8EF MARKING Search Results
8EF MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
5962-8950303GC |
![]() |
ICM7555M - Dual Marked (ICM7555MTV/883) |
![]() |
![]() |
|
54HC221AJ/883C |
![]() |
54HC221AJ/883C - Dual marked (5962-8780502EA) |
![]() |
![]() |
|
54ACT157/VFA-R |
![]() |
54ACT157/VFA-R - Dual marked (5962R8968801VFA) |
![]() |
![]() |
|
54LS37/BCA |
![]() |
54LS37/BCA - Dual marked (M38510/30202BCA) |
![]() |
![]() |
|
MG8097/B |
![]() |
8097 - Math Coprocessor - Dual marked (8506301ZA) |
![]() |
![]() |
8EF MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
JLF-1382-uu9.8
Abstract: L1117DG-1.8 AS1084R-1.8 cbf 493 SC156515M-1.8 at2408n-10si-1.8 A414B AS2715T-1.8 AS2731T5-1.8 SMD1117-1.8
|
Original |
98B23A52CE8 12345627839A8B292CD478 1249ABCD8EF 809DC P853458, 15841HI830278 48506813H870338 84H2028 8408F JLF-1382-uu9.8 L1117DG-1.8 AS1084R-1.8 cbf 493 SC156515M-1.8 at2408n-10si-1.8 A414B AS2715T-1.8 AS2731T5-1.8 SMD1117-1.8 | |
Contextual Info: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current |
Original |
PJP24N10 PJF24N10 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 | |
Contextual Info: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch |
Original |
PJB24N10 2002/95/EC O-263 MIL-STD-750 B24N10 O-263 800PCS/REEL 983A5F 2010-REV | |
Contextual Info: PJN1N60D TO-92 600V N-Channel Enhancement Mode MOSFET FEATURES • 0.5A, 600V, RDS ON =15Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS |
Original |
PJN1N60D 2002/95/EC MIL-STD-750 1N60D 700ppm, 1000ppm 100ppm. | |
Contextual Info: PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers |
Original |
PJ04N03D O-252 2002/95/EC O-252 MIL-STD-750 04N03D 983A5F 2009-REV | |
Contextual Info: DA6502.009 19 December 2012 MAS6502 Piezoresistive Sensor Signal Interface IC • Optimized for Piezoresistive Pressure Sensors • Very Low Power Consumption • Ratiometric 16 Bit ∆Σ ADC • Linearity 14 Bits • Internal Clock Oscillator • Serial Data Interface I2C1 Bus |
Original |
DA6502 MAS6502 MAS6502 | |
TE 555-1
Abstract: mini project using ic 555 MPY008H marking b9d marking a007 mt4m OA95 p6-33 IC LM 555 pin detail TSX 27
|
OCR Scan |
MIL-M-38510/500B MIL-M-38510/500A MIL-M-38510. MIL-M-38510 TDC1008C1V TDC1009C1V TDC1010C1V MPY008HC2V MPY012HC1V TE 555-1 mini project using ic 555 MPY008H marking b9d marking a007 mt4m OA95 p6-33 IC LM 555 pin detail TSX 27 |