DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a


    Original     		PDF O-220 O-220F O-220F1 QW-R502-492

    6N90G

    Abstract: 6n90
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N90 Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a


    Original     		PDF O-220 O-220F O-220F1 QW-R502-492 6N90G 6n90

    6N90

    Abstract: IXFH6N100
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 6N90 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF 6N100 O-247 O-204 6N100 10Source 6N90 IXFH6N100

    6N90

    Abstract: N100 6n10 6n100
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 6 A IDM T C = 25°C, pulse width limited by T JM


    Original     		PDF 6N100 O-247 O-204 6N90 N100 6n10 6n100

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N90 Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a


    Original     		PDF O-220F O-220F1 O-220 O-262 QW-R502-974

    6n90

    Abstract: 6N90G
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N90 Preliminary Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a


    Original     		PDF O-220 O-220F O-220F1 QW-R502-492 6n90 6N90G

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF 6N100 O-247 O-204 10Source 100ms 6N100

    6N90

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N90 Preliminary Power MOSFET 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum


    Original     		PDF O-220 O-220F O-220F1 QW-R502-492 6N90

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N90Z Preliminary Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a


    Original     		PDF 6N90Z 6N90Z O-220 O-262 QW-R502-974

    Untitled

    Abstract: No abstract text available
    Text: Standard Power MOSFET IXTH / IXTM 6N90 IXTH / IXTM 6N90A VDSS ID25 RDS on 900 V 900 V 6A 6A 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V VGS


    Original     		PDF 6N90A O-204 O-247

    MOSFET 6N100

    Abstract: 6n90 equivalent 6N90 transistor ixfh application note D-68623
    Text: IXFH 6N90 IXFM 6N90 IXFH 6N100 IXFM 6N100 VDSS HiPerFETTM Power MOSFET IXFH/FM 6N90 900 V IXFH/FM 6N100 1000 V ID25 RDS on trr 1.8 Ω 250 ns 2.0 Ω 250 ns 6A 6A N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions


    Original     		PDF 6N100 6N100 O-247 D-68623 MOSFET 6N100 6n90 equivalent 6N90 transistor ixfh application note

    Untitled

    Abstract: No abstract text available
    Text: v DSS HiPerFET Power MOSFETs ix f h /ix f m g n m IXFH/IXFM 6 N100 Symbol Test Conditions v ^ Voa« Tj = 25°C to 150°C; Vos Continuous ±20 V Transient ±30 V 6 A vesM •» ' dm dv/dt Tc Maximum Ratings = 25“C to 150°C 1 f RGS=1 M£2J \ 6N90 900 V


    OCR Scan     		PDF O-247 6N100

    mth6n90

    Abstract: 6n90
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M T H 6N 85 M T H 6N 90 M TM 6N85 M TM 6N90 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N -C h ann el Enhancem ent-M ode S ilic o n G ate T M O S TM O S POWER FETs 6 AMPERES These TM O S P ow er FETs are desig n ed fo r h ig h voltag e , high


    OCR Scan     		PDF MTH/MTM6N85, mth6n90 6n90

    6N90

    Abstract: 6N90A
    Text: IPIXYS Standard Power MOSFET IXTH/IXTM 6N90 IXTH/IXTM 6N90A VDSS ^D25 DS on 900 V 900 V 6A 6A 1.8 Q 1.4 Í2 D N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V ¥ dss T j =25°C to150°C 900 V VDQR Tj = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 900


    OCR Scan     		PDF 6N90A to150 O-247 O-204 O-204 O-247 IXTM6N90 IXTMGN90A 6N90

    h6n100

    Abstract: h6n90
    Text: n ix Y S HiPerFET Power MOSFETs IXFH /IXFM 6N90 IXFH / IXFM 6N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family V DSS ^D25 900 V 1000 V 6A 6A p DS on 1.8 Q 2.0 £2 yo 69 Symbol Test Conditions Maximum Ratings v DSS T j =25°C to 150°C


    OCR Scan     		PDF 6N100 6N100 IXFH6N100 IXFM6N100 h6n100 h6n90

    Untitled

    Abstract: No abstract text available
    Text: 1 □IXYS v* D S S Standard Power MOSFET IXTH/IXTM 6 N90 900 V IXTH/IXTM 6 N90A 900 V D ^D25 DS on 6A 6A 1.8 Q 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V woss ^ = 25°C to 150°C 900 V v DGR ^ = 25 °C to 150°C; RGS = 1 Mi2 900 V v es Continuous


    OCR Scan     		PDF O-204 O-247 O-204

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit