IT1700 Search Results

Contextual Info: P-Channel Enhancement Mode MOSFET General Purpose Amplifier calocflc CORPORATION v IT1700 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • • Low ON-Resistance High Gain Low Noise Voltage High Input Impedance Low Leakage

IT1700

Abstract: XIT1700 MOSFET pA leakage
Contextual Info: _ v U lO w lC P-Channel Enhancement Mode MOSFET General Purpose Amplifier i n CO R P O R A TIO N \ j IT1700 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • • Low ON-Resistance High Gain Low Noise Voltage High Input Impedance

IT1700

Abstract: XIT1700
Contextual Info: P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION IT1700 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Low ON-Resistance • High Gain Noise Voltage • Low • High Input Impedance • Low Leakage Drain-Source and Gate-Source Voltage . . . . . . . . . . . . . -40V

j307

Abstract: lD-10mA IT1700
Contextual Info: Gl G E SOLID STATE DE 13fl7SGfil GOllGBT 1 | P-Channel Enhancement Mode MOSFET General Purpose Amplifier IT1700 IT1700 T -s^ -sn FEATURES ABSOLUTE MAXIMUM RATINGS • Low ON-Resistance 0 a = 25°C unless otherwise noted Drain-Source and Gate-Source Voltage . -4 0 V

P 838 X MOSFET

Contextual Info: Cdlotf WUIVWlC P-Chaimel Enhancement Mode MOSFET General Purpose Amplifier ^ M §mfm \J CORPORATION IT1700 A B S O L U T E M A X IM U M R A T IN G S T a = 2 5 °C u nle ss o th e rw ise s p ecified FEATURES • • • • • Low H ig h Low H ig h Low

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: Ordering number : ENA2167 ATP401 N-Channel Power MOSFET http://onsemi.com 60V, 100A, 3.7mΩ, ATPAK Features • • ON-resistance RDS on 1=2.8mΩ(typ) 4.5V Drive Input Capasitance Ciss=17000pF(typ) Halogen free compliance • • Specifications Absolute Maximum Ratings at Ta=25°C

IT1701

Abstract: A2167 ATP401-TL-H ATP401 IT17005
Contextual Info: ATP401 Ordering number : ENA2167 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP401 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=2.8mΩ(typ) 4.5V Drive Input Capasitance Ciss=17000pF(typ) Halogen free compliance

IT1700

Contextual Info: DMÜ^iDIL IT 1 7 0 0 P -C h an n el E nh an cem en t Mode MOS FIET FEATURES • L o w On-R esistance - r D S o n ^ • H igh G ate B re a k d o w n V o lta g e - V q Sc> ^ 2 5 V oh m s • H igh In p u t Im pe da nce - l O 1^ ohm s • H igh G ain - •

ENA2166

Contextual Info: Ordering number : ENA2166 CPH6635 Power MOSFET http://onsemi.com 30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6 Features • • • • Excellent ON-resistance characteristic P-Channel : RDS(on 1=215mΩ (typ.) Optimal for load switch use (N-Channel for drive is embedded)

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

Contextual Info: Ordering number : ENA2166 CPH6635 Power MOSFET http://onsemi.com 30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6 Features • • • • Excellent ON-resistance characteristic P-Channel : RDS(on 1=215mΩ (typ.) Optimal for load switch use (N-Channel for drive is embedded)

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
Contextual Info: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership

Contextual Info: ATP401 Ordering number : ENA2167 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP401 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=2.8mΩ(typ) 4.5V Drive Input Capasitance Ciss=17000pF(typ) Halogen free compliance

2N3609

Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3

2N4351

Abstract: 3N161 3N163 3N164 3N170 3N171 3N172 3N173 IT1700 IT1750
Contextual Info: 1. D IS C R E T E S Switches and Amplifiers Offering intormatfM Priftrrtd P in Num b« Package — ^G S lh GS(ofl| Min/max V M O SFET Qls BWq s s lo s s max Ig s s max min r DS (on) max talon) min •o (on) min V pA pA pmho u mA mA max P-Chinm l Enhancamtnt: Gen. u se d w here max isolation between signal source and logic drive required: sw. "O n" resistance varies with signal amplitude.

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.