KM62256B Search Results

Contextual Info: SAMSUNG ELECTRONICS INC bME D • VSbMlME QDlB^Tb 733 KM62256BL-V CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 ~ S.5V • Fast Access Time: 3V Operation: 240ns Max. 5V Operation: 120ns (Max.)

KM62256BLG

Abstract: KM62256BLP KM62256BL-10 KM62256BL-L
Contextual Info: CMOS SRAM KM62256BÜKM62256BL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns Max. • Low Power Dissipation Standby (CMOS): lO^W (Typ.) L-Version 5/iW (Typ.) LL-Version Operating : 35mW (Typ.)

KM622568

Abstract: KM62256B
Contextual Info: KM62256BL/KM62256BL-L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 70, 85, 100, 120ns Max. • Low Pow er D issipatio n S tandby (CMOS): 10/xW (Typ.) L-Version 5/iW (Typ.) LL-Version O perating : 35m W /1M H z (Max.)

KM62256BUKM62256BL-L

Abstract: KM62256BLG KM62256BL KM62256BLP
Contextual Info: CMOS SRAM KM62256BUKM62256BL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns Max. • Low Power Dissipation Standby (CMOS): 10MW (Typ.) L-Version 5/iW (Typ.) LL-Version Operating : 35mW/1MHz (Max.)

62256B

Abstract: ic 62256 62256 KM62256 sram 62256
Contextual Info: KM62256BLPI/BLGI CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION T h e K M 6 2 2 5 6 B L P I/B L G I is a 2 6 2 ,1 4 4 -b it h ig h -s p e e d • In du s tria l T e m p e ra tu re Range: - 40 to 8 5 °C • Fast A cc e s s Tim e: 70, 100ns M ax.

KM62256BLPI-7

Contextual Info: CMOS SRAM KM62256BLPI/BLGI 32Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: -4 0 to 8S°C • Fast Access Time: 70,100 ns (Max.) • Low Power Dissipation Standby (CMOS) : 275^W (Max.)

Contextual Info: CMOS SRAM KM62256BLPI/BLGI 32Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C • Fast Access Time: 70,100 ns (Max.) • Low Power Dissipation Standby (CMOS) : 275/iW (Max.)

Contextual Info: KM62256BL-V CMOS SRAM 32K x8 Bit Static RAM Wide Voltage Range Operation FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7-5.5V • Fast Access Time — 3V Operation: 240ns (Max.) — 5V Operation: 120na (Max.) • Low Power Dissipation Standby/Operating

km62256blp

Abstract: KM62256BLGI-10 KM62256BLGI-7 KM62256BLPI-10 KM62256BLPI-7
Contextual Info: KM62256BLPI/BLGI CMOS SRAM 32Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C • Fast Access Time: 70,100 ns (Max.) • Low Power Dissipation Standby (CMOS) : 275^W (Max.)

Contextual Info: KM62256BL / BL-L CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION > Fast Access Tim e : 70, 85, 100ns M ax. > Low Pow er Dissipation Standby (C M O S ): 550|aW (m ax.) L Version 1 1 0^ W (m ax.) LL Version T h e K M 62 2 5 6B L /B L -L is a 2 6 2 ,1 4 4 -b it high-speed

km62256blg

Abstract: KM62256BL-7
Contextual Info: KM62256BLKM62256BL-L CMOS SRAM 3 2 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5fiVt (typ.) LL-Version Operating : 35m W (typ.) • Single 5 V ± 10% Power Supply

Contextual Info: KM62256BUKM62256BL-L CMOS SRAM 32,768 W OR D X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • F a s t A c c e s s T im e : 70, 85, 100, 120ns M ax. The KM 62256BL/BL-L is a 262,144-bit high-speed S ta tic Random A cce ss M em ory organized as 32,768

Contextual Info: S A M S UN G E L E C T R O N I C S INC b?E D • 7ib4mB KM62256BL/KM62256BL-L G D 1 7 4Ô S G^l « S M G K CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns Max. • Low Power Dissipation

Contextual Info: CMOS SRÄM KM62256BLI/BLI-L 32,768 WORD x 8 Bit CMOS Ststic RAM industriai Temperature Range Operation GENERAL DESCRIPTION FEATURES • Industrial Temperature Range: -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation Standby (CMOS) : 275/<W(max.)

KM62256BLG

Abstract: KM62256BLP KM62256BL-L KM62256BL KM62256BL-8 KM62256BL-7L KM62256BL-8L KM62256BL-10
Contextual Info: KM62256BL/KM62256BL-L CMOS SRAM 32KX8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^/W (typ.) L-Version 5/j W (typ.) LL-Version O perating : 35mW (typ.) • Single 5 V ± 1 0 % Power Supply

KM62256BLP-V

Abstract: KM62256BLS-V KM62256B KM62256BLG
Contextual Info: KM62256BL-V CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 - 5.5V • Fast Access Time: 3V Operation: 240ns Max. 5V Operation: '120ns (Max.) • Low Power Dissipation Standby/Operating 3V Operation: 2.4fxW/1.2mW (Typ.)

Contextual Info: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)

Contextual Info: CM O S SRAM KM681OOOBLI/BLI-L 1 3 1 ,0 7 2 W O fíD X 8 B it C M O S S ts tic R A M industriai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

"30 pin simm"

Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

KM62256ALP-8

Abstract: km62256ap-10 KM62256ALP KM62256ALP-12 KM62256ALP8 KM62256AP-12 KM62256BL-10L IDT71256L20 KM62256BL-12L IDT71256L30
Contextual Info: — 2 5 6 K X m s tt £ C'C TAAC max ns) TCAC •ax (ns) CMOS A TOE ■ax (ns) y S t a t i c &■ J' 7 T0H nin (ns) TOD max (ns) RAM ( 3 2 7 6 8 x 8 ) % w TWP TDS (ns) (ns) TDH min (ns) 2 8 P I N TWD ■in (ns) TWR max (ns) V D D or V C C I DD (V) (mA) 6 2 2 5 6