7Z MOSFET Search Results

Contextual Info: 6 0 V v U - X 717-MOSFET 60V SERIES POWER MOSFET O U T L IN E DIM ENSIO NS 2SJ365 F2E6P - 6 0 v -2a • æ fë ü RATINGS ■ A bsolute Maximum R atin gs m s m Item ^ Storage Temperature -V ^ Channel Temperature K u -f > • v - x f E Drain-Source Voltage

IT1701

Abstract: 2N4351 3N172 3N163 3N164 3N170 3N171 IT1750 M116 M117
Contextual Info: I HA R R I S S E M I C O N D S E C T O R 27E D T SeS i; O 4302 27 1 QD157G1 0 BBHAS g • T r'O l" 0 I T -Z -7-Z 5 Switching/Am plifier Transistors M O S F E T s — N -C h a n n e l PART NUMBER PACKAGE VGS TH I V Max Min BVds S V Min •dss pA Max •gss

2SK2770-01

Abstract: SC-65 T151
Contextual Info: S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : P o w e r MOSFET 2 SK 2 7 T 0-0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric C o jid . CHECKED DWG.N0. DRAWN \/ /n |—

BF966S

Abstract: transistor BG 23
Contextual Info: 7 1 1 DÖ2 b 0 0 1 3 7 5 4 2 b l 3 M PHIN BF966S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.

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L291N

Contextual Info: J. S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : P ow e r M Q S F E T 2 S K 2 6 4 6— 0 1 SPEC. No. F u j i This S p e c ific a tio n DATE NAME APPROVED DRAWN E l e c t r i c Co., Ltd. is su b ject to change without notice. Fuji Electric Co4±cL CHECKE!

Contextual Info: ISO -9001 CERTIFIED BY DESC HIGH POWER DUAL OPERATIONAL AMPLIFIER M .S .K E N N E D Y CO RP. 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: • • • • • • • • 101 Operates In Class AB Or Class C Mode Low Cost High Voltage Operation : 150V

Contextual Info: Provisional Data Sheet No. PD - 9.1708 International l R Rectifier dv/dt RATED HEXFET TRANSISTOR IRHNA7Z60 IRHNA8Z60 R E P E TIT IV E AVALAN C HE A ND N -C H A N N E L MEGA RAD HARD 30 Volt, 0.009a, MEGA RAD HARD HEXFET International R ectifier's RAD HARD technology

a39 zener diode

Contextual Info: MOTORCLA SC IME D I b3b?2S4 00^031? 2 | XSTRS/R F 7 ~ -3 7 - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTP25IM06E Designer's Data Sheet TM OS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced " E " series of TM O S power M O SFET s is designed to withstand high

7652Z

Abstract: internal circuit diagram of IC 741 LM741 thermoelectric peltier
Contextual Info: WTELEDYNE COMPONENTS TC7652* LOW NOISE, CHOPPER-STABILIZED OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC7652 low noise, chopper-stabilized operational amplifier improves noise performance and provides a wider common-mode input voltage range. It offers low-input off­

Contextual Info: ISO 9001 CERTIFIED 42 AMP, 200 VOLT 3 PHASE BRIDGE SMART POWER HYBRID IVI.S.KENNEDY CORP. 4320 8 1 7 0 Thom pson Road Cicero, N.Y. 1 3 0 3 9 3 1 5 6 9 9 -9 2 0 1 PRELIMINARY FEATURES: • • • • • • • 2 0 0 V , 4 2 A m p Capability Ultra Low Therm al Resistance - Junction to Case - 0 .3 °C A V

QILE44P-410T

Abstract: PCC-044T-01 CCD circuit TK064
Contextual Info: TEKTRONIX INC/ INTEGRATED ‘T C I / I £ L f\ B1E D INTEGRATED CIRCUITS OPERATION CHARGE COUPLED DEVICES • S^DbiaM DQDQISS fc, . %V * J - \ W " SPECIFICATION^ ORDERING INFORMATION, Front Illuminated or thinned back illuminated 64 X 64 pixels Unique thinning and

bss223pw

Contextual Info: User's Guide SLUU446A – June 2011 – Revised September 2011 EV2400 EVM Interface Board This user's guide describes the function and operation of the EV2400 evaluation module interface board. A complete description, as well as the bill of materials and schematic are included.

Contextual Info: INTEGRATED CIRCUITS UC1875/6/7/8 UC2875/6/7/8 UC3875/6/7/8 UNITRODE Phase Shift Resonant Controller FEATURES DESCRIPTION « Zero to 100% Duty Cycle Control The UC1875 family of integrated circuits implements control of a bridge power stage by phase-shifting the

IRF3103

Abstract: ap amp mosfet 200 rms
Contextual Info: UCC1588/-1 UCC2588/-1 UCC3588/-1 UNITRODE ADVANCE INFORMATION 5-Bit Programmable Output BiCMOS Power Supply Controller FEATURES DESCRIPTION • 5-Bit Digital-to-Analog Converter DAC supports Intel Pentium II The UCC1588 synchronous step-down (Buck) regulator provides accurate

Contextual Info: M M O TO R O LA — MC34262 MC33262 Advance Information Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off-line power converter applications. These integrated circuits feature an internal startup

mbrs0530l

Abstract: LTC15 three pin 1504A
Contextual Info: r r im m _ LTC15 0 4 A TECHNOLOGY 5 0 0 m A L o w V o lt a g e S te p -D o w n S y n c h ro n o u s S w itc h in g R e g u la to r F€flTUR€S D C S C R IP TIO n • 500mA Output Current at 3 .3 V Output ■ Up to 92% Peak Efficiency ■ 10 0 % Maximum Duty Cycle

tl4311

Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
Contextual Info: SG388CH/D 2000
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Contextual Info: •HYUNDAI H Y 5 2 1 6 2 5 7 256K x S e r ie s 16-bit Video RAM with 2WE Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a