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    Mersen Electrical Power A150X800-MWBTI

    Fuse, Semiconductor, Fast Acting,100kA,1000VAC/DC,800A | Mersen A150X800-MWBTI
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    RS A150X800-MWBTI Bulk 6 Weeks 1
    • 1 $4847.3
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    Eaton Cutler-Hammer E2N3800MW (ALTERNATE: E2N3800MW)

    3 POLE 800 AMP 600V INST ONLY N-FRAME MINING CIRCUIT BREAKER | Eaton - Cutler Hammer E2N3800MW
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    RS E2N3800MW (ALTERNATE: E2N3800MW) Bulk 5 Weeks 1
    • 1 $12336.59
    • 10 $11719.76
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    Eaton Cutler-Hammer E2M3800MWW (ALTERNATE: E2M3800MWW)

    MDL 600V MINING FRAME W/LT MAG ONLY 3000-6000 | Eaton - Cutler Hammer E2M3800MWW
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    RS E2M3800MWW (ALTERNATE: E2M3800MWW) Bulk 5 Weeks 1
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    Eaton Cutler-Hammer E2NM3800MW (ALTERNATE: E2NM3800MW)

    3 POLE 800 AMP 1000V INST ONLY N-FRAME MINING CIRCUIT BRKR | Eaton - Cutler Hammer E2NM3800MW
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    RS E2NM3800MW (ALTERNATE: E2NM3800MW) Bulk 5 Weeks 1
    • 1 $18026.26
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    Eaton Cutler-Hammer E2N3800MWU66 (ALTERNATE: E2N3800MWU66)

    3 POLE 800 AMP 600V INST ONLY N-FRAME MINING CIRCUIT BREAKER | Eaton - Cutler Hammer E2N3800MWU66
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    RS E2N3800MWU66 (ALTERNATE: E2N3800MWU66) Bulk 5 Weeks 1
    • 1 $14377.75
    • 10 $13658.86
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    800MW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: High Directivity Monolithic Amplifier 50Ω VNA-22 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 800mW Input Power no damage 10 dBm Pin Connections • 3V & 5V operation


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    PDF 800mW VNA-22 XX211 VNA-22 100pF M98898 ED-9810A/2

    KSC1008

    Abstract: No abstract text available
    Text: KSC1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage: VCBO=80V • Collector Current: IC=700mA • Collector Dissipation: PC=800mW ABSOLUTE MAXIMUM RATINGS TA=25°°C


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    PDF KSC1008 KSA708 700mA 800mW KSC1008

    Transistor B C 458

    Abstract: ksb564 ksd471
    Text: KSD471A KSD471A Audio Frequency Power Amplifier • • • • Complement to KSB564A Collector Current : IC=1A Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector


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    PDF KSD471A KSB564A 800mW KSD471A Transistor B C 458 ksb564 ksd471

    pnp Transistor TO92 5V 200mA

    Abstract: KSA709
    Text: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector


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    PDF KSA709 -160V 800mW KSC1009 KSA709RBU KSA709CYBU KSA709YBU KSA709RTA KSA709YTA pnp Transistor TO92 5V 200mA KSA709

    transistor c1009

    Abstract: c1009 c1009 transistor KSA709 KSC1009
    Text: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base


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    PDF KSC1009 700mA 800mW KSA709 KSC1009 KSC1009CYBU KSC1009CYTA KSC1009GBU KSC1009GTA transistor c1009 c1009 c1009 transistor

    laser diode 660nm

    Abstract: K66S09F-0
    Text: 660nm~690nm HHL Package Fiber-Coupled Diode Laser K66S09F-0.80W K67S09F-0.80W K68S09F-0.80W K69S09F-0.80W Key Features: Š 800mW output power Š 105µm or 200µm fiber core diameter Š 0.22NA Š 660nm~690nm wavelength Applications: Š Medical use Š Material processing


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    PDF 660nm 690nm K66S09F-0 K67S09F-0 K68S09F-0 K69S09F-0 800mW k6xs09f laser diode 660nm

    DPS8100

    Abstract: TLFD600 schematic diagram modem adsl echo cancellation schematic diagram 3bit flash adc ISSCC99
    Text: A 800mW, Full-Rate ADSL-RT Analog Frontend IC with Integrated Line Driver Hubert Weinberger, Andreas Wiesbauer, Christian Fleischhacker, Jörg Hauptmann Infineon Technologies, Design Centers Austria GmbH, Design Center Villach hubert.weinberger@infineon.com


