KSA709 Search Results

pnp Transistor TO92 5V 200mA

Abstract: KSA709
Contextual Info: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

transistor c1009

Abstract: c1009 c1009 transistor KSA709 KSC1009
Contextual Info: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base

Contextual Info: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • • • • TO -92 High C ollector-Base Voltage: V Cb o = 1 6 0 V C ollector Current: lc=700m A C ollector Dissipation: Pc=800m W C om plem ent to KSA709 ABSOLUTE MAXIMUM RATINGS TA=25°C

KSA709

Contextual Info: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • High Collector-Base Voltage: VCBO=160V • Collector Current: IC=700mA • Collector Dissipation: PC=800mW • Complement to KSA709 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic

ksd 168

Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220

KSA709

Contextual Info: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base

KSA709

Contextual Info: KSA709 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • Collector-Base Voltage: VCBO= -160V • Collector Dissipation: PC=800mW • Complement to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA709 HIGH VOLTAGE AMPLIFIER • Col lector-Base Voltage: V Cb o = -1 6 0 V • C ollector D issipation: Pc=8 0 0m W • C om plem ent to KSC 1009 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol Col lector-Base Voltage

KSA709

Abstract: KSC1009
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC1009 14E O | 7^4142 OQObf l bfl fl NPN EPITAXIAL SILICON TRANSISTOR T -29-23 HIGH VOLTAGE AMPLIFIER • • • • High Collector-Base Voltage Vceo=160V Collector Current lc =700inA Collector Dissipation P c =800mW Complement to KSA709

Contextual Info: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • High Collector-Base Voltage V Cao=160V • Collector Current lc=700mA • Collector Dissipation P c*800m W • Com plem ent to KSA709 ABSOLUTE MAXIMUM RATINGS T a = 2 5 'C C h aracte ristic

KSA709

Abstract: KSC1009
Contextual Info: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

KSA709

Abstract: KSC1009
Contextual Info: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base

A709 transistor

Abstract: a709 fairchild a709 KSA709CGBU KSA709
Contextual Info: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

KSA709

Abstract: KSC1009
Contextual Info: KSC1009 KSC1009 High Voltage Amplifier • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Dissipation : PC=800mW Complement to KSA709 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: KSC1009 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • • • • High Collector-Base Voltage Vcao=160V Collector Current lc = 700mA Collector Dissipation Pc=800mW Complement to KSA709 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol

KSA709

Abstract: KSC1009
Contextual Info: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector

KSA709

Abstract: KSC1009
Contextual Info: SAMSUNG SEMICONDUCTOR INC T v M - v 2 3 l 4 E KSA709 O | OOGbflOE O PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • C o lle cto r-B a s e Voltage Vcso = -160V • C o lle cto r D issip a tio n P c =800mW • C o m p le m en t to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C

KSA709

Abstract: KSC1009
Contextual Info: KSA709 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • Collector-Base Voltage V CBo = -160V • Collector Dissipation Pc =800m W • Complement to KSC1009 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage

KSD 303

Abstract: ksd 180 ksd 168 bd681 9 435 tip bc548 TIP BD140 BC548 ksd 201 ksc5386 KSP20
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series D evice Page Device Page D evice Page KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 KSA1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182

KSD 166

Abstract: KSD 168 kst 232 KSC1845 KST1623 ksc2328 KSR1001 KSD201 ksp94 TIP41 342
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 KSA1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220 KSA1241

Contextual Info: KSA709 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • Collector-Base Voltage V c b o = -160V • C ollector Dissipation Pc“ 800m W • Com plem ent to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25'C Sym b o l C h aracte ristic Collector-Base Voltage

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

KSC2880

Abstract: KSA1200
Contextual Info: FUNCTION GUIDE TRANSISTORS 1-4. High Voltage Transistors 1-4-1. SOT-23'Type Transistors Condition Device and Polarity NPN KST42 1D KST43(1 E) PNP lc (A) VCE (V) lc (mA) MIN 300 200 150 140 0.5 0.5 0.5 0.6 10 10 5 5 30 30 10 10 40 40 60 60 KST92(2D) KST93(2E)

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)