851MHZ Search Results

Contextual Info: PLL400-864AY PLL400-864AY 5V NARROWBAND PHASELOCKED LOOP 5V NARROWBAND PHASE-LOCKED LOOP Package: PLL400, 15.24mm x 15.24mm x 3mm PLL Synthesizer Block Diagram Features  Low Phase Noise / Fast Settling Time  SPI Bus Compatible  Frequency: 851MHz to 877MHz

433 mhz rf power amplifier module efficiency

Abstract: M68701 433 mhz rf amplifier module
Contextual Info: MITSUBISHI RF POWER MODULE M68701 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 60.5±1 2 3 57.5±0.5 50.4±1 2-R1.6+0.2 1 4 5 1 2 3 4 5 0.45±0.2 8.3±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY

H11S

Abstract: RA06H8285M RA06H8285M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to

Contextual Info: < Silicon RF Power Modules > RA06H8285M RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the

transistor marking code H11S

Abstract: H11S RA06H8285M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M RoHS Compliance ,820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz

murata gps

Abstract: murata saw filter smd diode marking 325 SAWES smd 1513 murata SAW saw filter 30 MHz for GPS
Contextual Info: SAW FILTER FOR J-CDMA/GPS Rx Murata part number : SAWES851MLA0F00 (fc=851MHz) Feature 1. Dual type 2. Ultra Small SMD package (2.5x2.0mm package) Test Circuit 50Ω 5 4 3 2 1 S.S.G. 6 7 8 9 10 Package Dimensions RF Voltmeter V1 50Ω Specification Item 2.5±0.1

RA06H8285M-101

Abstract: H11S marking CODE H11S
Contextual Info: < Silicon RF Power Modules > RA06H8285M RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the

RA06H8285M

Abstract: RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM MOSFET Amplifier Module RA06H8285M-01 RA06H8285M-E01 MOSFET AMPLIFIER Handling Precautions for MOSFET rf mosfet power amplifier Rf power transistor mosfet
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M 820-851MHz 6W 12.5V MOBILE RADIO DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range.

H11S

Abstract: RA06H8285M RA06H8285M-01 RA06H8285M-E01 RA06H8285MB
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to

"fet power"

Abstract: M68761
Contextual Info: MITSUBISHI RF POWER MODULE M68761 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 42 2 3 4 37 30 2-R1.5 1 5 6 PIN: 1 Pin : RF INPUT 2 VDD1 : 1st DRAIN BIAS SUPPLY 3 VGG : GATE BIAS SUPPLY 4 VDD2 : 2nd DRAIN BIAS SUPPLY

marking CODE H11S

Abstract: H11S RA06H8285M MOSFET Amplifier Module transistor marking code H11S transistor marking code 12W 12
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M RoHS Compliance ,820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz

H11S

Abstract: RA06H8285M MOSFET Amplifier Module
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M RoHS Compliance ,820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz

K&L Microwave

Contextual Info: WSF-00050 ESMR Receive Filter Features: ¥ Low insertion loss; <0.70dB typical ¥ High return loss; >20dB typical ¥ High rejection in transmit band; >95dB typical @ >851MHz ¥ Temperature stabilized - holds specifications at thermal extremes Passbands: Passband Insertion Loss:

DB35T

Abstract: mitsubishi lot code RF MOSFET MODULE MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz transistor marking zg Mitsubishi transistor rf final H46S RA02M8087MD RA02M8087MD-101 MOSFET AMPLIFIER For MOBILE RADIO 869 MHz
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

RF2461

Abstract: RF2461PCBA-41X Adjustable Gain Fully Differential output dual 741MH
Contextual Info: RF2461 CDMA/FM LOW NOISE AMPLIFIER/MIXER 900MHz DOWNCONVERTER RoHS Compliant & Pb-Free Product Typical Applications • CDMA/FM AMPS Systems • Commercial and Consumer Systems • Dual-Mode TACS/JCDMA Systems • Portable Battery-Powered Equipment • General Purpose Downconverter

dvb-t usb schematic diagram

Contextual Info: 19-0611; Rev 6; 11/08 KIT ATION EVALU E L B A AVAIL Direct-Conversion TV Tuner ♦ I and Q Baseband Outputs Eliminate All IF-SAW Filters ♦ Integrated RF Tracking Filters ♦ Tunable Baseband Lowpass Filters ♦ Full-Band VHF-III and UHF Tuning ♦ +38dB Digital ACPR, +47dB Analog ACPR

Contextual Info: RF3863 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER ̈ NC NC 13 NC 1 12 NC NC 2 11 RF OUT RF IN 3 10 NC NC 4 9 NC 5 6 7 8 NC ̈ 14 ACG ̈ 15 NC ̈ Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply

LTC5569

Abstract: LTC5583
Contextual Info: LTC5569 300MHz to 4GHz 3.3V Dual Active Downconverting Mixer FEATURES n n n n n n n n n n n n DESCRIPTION High IIP3: 26.8dBm at 1950MHz 2dB Conversion Gain Low Noise Figure: 11.7dB at 1950MHz 17dB NF Under 5dBm Blocking 44dB Channel Isolation Low Power: 3.3V/600mW Total

RA20H8087M

Abstract: RF MOSFET MODULE RA20H8087M-101 F8068
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

Philips dvb-t modulator

Abstract: 469MHz
Contextual Info: 19-0611; Rev 1; 5/07 KIT ATION EVALU E L B A AVAIL Direct-Conversion TV Tuner ♦ I and Q Baseband Outputs Eliminate All IF-SAW Filters ♦ Integrated RF Tracking Filters ♦ Tunable Baseband Lowpass Filters ♦ Full-Band VHF-III and UHF Tuning ♦ +38dB Digital ACPR, +47dB Analog ACPR

900MHZ

Abstract: RF2461 01060-7
Contextual Info: RF2461 Preliminary 8 CDMA/FM LOW NOISE AMPLIFIER/MIXER 900MHZ DOWNCONVERTER Typical Applications • CDMA/FM Cellular Systems • General Purpose Downconverter • Supports Dual-Mode AMPS/CDMA • Commercial and Consumer Systems • Supports Dual-Mode TACS/JCDMA

Contextual Info: RF3866 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER/LINEAR DRIVER „ VD1 NC VD2 NC 14 NC 13 RF OUT NC 4 12 NC 11 AC GND2 6 7 8 10 ew 9 NC AC GND1 5 Functional Block Diagram Product Description The RF3866 is a low noise amplifier with a high output IP3. The amplifier

EvalBoard

Abstract: TDA5252 lna vco mixer quadrature 2GHz pll fsk MODULATOR 50E3 TDA5250 TDA5255 300mhz demodulator dip fsk CV182 receiver tda 1072
Contextual Info: Data Sheet, Version 1.1, 2007-02-26 TDA5252 G2 ASK/FSK 915MHz Wireless Transceiver Wireless Control Components N e v e r s t o p t h i n k i n g . Edition 2007-02-26 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany Infineon Technologies AG 2/26/07.

GSM900

Abstract: QFN20 RF3863 RF3867 RF3867PCK-410
Contextual Info: RF3867 DUAL-CHANNEL, WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Dual-Channel Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply 700MHz to 3800MHz Operation Small QFN20 5mmx5mm Package „ „