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    PDF 800mW, ISSCC99, TLFD600, DPS8100 TLFD600 schematic diagram modem adsl echo cancellation schematic diagram 3bit flash adc ISSCC99

    KSA708

    Abstract: No abstract text available
    Text: KSA708 KSA708 Low Frequency Amplifier & Medium Speed Switching • • • • Complement to KSC1008 Collector-Base Voltage : VCBO= -80V Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1


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    PDF KSA708 KSC1008 800mW KSA708

    TB-01

    Abstract: VNA-22 XX211
    Text: High Directivity VNA-22+ VNA-22 Monolithic Amplifier 50Ω 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 800mW Input Power no damage 10 dBm Pin Connections • 3V & 5V operation


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    PDF VNA-22+ VNA-22 800mW 2002/95/EC) 100pF M98898 ED-9810A/2 TB-01 VNA-22 XX211

    SDD115

    Abstract: No abstract text available
    Text: DC/DC Converter Transformer Type SDD115 Dimensions: UNIT : mm 12.0 Max. Recommand Pad Specifications 4.5 Max. 5 8 2.0 1.0 11.3 Max. 2.5 4 Max. Operation Freq. : 500KHz Max. Operation Power : 800mW @100KHz 2.0W @300KHz 3.0W @500KHz 6.5 1 0.5x0.15 DDR63 3.0 Max.


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    PDF SDD115 500KHz 800mW 100KHz 300KHz DDR63 280mW 500mW SDD115

    KSB564A

    Abstract: KSD471A
    Text: KSB564A KSB564A Audio Frequency Power Amplifier • • • • Complement to KSD471A Collector Current : IC = -1A Collector Power Dissipation : PC = 800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector


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    PDF KSB564A KSD471A 800mW KSB564A KSD471A

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1078A CPH6003A RF Transistor http://onsemi.com 12V, 150mA, fT=7GHz, NPN Single CPH6 Features • • • • High gain fT=7GHz typ High Current (IC=150mA) Ultraminiature and thin 6pin package Large Collector Disspation (800mW) Specifications


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    PDF ENA1078A CPH6003A 150mA, 150mA) 800mW) 250mm2 A1078-7/7

    PA3202

    Abstract: PA3202-N24-R PA3202-N24-T
    Text: UNISONIC TECHNOLOGIES CO., LTD PA3202 CMOS IC 2-W STEREO AUDIO POWER AMPLIFIER WITH MUTE „ DESCRIPTION The UTC PA3202 is a monolithic integrated circuit that stereo bridged audio power amplifiers capable of producing 2 W into 3Ω with a 5V supply voltage or 800mW into 3Ω with a 3.3V supply


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    PDF PA3202 PA3202 800mW PA3202, QW-R502-106 PA3202-N24-R PA3202-N24-T

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components KSD471A KSD471A-O KSD471A-Y KSD471A-G   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Collector Dissipation : IC = 1A x Collector Current : PC = 800mW


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    PDF KSD471A KSD471A-O KSD471A-Y KSD471A-G 800mW

    MA7300B

    Abstract: MA7056 MA7160 MA7470 MA7100 Ma7180-a MA7000 ma706 zener band yellow MA7510
    Text: MA111 Zener Diodes MA7000 Series Silicon planer type Unit : mm For stabilization of power supply ø0.8 ● Radial taping possible 27 min. Large power dissipation Ptot 800mW Colored band indicates Vz classification 3rd Band 2nd Band 1st Band 5.0 max. ●


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    PDF MA111 MA7000 800mW) FDO-41 MA7120 MA7130 MA7150 MA7160 MA7180 MA7200 MA7300B MA7056 MA7470 MA7100 Ma7180-a ma706 zener band yellow MA7510

    tdk cn-3850

    Abstract: CN3851 CN-3850 CN-3851 TDK CN3850 CN3850 CN3803 TDK DC to DC converters, DC to AC inverters CN3857 CN-3801
    Text: TDK DC to DC Converters, DC to AC Inverters 800mW 4 0E D • ÔÛS12MÔ T D K OGOM^B 1 ¡TDKA CORP 7- // _ CN SERIES DC TO DC CONVERTERS FEATURES • High stability ± 5 % . • Low-profile — Can be installed in a 3/4 inch rack, (height 12mm [.472 inches])


