76413D Search Results

AN9321

Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
Contextual Info: 76413D3, 76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE 76413D3S 76413D3

76413DK8

Abstract: MARKING 59E HUFA76413DK8 HUFA76413DK8T
Contextual Info: 76413DK8 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

AN7254

Abstract: AN9321 AN9322 HUF76413D3 HUF76413D3S HUF76413D3ST TB334
Contextual Info: 76413D3, 76413D3S Data Sheet November 1999 File Number 4724.1 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE 76413D3S 76413D3

HUFA76413DK8T

Contextual Info: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

Contextual Info: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

Contextual Info: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

AN9321

Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334 55E-1
Contextual Info: 76413D3, 76413D3S Data Sheet December 2001 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE 76413D3S 76413D3 Features • Ultra Low On-Resistance

AN9321

Abstract: AN9322 HUF76413D3 HUF76413D3S HUF76413D3ST TB334
Contextual Info: 76413D3, 76413D3S Data Sheet December 2001 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE 76413D3S 76413D3 Features • Ultra Low On-Resistance

Contextual Info: 76413D3, 76413D3S TM Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE 76413D3S 76413D3

AN9321

Abstract: HUF76413D3 HUF76413D3S HUF76413D3ST TB334
Contextual Info: 76413D3, 76413D3S Data Sheet November 1999 File Number 4724.1 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 13D UF76 3D3 bjec 0A, V, 56 m, Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA GATE SOURCE 76413D3S

95E-2

Abstract: AN9321 AN9322 HUF76413D3 HUF76413D3S HUF76413D3ST TB334 Saber 65e3
Contextual Info: in t e 76413D3, 76413D3S r r ii November 1999 Data Sheet File Num ber 4724.1 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE • Ultra Low On-Resistance ‘ rDS(ON) = 0.049i2, VGS = 10V

76413DK8

Contextual Info: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

76413DK8

Abstract: HUFA76413DK8T
Contextual Info: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

3kv 27k

Abstract: schematic diagram lcd monitor advance 17 27k 3kv 32 inch LCD TV SCHEMATIC efd2124 circuit diagram tv monitor lcd advance capacitor 27k 3kv capacitor c1 220uF 3kv fuse lcd inverter board schematic
Contextual Info: FAN7313 LCD Backlight Inverter Drive IC Features Description „ High-Efficiency Single-Stage Power Conversion FAN7313 provides all the control functions for a series parallel resonant converter as well as a pulse width modulation PWM controller to develop a supply voltage.

Contextual Info: inter«! 76413D3, 76413D3S D a ta S h e e t N o v e m b e r 1999 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging U F ile N u m b e r 4 7 2 4 .1 lt r a liif r Features JED E C TO -2 51A A JE D E C T O -252A A DRAIN • Ultra Low On-Resistance

Contextual Info: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy