8KX8 PROM Search Results

Contextual Info: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package

as7c164

Contextual Info: H ig h P e rfo rm a n ce m 8KX8 RI AS7C164 A S7C I64L CMOS SRAM oa 8Kx8 CMOS SRAM Common I/O Features • Organization: 8,192 words x 8 bits • High speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time

AS7C164-20PC

Abstract: AS7C164 000DM 7C164-12 7C164-10
Contextual Info: H igh Perform ance AS7C164 AS7C.164L 8Kx8 CMOS SRAM A 8Kx8 CMOS SRAM Common I /O Features • Organization: 8,192 words x 8 bits • H igh speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time • Low pow er consum ption

Contextual Info: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically

C2665

Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Contextual Info: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)

Contextual Info: JUNE 1990 IPILES SE Y SEMICONDUCTORS PRELIMINARY INFORMATION PNC10C68 CMOS/SNOS nvSRAM HIGH PERFORMANCE 8Kx8 NON-VOLATILE STATIC RAM Supersedes M ay 1990 edition The PNC10C68 is a fast static RAM (25, 30, 35 and 45 ns), with a non-volatile electrically-erasable PROM

Contextual Info: CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged

Contextual Info: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized

BD4822

Contextual Info: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized

A7 SMD TRANSISTOR

Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
Contextual Info: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is

C266

Abstract: P15 Package 27C64 CY7C266 R1250 8kx8 eprom pin diagram
Contextual Info: ,.V.Ï .Ï .V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically

27C64

Abstract: CY7C266 R1250 LP 06 A4 A1 AA
Contextual Info: ,.V.Ï.Ï.V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically

TTE24C

Contextual Info: 64K-bit/32K-bit 2-Wire Serial CMOS EEPROM TTE24C32/TTE24C64 Preliminary Description The TTE24C32/TTE24C64 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C32/TTE24C64 contains a memory array of 32K-bits 4Kx8 and 64K-bits (8Kx8) repectively, and

Contextual Info: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM

Contextual Info: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM

27C64

Abstract: CY7C266 R1250 direct replacement
Contextual Info: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) The CY7C266 is a high-performance 8192 word by 8 bit

INTEL 2764A

Abstract: 2764a-2 i2764a 2764 memory chip 2764A2 2764A1 Z8051
Contextual Info: in t e i 2764A ADVANCED 64K 8Kx8 UV ERASABLE PROM - 200 nsec StandardAccess Time — HMOS H*-E Technology ' • Low Power - 6 0 mA Maximum Active " intel‘9ent Identifier Mode — Automated Programming Operations — 20 mA Maximum Standby in d ig e n t Programming™ Algorithm

w16 90

Abstract: 27C64 CY7C266 R1250 27C64 8k EPROM MS-020
Contextual Info: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM

27C64

Abstract: CY7C266 R1250 8kx8 eprom pin diagram
Contextual Info: 1CY7C266 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM

74S471

Abstract: mmi 6331 74S287 MMI 6330 74s188 programming AMD 27S21 MMI 6309 6306 MMI 74S188 74S288 PROGRAMMING
Contextual Info: V1.6 Jan 13,1999 Fujitsu -7051 7052 7053 7057 7111 32x8 7112 32x8 7113 256x4 7114 256x4 7115 512x4 7116 512x4 7117 256x8 7118 256x8 7121 1kx4 7122 1kx4 7123 512x8 7124 512x8 7126 7127 7128 2kx4 7131 7132 1kx8 7134 4kx4 7137 2kx8 7138 2kx8 7142 4kx8 7144 8kx8

32Kx16

Abstract: Intel EEPROM 32kx8
Contextual Info: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4

Contextual Info: GEC PLESSEY SEMICONDS 4bE D 37bfiSS5 Q Q l b 1^ GEC P L E S S E Y T «PLSB T - * /4 r 2 & - l2 L MARCH 1992 SEMICONDUCTORS PRELIMINARY INFORMATION DS3235 1.1 P11C68 INDUSTRIAL GRADE CMOS/SNOS nvSRAM HIGH PERFORMANCE 8Kx8 NON-VOLATILE STATIC RAM The P11C68 is a fast static RAM 35 and 45 ns , with a

Contextual Info: U631 H64 Software Controlled 8Kx8 nvSRAM □ Packages: P D IP 28 300 mil S O P28 (330 mil) Features □ H igh-perform ance C M O S non­ volatile static RAM 8192 x 8 bits □ 25, 35 and 45 ns Access Tim es □ 12, 20 and 25 ns O utput Enable A ccess T im es

Contextual Info: _ CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • C M O S fo r o p tim u m sp ee d /p o w e r T he C Y 7C 266 is a hig h -p e rfo rm a n ce 8192 w o rd by 8 bit C M O S PRO M . W hen de selected , th e C Y 7C 266 a u to m a tica lly