880E Search Results

OD-880E

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX .080 • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission .209 .220 • High uniform output .017 • TO-46 Header .178 .195 .100 .041 1.00 MIN .022

OD-880E

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .080 • 880nm peak emission .017 • High uniform output • TO-46 Header .178 .195 .100 .041 All dimensions are nominal in inches unless otherwise

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX .080 • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission • High uniform output .017 .178 .195 • TO-46 Header .100 .041 1.00 MIN .022

880e

Abstract: OD880E
Contextual Info: HIGH-POWER GaAIAs IR EMITTERS OD-880E FEATURES • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission • High uniform output • TO-46 Header All dimensions are nominal in inches unless otherwise specified. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

Contextual Info: HIGH POWER GaAIAs IR EMITTERS OD-880E FEATURES • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission • High uniform output • TO-46 Header • 100% test for minimum power requirement All dimensions are nominal values in inches unless

OD-880E

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .080 • 880nm peak emission • High uniform output .017 • TO-46 Header .178 .195 .100 .041 1.00 MIN .022

Contextual Info: +85 COM-880E -40 C Wide-Range Temperature Intel 3rd Gen. Core COM Express Basic Type 6 CPU Module Features • • • • • • Soldered Onboard 3rd Gen. Intel® Core™ i7-3517UE Processor Integrated Gigabit Ethernet Dual Channels 24-bit LVDS, Analog RGB, and 3 x DDI Ports

K d998 transistor

Abstract: lz 02 1068 D844 voltage regulator
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

U8100E Diode

Abstract: U880E Diode u880e U8100E
Contextual Info: MOTOROLA Order this document by MUR8100E/D SEMICONDUCTOR TECHNICAL DATA SWITCH MODE Power R ectifiers MUR8100E 880E Ultrafast “E” Series with High Reverse Energy Capability MUR8100E is a Motorola Preferred Device . . . designed for use in switching power supplies, inverters and as free

a6583

Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

Contextual Info: 880E18/32/36CT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 1.8 V or 2.5 V +10%/–10% core power supply

PSRAM

Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
Contextual Info: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

Contextual Info: 880E18/32/36BT-333/300/250/200/150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply

Contextual Info: 880E18/32/36CT-xxxI 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply

Contextual Info: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

t3383

Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

8X305

Abstract: 8X305 assembly manual HP1650A d3800 dp8340 ior 227h Specification of seven segment 5250 PC327 TK 9107 8X305 manual
Contextual Info: MPA-II National Semiconductor Application Note 641 Thomas Norcross Paul J Patchen Thomas J Quigley Tim Short Debra Worsley Laura Johnson April 1995 Table of Contents 1 0 INTRODUCTION About This System User Guide Contents of the MPA-II Design Evaluation Kit

Contextual Info: Preliminary 880E18/32/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 100 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O Features Flow Through / Pipeline Reads • FT pin for user-configurable flow through or pipelined operation

APC UPS CIRCUIT DIAGRAM

Abstract: OPTICAL PICK-UP DL6 32k nsk crystal clock oscillator 32 knsk crystal clock oscillator pml 009A CIRCUIT DIAGRAM APC UPS 750 OPTICAL PICK-UP DL3 ford ecu decoding APC be 500 UPS CIRCUIT DIAGRAM APC UPS CIRCUIT DIAGRAM 500
Contextual Info: COMPART DISC PLAYER S5L9232 DESCRIPTION The S5L9232 is a one-chip LSI for Compact Disc Players including a CMOS RF, Digital Servo, CD digital signal processor, Dynamic Bass Boost, Sigma-Delta D/A converter, and Shock-proof memory controller. FEATURES The S5L9232 has the following features:

w16 72

Abstract: DES Encryption TMS320
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

Contextual Info: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

D844 voltage regulator

Abstract: 9427h 9216h
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

d2f3

Abstract: EG20T delta dps 298 cp 2A DSCA 114 communication board B43200 MSI 7680 Ver 5.1 Intel ATX smps circuit diagram Intel Atom E6xx SMPS 666 VER 2.3
Contextual Info: Intel Platform Controller Hub EG20T Datasheet January 2011 Order Number: 324211-003US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS