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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC tiHE D m 7U4142 256Kx4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: -8 Item • • • • • • • • • • • • -10 80ns 1 0 0 ns access time t R A c


    OCR Scan     		PDF 7U4142 256Kx4 150ns 180ns 28-PIN KM424C256

    MPS2907

    Abstract: MPS2907A PN2907A
    Text: SAM S UN G SEMICONDUCTOR INC IME D MPS2907A | 7U4142 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISITOR • Collector-Emitter Voltage: Vceo = 60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracteristic


    OCR Scan     		PDF cil14m2 MPS2907A 625mW MPS2907 T-29-21 150mA, 500mA, PN2907A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E ]> MMBTH17 B 7U4142 000^054 2 »StlGK NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation


    OCR Scan     		PDF 7U4142 MMBTH17 200MHz

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC 23E D 7U4142 OQOÖäOb 7 • T - £ 2 - 3 3- BUS CONTROLLER FOR 80286 MICROPROCESSORS KS82C288 FEATURES/BEN EFITS DESCRIPTIO N • Provides commands and control or local and system bus In 80286-based machines The 20-pin C M O S KS82G288 controls buses in 80286based computer systems. The Bus Controller provides


    OCR Scan     		PDF 7U4142 KS82C288 80286-based 20-pin KS82G288 80286based KS82C289 KS82C284 IEEE-796

    7m142

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D LM324 • 7U4142 POG'1372 S O S f l G K LINEAR INTEGRATED CIRCUIT QUAD LOW POWER OP AMP The LM324 of quad operational am plifiers are very low power operation, and can operate at supply voltages from 3 volts to 32 volts. FEATURES


    OCR Scan     		PDF LM324 7U4142 LM324 00V/m LM324N LM324D 7m142

    Opamp Voltage follower

    Abstract: XZ 068 c3875 KS0083 KS0103 KS0104
    Text: KS0103 CMOS DIGITAL INTEGRATED CIRCUIT 68 CHANNEL CO M M O N DRIVER FOR DOT M ATRIX LCD 80 QFP The K S 0 1 0 3 is a LCD driver LSI w hich is fabricated by low pow e r CM O S high voltage p ro ce ss tech n olo gy. This device co nsists of 6 8 bit bidirectional shift register, 6 8 bit level shifter and 6 8 bit 4-level


    OCR Scan     		PDF KS0103 KS0103 00E0775 Vdd-2/15 VDD-14/15 vdd-1/15 vdd-13/15 DD2D77t Opamp Voltage follower XZ 068 c3875 KS0083 KS0104

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC S3E D • 00002^ KM62256A/KM62256AL 1 ■ CMOS SRAM 3 2 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 60, 100, 120 ns max . • Low Power Dissipation Standby: 0.55mW (max.) Operating: 248mW (max.) • Low Data Retention Current: 50jiA (max.)


    OCR Scan     		PDF KM62256A/KM62256AL 248mW 50jiA 28-pin KM62256A/AL KM62256AVKM62256AL

    rbbb

    Abstract: No abstract text available
    Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF KM416V254DJ 256Kx16 DQ0-DQ15 rbbb

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SE MI CONDU CT OR INC Tfl KA3524 DE 7TL41M5 OO OMbSl b LINEAR INTEGRATED CIRCUIT REGULATOR PULSE WIDTH MODULATOR The KA3524 regulating pulse width modulator contains all of the control circuitry necessary to Implement switching regulators of either


    OCR Scan     		PDF KA3524 7TL41M5 KA3524 7U4142

    Untitled

    Abstract: No abstract text available
    Text: KM68257B CMOS SRAM 32K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) 2mA(Max.) Operating KM68257B-15 : 150mA (max.) KM68257B-20: 140mA (max.) KM68257B-25: 130mA (max.)


    OCR Scan     		PDF KM68257B KM68257B-15 150mA KM68257B-20: 140mA KM68257B-25: 130mA KM68257BP: 28-DIP-300 KM68257BJ

    Untitled

    Abstract: No abstract text available
    Text: KMM364E1600AK/AS KMM364E1680AK/AS DRAM MODULE KMM364E1600AK/AS & KMM364E1680AK/AS Fast Page with EDO Mode 16Mx64 DRAM DIMM based on 16Mx4, 4K & 8K Refresh, 5V FEATURES GENERAL DESCR IPTIO N CMOS 16Mx4bit DRAMs in SOJ/TSOP-II 400mii • Part Identification


    OCR Scan     		PDF KMM364E1600AK/AS KMM364E1680AK/AS KMM364E1680AK/AS 16Mx64 16Mx4, 16Mx4bit 400mii KMM364E1600AK KMM364E1600AS

    pixel clock generator ttl

    Abstract: No abstract text available
    Text: SAMSUNG ELECTR ONI CS INC M2E D KS82C670/671 BB 7 T b M m 2 000^470 S • SMGK Video Clock Generator P relim inary FEATURES • Single/Dual Clock output versions • Custom ROM programmed frequencies up to 100 MHz ■ "On-the-1ly,rfrequency selection • Separate on-chip Phase Locked Loops