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    PDF 800mW CN-3850 CN-3851 CN-3852 CN-3853 CN-3854 CN-3855 CN-3856 CN-3857 CN-3858 tdk cn-3850 CN3851 CN-3850 TDK CN3850 CN3850 CN3803 TDK DC to DC converters, DC to AC inverters CN3857 CN-3801

    A10C

    Abstract: CY7C1006
    Text: CYPRESS SEMICO NDU CTOR MbE » I aSflìbbé QD0ti7Q4 T • CY7C1006 ADVANCED INFORMATION. CYPRESS SEMICONDUCTOR 256K x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 15 ns • CMOS for optimum speed/power • Low active power — 800mW


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    PDF CY7C1006 800mW CY7C1006 CY7CI006 300-mil-wideDIPs 7C1006â A10C

    Untitled

    Abstract: No abstract text available
    Text: Audio ICs 6V/800mW single-channel power amplifier BA527 The BA527 is a monolithic power amplifier designed for portable cassette players and radio cassette players. With a 6V power supply, it has a rated output of 800mW into a 4Q load THD = 10% . It is a high-grade design that gener­


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    PDF V/800mW BA527 BA527 800mW 800mW 1300mW. BA526 45Vitns GGnS42

    ADC80-12

    Abstract: 223S ADC80 ADC80-10 DAC 0-10v
    Text: ANALOG D EV ICES □ 12-Bit Successive Approximation Integrated Circuit A/D Converter PRELIM IN A R Y TECHNICA L DATA FEATURES Performance True 12-Bit Operation: Max Nonlinearity <±0.012% Low Gain T.C.: <±30ppm /°C Low Power: 800mW Fast Conversion Time: <22/us


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    PDF 12-Bit 30ppm/Â 800mW ADC80 12-biof AD7501 AD583 ADC80 ADC80-12 223S ADC80-10 DAC 0-10v

    transistor 1005 oj

    Abstract: KSA707 KSC1072
    Text: SAMSUNG S EM I C ONDU C T OR INC 14E KSC1072 D | 7TbM:L42 Q0Qt.fl7M 3 | T -lf-H NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSA7U7 • Collector-Base Voltage Vceo=60V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C


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    PDF KSC1072 KSA707 800mW 100/iA, transistor 1005 oj KSA707

    KSC1008

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC1008 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • • • • Complement to KSA7D8 High Collector-Base Voltage Vcso=BOV Collector Current lc=700mA Collector Dissipation Pc=800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C


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    PDF KSC1008 700mA 800mW 10m08 05472tJ KSC1008

    KSA708

    Abstract: KSC1008
    Text: KSA708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 MEDIUM SPEED SWITCHING • Complement to KSC1008 • Collector-Base Voltage VCBo=-80V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage


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    PDF KSA708 KSC1008 800mW -100f QQ24b4à Sbm42 KSA708 KSC1008

    2SA708

    Abstract: No abstract text available
    Text: fr | e FORWARD INTERNATIONAL ELECTRONICS l id . 2SA708 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AM PLIFIER MEDIUM SPEED SW ITCHING * Complement to2Scl008 * Collector-Base Voltage Vcbo=-80 V * Collector Dissipation; Pc=800mW


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    PDF 2SA708 to2Scl008 800mW -100uA -10mA -50mA -500mA 2SA708

    a1024

    Abstract: Panasonic diode MA1033 DIODE D29 MA4030 ma4300 zener MA2560 MA7056 MA1Z091 MA2430
    Text: Diode # Zener Diode Series Zener Voltage Vz V MA1000 DO-35 (D28) P d = 500mW MA2000 DO-41 (D29) P D = 1W MA3000/MAZ Mini Type 3 pins (D12) P d = 200mW MA4000 DO-34 (D26) Pc = 370mW MA5000 Mini-Power Type 2 pins (D17) P D = 500mW MA7000 DO-41 (D29) P d = 800mW


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    PDF MA1000 DO-35 500mW MA1020 A1022 A1024 A1027 MA1030 MA1033 MA1036 Panasonic diode DIODE D29 MA4030 ma4300 zener MA2560 MA7056 MA1Z091 MA2430