    OCR Scan     		PDF KS82C670/671 140MHz KS82C670 KS82C671 KS82C671) KS82C670/671 20-Pln pixel clock generator ttl

    rb414

    Abstract: KM44C1003
    Text: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan     		PDF KM44C HHHHHHI-INMHHM01 KM44C1003DT rb414 KM44C1003

    512X16

    Abstract: KM6164002B 512X16 sram
    Text: Pro-iïiTTin&y CMOS SRAM KM6164002B, KM6164002BI 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G ENER AL DESCRIPTION •• Fast Access Time 10,12,15 * Max. - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM6164002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		PDF KM6164002B, KM6164002BI 256Kx KM6164002B I/O16 KM6164002BJ 44-SOJ-400 KM6164002BT 512X16 512X16 sram

    96-Seg

    Abstract: No abstract text available
    Text: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features


    OCR Scan     		PDF KS57C2408 KS57C2408 up-to-12-digit 16-bit 80-pin 002b535 71b4142 D0SbS37 96-Seg

    KM622568

    Abstract: KM62256B
    Text: KM62256BL/KM62256BL-L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 70, 85, 100, 120ns Max. • Low Pow er D issipatio n S tandby (CMOS): 10/xW (Typ.) L-Version 5/iW (Typ.) LL-Version O perating : 35m W /1M H z (Max.)


    OCR Scan     		PDF KM62256BL/KM62256BL-L 120ns 10/xW 62256B 28-DIP-600B KM622S6BLG/BLG 28-SOP-450 KM62256BLS/BLS-L 28-DIP-300 KM62256BLTG/BLTG-L KM622568 KM62256B

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)


    OCR Scan     		PDF KM641001 KM641001 576-bit

    Untitled

    Abstract: No abstract text available
    Text: MEE D SAMSUNG ELEC TRONICS INC n 7%4142 DGlOObS 1 BHSMiSK KM41C1002B CMOS DRAM 1M X 1 Bit C M O S Dynamic R A M with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002B is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­


    OCR Scan     		PDF KM41C1002B KM41C1002B KM41C1002B- 110ns 130ns 150ns KM41C1002B-10 KM41C1002B" 100ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D KA2220 S 7^4142 0 0 0 =120 0 S E3SMÛK LINEAR INTEGRATED CIRCUIT 'T - 'n - T A EQUALIZER AMPLIFIER WITH ALC The KA2220 Is a monolithic integrated circuit consisting of a preamplifier and ALC circuit for cassette tape recorders


    OCR Scan     		PDF KA2220 KA2220 7U4142

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 GÜ1220B 4GG « S U G K N-CHANNEL POWER MOSFETS bME D IRF710/711/712/713 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysillcon gate cell structure Lower input capacitance


    OCR Scan     		PDF 1220B IRF710/711/712/713 IRF710 IRF711 IRF712 IRF713

    Untitled

    Abstract: No abstract text available
    Text: K S 8 8 C 0 1 16 Mi crocontroller ELECTRO NICS DESCRIPTION The KS88C0116 single-chip 8-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, two 16-bit timer/counters, a large number of general I/O pins, a UART, and a 16-bit backup timer,


    OCR Scan     		PDF KS88C0116 16-bit 272-byte 16-Kbyte 64-Kbyte S-SDIP-750 D032464

    KMM591000A

    Abstract: KMM491000A-10 KMM491000A-8 30-pin simm memory
    Text: SAMSUNG SEMICONDUCTOR INC S3E D 7^4145 KMM491000A/KMM591000A 0Q0ÔS31 4 I MEMORY MODULES 1 M x 9 DRAM SIP and S IM M Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • Ninth device has separate 0 , Q and CAS for Parity


    OCR Scan     		PDF KMM491000A/KMM591000A KMM491000A KMM591000A KM41C1000AJ 20-pin 7Tb4142 M491OOOA/KMM591OOOA KMM591000 KMM491000A KMM491000A-10 KMM491000A-8 30-pin simm memory

    29V040

    Abstract: No abstract text available
    Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us


    OCR Scan     		PDF KM29V040T 512Kx8Bit 512Kx8 500us 400mil/0 KM29V040T KM29V040 -TSOP2-400F -TSQP2-400R 29V040

    Untitled

    Abstract: No abstract text available
    Text: KMM466S424DT PC66 SODIMM Revision History Revision 0.0 July 7,1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    OCR Scan     		PDF KMM466S424DT 4Mx16 KM416S4030DT 7U4142